Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
75 100
115 150
RθJL 48 60
Drain-Source Voltage 55 V
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Maximum Units
Gate-Source Voltage ±12 V
A
TA=70°C 1.7
Pulsed Drain Current B10
Continuous Drain
Current A
TA=25°C
W
Power Dissipation
TA=25°C PD
1.25
ID
2.1
TA=70°C 0.8
Steady-State °C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Maximum Junction-to-Lead CSteady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient
A
AO3422
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
RDS(ON) < 200mΩ (VGS = 2.5V)
General Description
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to
12V. This device is suitable for use as a load switch.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Alpha & Omega Semiconductor, Ltd.
AO3422
Symbol Min Typ Max Units
BVDSS 55 V
1
TJ=55°C 5
IGSS ±100 nA
VGS(th) 0.6 1.3 2 V
ID(ON) 10 A
125 160
TJ=125°C 175 210
157 200 m
Ω
gFS 11 S
VSD 0.78 1 V
IS1A
Ciss 214 300 pF
Coss 31 pF
Crss 12.6 pF
Rg1.3 3 Ω
Qg2.6 3.3 nC
Qgs 0.6 nC
Qgd 0.8 nC
tD(on) 2.3 ns
tr2.4 ns
tD(off) 16.5 ns
tf2ns
trr 20 30 ns
Qrr 17 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=2.1A, dI/dt=100A/µs
IF=2.1A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=10mA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=44V, VGS=0V µA
Gate-Source leakage current VDS=0V, VGS=±12V
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=4.5V, VDS=5V
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=2.1A mΩ
VGS=2.5V, ID=1.5A
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance VDS=5V, ID=2.1A
Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=27.5V, ID=2.1A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=27.5V, RL=12Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Sep 2010
Alpha & Omega Semiconductor, Ltd.
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
012345
VDS (Volts)
Fig 1: On-Region characteristics
ID (A)
VGS=2V
2.5V
5V
3.5V10V
0
2
4
6
8
1 1.25 1.5 1.75 2 2.25 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
100
120
140
160
180
200
012345
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=2.5V
VGS=4.5
10
60
110
160
210
260
310
360
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
ID=2.3A
25°C
125°C
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
0123
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
40
80
120
160
200
240
280
320
360
400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms 1ms
0.1s
1
s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=27.5V
ID=2.1A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
AO3422
c
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Tes t Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/ 2 L I
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
trr
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Char ge
Gate Charge Test Circuit & Wave form
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
tt
r
d(on)
t
on
t
d(of f)
t
f
t
of f
Alpha & Omega Semiconductor, Ltd.
