SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 463 A Tc = 80 C 356 A 300 A ICnom ICRM SEMiX(R) 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 356 A Tc = 80 C 266 A 300 A VGES tpsc VCC = 800 V VGE 20 V VCES 1200 V Tj = 150 C Tj Inverse diode IF SEMiX302GAR12E4s Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 IFRM IFRM = 3xIFnom 900 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1620 A -40 ... 175 C Tc = 25 C 356 A Tc = 80 C 266 A 300 A Tj Freewheeling diode IF Tj = 175 C IFnom Typical Applications* IFRM IFRM = 3xIFnom 900 A * AC inverter drives * UPS * Electronic Welding IFSM tp = 10 ms, sin 180, Tj = 25 C 1620 A -40 ... 175 C Tj Module Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.2 2.4 V VCE0 Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V rCE Tj = 25 C 3.3 3.8 m IGBT VCE(sat) IC = 300 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 C VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 C 5 5.0 5.3 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 C mA f = 1 MHz 18.6 nF f = 1 MHz 1.16 nF f = 1 MHz 1.02 nF QG VGE = - 8 V...+ 15 V 1700 nC RGint Tj = 25 C 2.50 GAR (c) by SEMIKRON Rev. 0 - 05.05.2010 http://store.iiic.cc/ 1 SEMiX302GAR12E4s Characteristics Symbol Conditions td(on) VCC = 600 V IC = 300 A tr Eon Trench IGBT Modules SEMiX302GAR12E4s IRRM Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Qrr Err Rth(j-c) 30 mJ 564 ns 117 ns 44 mJ rF IRRM Qrr Err Rth(j-c) ns 0.096 K/W Tj = 25 C 2.1 2.46 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 2.2 2.8 3.2 m 3.3 3.9 4.3 m Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 ns Tj = 150 C per IGBT rF Unit 60 Rth(j-c) Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 max. Tj = 150 C Eoff tf typ. 282 RG on = 1.9 Tj = 150 C RG off = 1.9 di/dton = 5000 A/s Tj = 150 C di/dtoff = 2800 A/s Tj = 150 C td(off) SEMiX(R) 2s min. Tj = 150 C 230 A 50 C 19 mJ 0.17 K/W Tj = 25 C 2.1 2.5 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 2.2 2.8 3.2 m 3.9 4.3 m Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 3.3 230 A 50 C 19 mJ 0.17 K/W Module LCE RCC'+EE' 18 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 C 0.7 m TC = 125 C 1 m 0.045 to terminals (M6) Mt nH K/W 3 5 Nm 2.5 5 Nm Nm w 250 g Temperatur Sensor R100 Tc=100C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K GAR 2 Rev. 0 - 05.05.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX302GAR12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 05.05.2010 http://store.iiic.cc/ 3 SEMiX302GAR12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 05.05.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX302GAR12E4s SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 05.05.2010 http://store.iiic.cc/ 5