BAT54HT/R - NXP Semiconductors / Philips Semiconductors

1. Product profile

1.1 General description

Planar Schottky barrier single diode with an integrated guard r ing for stress protection,

encapsulated in a SOD123F small and flat lead SMD plastic package.

1.2 Features

Low forward voltage

Small and flat lead SMD plastic package

Low capacitance

Flat leads: excellent coplanarity and improved thermal behavior

1.3 Applications

Ultra high-speed switching

Voltage clamping

Line termination

Inverse-po lar ity pr ot ec tio n

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

2. Pinning information

[1] The marking bar indicates the cathode.

BAT54H

Schottky barrier single diode in small SOD123F package

Rev. 02 — 13 January 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current - - 200 mA

VRreverse voltage - - 30 V

VFforward voltage IF=10mA [1] --400mV

Table 2. Pinning

Pin Description Simplified outline Symbol

1 cathode [1]

2 anode 21

sym00

Product data sheet Rev. 02 — 13 January 2010 2 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

3. Ordering information

4. Marking

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Soldering point of cathode tab.

Table 3. Ordering information

Type number Package

Name Description Version

BAT5 4H - plastic surface mounted package; 2 leads SOD123F

Table 4. Marking codes

Type number Marking code

BAT54H AG

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage - 30 V

IFforward current - 200 mA

IFRM repetitive peak forward

current tp≤1s; δ≤0.5 - 300 mA

IFSM non-repetitive peak forward

current tp≤10 ms - 600 mA

Ptot total power dissipation Tamb ≤25 °C[1] -375mW

Tjjunction temperature - 125 °C

Tamb ambient temperature −65 +125 °C

Tstg storage temperature −65 +150 °C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction to

ambient in free air [1][2] - - 330 K/W

Rth(j-sp) thermal resistance from junction to

solder point [3] --70K/W

Product data sheet Rev. 02 — 13 January 2010 3 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tamb = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF=0.1mA [1] --240mV

IF=1mA [1] --320mV

IF=10mA [1] --400mV

IF=30mA [1] --500mV

IF= 100 mA [1] --800mV

IRreverse current VR=25V - - 2 μA

Cddiode capacitance VR= 1 V; f = 1 MHz - - 10 pF

Product data sheet Rev. 02 — 13 January 2010 4 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

(1) Tamb = 125 °C

(2) Tamb =85°C

(3) Tamb =25°C

(1) Tamb = 125 °C

(2) Tamb =85°C

(3) Tamb =25°C

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Reverse current as a function o f reverse

voltage; typical values

Tamb =25°C; f = 1 MHz

Fig 3. Diod e capacitance as a function of reverse voltage; typical values

103

102

10−1

(mA)

VF (V)

1.20.80.40

msa892

(3)(2)(1)

0102030

VR (V)

103

102

10−1

(μA)

(1)

(2)

(3)

msa893

0102030

(V)

(pF)

msa891

Product data sheet Rev. 02 — 13 January 2010 5 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

10. Soldering

Fig 4. Package outline SOD123F

04-11-29Dimensions in mm

1.2

1.0

0.25

0.10

3.6

3.4

2.7

2.5

0.55

0.35

0.70

0.55

1.7

1.5

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quan tity

3000 10000

BAT54H SOD123F 4 mm pitch, 8 mm tape and reel -115 -135

Reflow soldering is the only recommended soldering method.

Dimensions in mm

Fig 5. Reflow soldering footprint SOD123F

1.6

2.9

4.4

1.1 1.22.1

1.1

(2×)

solder lands

solder resist

occupied area

solder paste

Product data sheet Rev. 02 — 13 January 2010 6 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAT54H_2 20100113 Product data sheet - BAT54H_1

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

BAT54H_1 20050407 Product data sheet - -

Product data sheet Rev. 02 — 13 January 2010 7 of 8

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

12.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability .

Terms and conditions of sale — NXP Semiconductors product s are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to war ranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BAT54H

Schottky barrier single diode in SOD123F package

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 January 2010

Document identifier: BAT54 H _2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Packing information . . . . . . . . . . . . . . . . . . . . . 5

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 7

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8