5STP 17T2200 5STP 17T2200 Old part no. TV 918C-1670-22 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM, V RRM = 2 200 I TAVm = 1 743 I TSM = 25 500 V TO = 0.992 r T = 0.206 V A A V m Types VRRM, VDRM 5STP 17T2200 5STP 17T2000 2 200 V 2 000 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 18 mm Da Air strike distance 9 mm 22 2 kN 0.40 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TV/110/04 Jul-10 1 of 5 5STP 17T2200 Maximum Ratings VRRM VDRM ITRMS Repetitive peak reverse and off-state voltage Maximum Limits Unit 2 200 2 000 V 2 738 A 1 743 A tp = 10 ms tp = 8.3 ms 25 500 27 200 A tp = 10 ms tp = 8.3 ms 3 251 250 3 070 000 A2s 200 A/s 1 000 V/s 5STP 17T2200 5STP 17T2000 Tj = -40 / 125 C RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/110/04 Jul-10 2 of 5 5STP 17T2200 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.430 V ITM = 2 000 A VT0 Threshold voltage 0.992 V rT Slope resistance 0.206 m 80 mA 80 mA 2 s IT1 = 2 113 A, IT2 = 5 655 A IDM Peak off-state current VD = VDRM IRM Peak reverse current VR = VRRM tgd Delay time Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq Turn-off time 200 s 2 600 C IT = 2 000 A, diT/dt = 12.5 A/s, VD = 2/3 VDRM, dvD/dt = 50 V/s Qrr Recovery charge the same conditions as at tq IH Holding current Tj = 25 C Tj = 125 C 170 90 mA IL Latching current Tj = 25 C Tj = 125 C 450 350 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 500 250 150 Unless otherwise specified Tj = 125 C Thermal Parameters Rthjc Thermal resistance junction to case Value Unit 15.5 K/kW double side cooling Rthch anode side cooling 25.0 cathode side cooling 45.0 Thermal resistance case to heatsink 4.0 K/kW double side cooling single side cooling 8.0 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/110/04 Jul-10 3 of 5 5STP 17T2200 Transient Thermal Impedance i ( s ) 4 Z thjc = Transient therm al im pedance junction to case Zthjc ( K/kW ) i =1 Conditions: Fm = 22 2 kN, Double side cooled Correction for periodic waveforms add 1.3 K/kW 180 rectangular: add 1.8 K/kW 120 rectangular: add 3.0 K/kW 60 rectangular: add 5.1 K/kW 2 0.41773 0.07323 Ri( K/kW ) R i (1 - exp( -t / i )) 180 sine: 1 i Analytical function for transient thermal impedance 9.311 3 4 0.00752 0.00214 1.014 0.675 4.504 18 16 14 12 10 8 6 4 2 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) IT ( A ) ITSM ( kA ) 25C 125C 10000 9000 8000 40 5 I TSM 2 i dt 35 4,5 7000 30 4 25 3,5 20 3 15 2,5 6000 5000 4000 3000 2000 1000 0 0 1 2 3 4 VT ( V ) Fig. 3 Maximum on-state characteristics 10 1 10 t ( ms ) 2 100 Fig. 4 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/110/04 Jul-10 4 of 5 i 2dt (106 A2s) Fig. 2 Dependence transient thermal impedance junction to case on square pulse 3500 3500 = 30 60 90 120 180 DC 3000 PT ( W ) PT ( W ) 5STP 17T2200 = 30 60 90 120 180 270 3000 DC 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 400 800 1200 1600 2000 0 400 800 1200 1600 I TAV ( A ) 130 Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f TC ( C ) TC ( C ) Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 120 130 120 110 110 100 100 90 90 80 2000 I TAV ( A ) 80 DC DC 70 270 70 60 60 0 400 800 1200 1600 2000 0 400 800 1200 I TAV ( A ) Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 1600 2000 I TAV ( A ) Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/110/04 Jul-10 5 of 5