MMBD7000
Vishay Semiconductors
for merly General Semiconductor
Document Number 88220 www.vishay.com
14-May-02 1
New Product
Dual Small-Signal Switching Diode
Maximum Ratings and Thermal Characteristics TA= 25°C unless otherwise noted
Parameter Symbol Value Unit
Re v erse Voltage VR100 V
Forward Current (continuous) IF200 mA
Non-Repetitive Peak Forward Current at t = 1s IFSM 500 mA
Power Dissipation on FR-5 Board TA= 25°CPtot 225 mW
Derate above 25°C 1.8 mW/°C
Total Device Dissipation on Alumina Substrate, TA= 25°C Ptot 300 mW
Derate above 25°C 2.4 mW/°C
Typical Thermal Resistance RΘJA 417(1) °C/W
Junction to Ambient Air 556(2)
Maximum Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Note:
(1) Device on Alumina Substrate
(2) On FR-5 Board
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode, especially suited for
automatic inser tion
Mechanical Data
Case: SOT-23 (TO-236AB) Plastic Package
Weight: approx. 0.008g
Marking Code: M5C
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
Dimensions in inches and (millimeters)
Mounting Pad Layout
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
T
Top View
TO-236AB (SOT-23)
MMBD7000
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88220
214-May-02
Electrical Characteristics TJ= 25°C unless otherwise noted
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage VBR IR= 100µA 100 ——V
VR = 50V ——1.0
Leakage Current IRVR = 100V ——3.0 µA
VR = 50V, Tj= 125°C ——100
IF = 1mA 0.55 —0.70
F orward Voltage VFIF= 10mA 0.67 —0.82 V
IF= 100mA 0.75 —1.10
Capacitance Ctot VR= 0, f = 1MHz ——1.5 pF
Reverse Recover y Time trr IF= 10mA to IR= 10mA ——4.0 ns
Irr = 1mA, RL= 100Ω
(1)Device on fiberglass substrate, see layout
