5STP 17T2200
TS - TV/110/04 Jul-10 1 of 5
5STP 17T2200
Old part no. TV 918C-1670-22
Phase Control Thyristor
Properties Key Parameters
§ High operational capability VDRM, VRRM
=
2 200 V
§ Possibility of serial and parallel connection ITAVm
=
1 743 A
Applications ITSM
=
25 500 A
§ Controlled rectifiers VTO
=
0.992 V
§ AC drives rT
=
0.206 mΩ
Types
VRRM, VDRM
5STP 17T2200
5STP 17T2000 2 200 V
2 000 V
Conditions:
Tj = -40 ÷ 125 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mounting force
22 ± 2
kN
m Weight 0.40
kg
DS Surface
creepage
distance
18
mm
Da Air strike
distance 9
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STP 17T2200
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/110/04 Jul-10 2 of 5
Maximum Ratings Maximum Limits Unit
VRRM
VDRM
Repetitive peak reverse
and off-state voltage
Tj = -40 ÷ 125 °C
5STP 17T2200
5STP 17T2000 2 200
2 000 V
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 2 738 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 743
A
ITSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 25 500
27 200 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 3 251 250
3 070 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = ITAVm, half sine waveform, f = 50 Hz,
VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A
200 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 2/3 VDRM 1 000 V/µs
PGAVm Maximum average gate power losses 3 W
IFGM Peak gate current 10 A
VFGM Peak gate voltage 12 V
VRGM Reverse peak gate voltage 10 V
Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 125 °C
Unless otherwise specified Tj = 125 °C
5STP 17T2200
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/110/04 Jul-10 3 of 5
Characteristics Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
ITM = 2 000 A 1.430
V
VT0 Threshold voltage 0.992
V
rT Slope resistance
IT1 = 2 113 A, IT2 = 5 655 A 0.206
mΩ
IDM Peak off-state current
VD = VDRM 80 mA
IRM Peak reverse current
VR = VRRM 80 mA
tgd Delay time
Tj = 25 °C, VD = 0.4 VDRM, ITM = ITAVm,
tr = 0.3 µs, IGT = 2 A
2 µs
tq Turn-off time
IT = 2 000 A, diT/dt = 12.5 A/µs,
VD = 2/3 VDRM, dvD/dt = 50 V/µs
200 µs
Qrr Recovery charge
the same conditions as at tq 2 600
µC
IH Holding current Tj = 25 °C
Tj = 125 °C 170
90 mA
IL Latching current Tj = 25 °C
Tj = 125 °C 450
350 mA
VGT Gate trigger voltage
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
0.25
4
3
2
V
IGT
Gate trigger current
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
10
500
250
150
mA
Unless otherwise specified Tj = 125 °C
Thermal Parameters Value Unit
Rthjc Thermal resistance junction to case
double side cooling 15.5 K/kW
anode side cooling 25.0
cathode side cooling 45.0
Rthch Thermal resistance case to heatsink
double side cooling 4.0 K/kW
single side cooling 8.0
5STP 17T2200
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/110/04 Jul-10 4 of 5
Transient Thermal Impedance
i 1 2 3 4
τi ( s ) 0.41773
0.07323 0.00752 0.00214
Ri( K/kW )
9.311 4.504 1.014 0.675
0
2
4
6
8
10
12
14
16
18
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance junction
to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180°
sine: add 1.3 K/kW
180°
rectangular:
add 1.8 K/kW
120°
rectangular:
add 3.0 K/kW
60°
rectangular:
add 5.1 K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 1 2 3 4
VT ( V )
IT ( A )
25°C
125°C
10
15
20
25
30
35
40
110 100
t ( ms )
ITSM ( kA )
2
2,5
3
3,5
4
4,5
5
i2dt (106 A2s)
I
TSM
∫i2dt
Fig. 3
Maximum on-state characteristics Fig. 4
Surge on-state current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
5STP 17T2200
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/110/04 Jul-10 5 of 5
0
500
1000
1500
2000
2500
3000
3500
0400 800 1200 1600 2000
ITAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
DC
0
500
1000
1500
2000
2500
3000
3500
0400 800 1200 1600 2000
ITAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 5
On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 6
On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
0400 800 1200 1600 2000
ITAV ( A )
TC ( °C )
DC
60
70
80
90
100
110
120
130
0400 800 1200 1600 2000
ITAV ( A )
TC ( °C )
DC
270°
Fig. 7
Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 8
Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
Notes:
