MMBTA42 / MMBTA43 MMBTA42 / MMBTA43 Surface mount High Voltage Transistors Hochspannungs-Transistoren fur die Oberflachenmontage NPN NPN Version 2005-06-21 1.1 2.9 0.1 0.4 0.1 Type Code 1.3 2.5 max 3 2 1 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Power dissipation Verlustleistung 250 mW Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBTA42 MMBTA43 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 300 V 200 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 300 V 200 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 500 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -65...+150C -65...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 160 V MMBTA42 MMBTA43 ICB0 ICB0 - - - - 100 nA 100 nA MMBTA42 MMBTA43 IEB0 IEB0 - - - - 100 nA 100 nA VCEsat - - 500 mV VBEsat - - 900 mV Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 6 V IC = 0, VEB = 4 V Collector saturation voltage - Kollektor-Sattigungsspannung 2) IC = 20 mA, IB = 2 mA Base saturation voltage - Basis-Sattigungsspannung 2) IC = 20 mA, IB = 2 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBTA42 / MMBTA43 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE 25 40 40 - - - - - - fT 50 MHz - - CCB0 CCB0 - - - - 3 pF 4 pF DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base capacitance - Kollektor-Basis-Kapazitat VCB = 20 V, IE =ie = 0, f = 1 MHz MMBTA42 MMBTA43 Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MMBTA92, MMBTA93 Marking - Stempelung MMBTA42 = 1D MMBTA43 = 1E 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG