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SOD-323
Absolute Maximum Ratings (TA=25°C unless otherwise noted）
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Features
Schottky Barrier Diode
Reverse Voltage 70V Forward Current 70mA
GSBAS70WS
Low Turn-on Voltage
Fast Swtiching
PN Junction Guard for Transient and ESD Protection
Designed for Surface Mount Application
Plastic Material –UL Recognition Flammability
Classification 94V-O
Schematic Diagram
Parameter Symbol Value Unit
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
VRRM
VRWM
VR
70 V
Forward Continuous Current IF 70 mA
Non-repetitive Peak Forward Surge Current @
t=8.3ms IFSM
100 mA
Power Dissipation PD 200 mW
Thermal Resistance from Junction to Ambient RθJA 500 °C/W
Storage Temperature
Parameter Symbol Min Typ Max Unit
VF1 0.41 V
Forward Voltage
VF2
1 V
Reverse Current IR
100 nA
Capacitance between Terminals CT
2 pF
Re
verse Recovery Time trr 5 ns
TSTG -55 to +150 °C
Junction Temperature TJ 125
Electrical Characteristics (TA=25°C unless otherwise noted）
Test Conditions
IF=1mA
IF=15mA
VR=50V
VR=0V,f=1MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
-
-
-
-
-
-
-
-
-
-
+
-
°C
0 25 50 75 100 125
0
50
100
150
200
250
0.0 0.2 0.4 0.6 0.8 1.0
0.1
1
10
0 5 10 15 20 25 30 35 40
1E-3
0.01
0.1
1
10
100
0 5 10 15 20
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Forward C h aracteristics Rev erse Characteristics
Power D e rating Curve
POWER DISSIPATION PD (mW)
AMBIENT TEMPERATURE Ta ( )
℃
0.3
20
3
T
a
=100
℃
Ta=25℃
FORWARD CURRENT IF (mA)
FORWARD VOLTAGE VF (V)
Pulsed Pulsed
Ta=100℃
Ta=25℃
REVERSE CURRENT IR (uA)
REVERSE VOLTAGE VR (V)
Ta=25℃
f=1MHz
Capacitance C h aracteristics
REVERSE VOLTAGE VR (V)
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Typical Characteristics Curves
Schottky Barrier Diode
Reverse Voltage 70V Forward Current 70mA
GSBAS70WS
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Schottky Barrier Diode
Reverse Voltage 70V Forward Current 70mA
GSBAS70WS
Package Outline Dimensions SOD-323
Suggested Pad Layout
Device Package Quantity HSF Status
GSBAS70WS SOD-323 K73 3000pcs / Reel RoHS Compliant
Marking and Ordering Information
Marking
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www.goodarksemi.com Doc.USGSBAS70WSxSC3.0
