MMBTA42 / MMBTA43
MMBTA42 / MMBTA43
NPN Surface m oun t Hig h Vol t age Tr an sisto rs
Hochspannungs-Transistoren für die Oberflächenmontage NPN
Version 2005-06-21
Dimensions / Maße [mm]
1 = B 2 = E 3 = C
Power dissipation
Verlustleistung
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBTA42 MMBTA43
Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 300 V 200 V
Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 300 V 200 V
Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC500 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-65...+150°C
-65…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 160 V
MMBTA42
MMBTA43
ICB0
ICB0
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 6 V
IC = 0, VEB = 4 V
MMBTA42
MMBTA43
IEB0
IEB0
–
–
–
–
100 nA
100 nA
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 20 mA, IB = 2 mA VCEsat – – 500 mV
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 20 mA, IB = 2 mA VBEsat – – 900 mV
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
MMBTA42 / MMBTA43
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
hFE
hFE
hFE
25
40
40
–
–
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 20 mA, f = 100 MHz fT50 MHz – –
Collector-Base capacitance – Kollektor-Basis-Kapazität
VCB = 20 V, IE =ie = 0, f = 1 MHz MMBTA42
MMBTA43
CCB0
CCB0
–
–
–
–
3 pF
4 pF
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren MMBTA92, MMBTA93
Marking - Stempelung MMBTA42 = 1D
MMBTA43 = 1E
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
