Data Sheet, Doc. No. 5SYA 1418-02 06-2012 5SNA 1000N330300 HiPak IGBT Module VCE = 3300 V IC = 1000 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Collector-emitter voltage Symbol Conditions VCES VGE = 0 V, Tvj min 25 C max Unit 3300 V DC collector current IC TC = 100 C, Tvj = 150 C 1000 A Peak collector current ICM tp = 1 ms 2000 A Gate-emitter voltage VGES Total power dissipation Ptot DC forward current 20 V TC = 25 C, Tvj = 150 C -20 9800 W 1000 A Peak forward current IFRM tp = 1 ms 2000 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 9000 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature IF VCC = 2500 V, VCEM CHIP VGE 15 V, Tvj 3300 V 150 C 1 min, f = 50 Hz 6000 V 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C 4 6 Ms Mounting torques 2) 1) 2) Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Collector cut-off current Gate leakage current Gate-emitter threshold voltage Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 3300 VCE sat IC = 1000 A, VGE = 15 V ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 3) 4) td(on) tr td(off) tf Eon Eoff ISC Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 VCE = 3300 V, VGE = 0 V VCE = 0 V, VGE = 2.9 V 3.1 3.4 V Tvj = 150 C 3.25 Tvj = 25 C 0.04 0.67 mA Tvj = 125 C 13.5 27 Tvj = 150 C 67 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 1000 A, RG = 2.2 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load tpsc 10 s, VGE = 15 V, VCC = 2500 V, VCEM CHIP 3300 V V 2.5 IC = 1000 A, VCE = 1800 V, VGE = -15 V ..15 V VCC = 1800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load Unit Tvj = 125 C 20 V, Tvj = 125 C VCC = 1800 V, IC = 1000 A, RG = 2.2 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load max Tvj = 25 C IC = 160 mA, VCE = VGE, Tvj = 25 C VCC = 1800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load typ V mA mA -500 500 nA 5 7 V 7.33 C 101 nF 8.4 nF 2.57 nF Tvj =25 C 560 ns Tvj =125 C 530 ns Tvj =150 C 530 ns Tvj =25 C 240 ns Tvj =125 C 255 ns Tvj =150 C 260 ns Tvj =25 C 1465 ns Tvj =125 C 1640 ns Tvj =150 C 1700 ns Tvj =25 C 315 ns Tvj =125 C 385 ns Tvj =150 C 400 ns Tvj =25 C 1250 mJ Tvj =125 C 1640 mJ Tvj =150 C 1800 mJ Tvj =25 C 1240 mJ Tvj =125 C 1730 mJ Tvj =150 C 1870 mJ Tvj =150 C 4270 A Diode characteristic values 5) Parameter Symbol Conditions min Tvj =25 C Forward voltage 6) VF Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) IF = 1000 A VCC = 1800 V, IF = 1000 A, VGE = 15 V, RG = 1.5 , CGE = 220 nF, di/dt = 4 kA/s L = 100 nH, inductive load Erec typ max Unit 2.05 2.5 V 2.6 Tvj =125 C 2.25 Tvj =150 C 2.20 V V Tvj =25 C 1010 A Tvj =125 C 1180 A Tvj =150 C 1230 A Tvj =25 C 630 C Tvj =125 C 1020 C Tvj =150 C 1180 C Tvj =25 C 1125 ns Tvj =125 C 1440 ns Tvj =150 C 1630 ns Tvj =25 C 700 mJ Tvj =125 C 1210 mJ Tvj =150 C 1420 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance Conditions min max Unit Rth(j-c)IGBT 0.013 K/W Rth(j-c)DIODE 0.025 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.012 K/W 0.024 K/W 12 nH 2) Comparative tracking index CTI Module stray inductance L grease = 1W/m x K 400 CE TC =25 C Resistance, terminal-chip 2) typ RCC'+EE' 0.083 TC =125 C 0.113 TC =150 C 0.120 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 min typ 130 x 140 x 38 according to IEC 60664-1 Term. to base: 19 and EN 50124-1 Term. to term: 19 according to IEC 60664-1 and EN 50124-1 Term. to base: 32 Term. to term: 32 max Unit mm mm mm 920 g Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 2000 2000 VCE = VGE 25 C 1500 125 C IC [A] IC [A] 1500 1000 150 C 1000 125 C 500 500 150 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 8 VCE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 2000 10 11 12 13 Typical transfer characteristics, chip level 2000 19 V 19 V 17 V 1500 17 V 1500 15 V 15 V 13 V 13 V IC [A] IC [A] 9 VGE [V] 1000 1000 11 V 11 V 500 9V 500 9V Tvj = 150 C Tvj = 25 C 0 0 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 1 2 3 4 VCE [V] Fig. 4 Typical output characteristics, chip level 5 6 5 9 VCC = 1800 V VGE = 15 V RGon = 1.5 ohm RGoff = 2.2 ohm CGE = 220 nF L = 100 nH Eon 7 6 3 Eoff Eon, Eoff [J] Eon, Eoff [J] 4 VCC = 1800 V IC = 1000 A VGE = 15 V CGE = 220 nF L = 100 nH 8 5 Eon 4 2 3 Eoff 2 1 1 Tvj = 125 C Tvj = 150 C 0 Tvj = 125 C Tvj = 150 C 0 0 500 1000 1500 2000 0 5 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 VCC = 1800 V IC = 1000 A VGE = 15 V CGE = 220 nF L = 100 nH td(off) td(off) t d(on) tf 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 15 RG [ohm] 10 td(on) 0.1 tr 1 VCC = 1800 V VGE = 15 V RGon = 1.5 ohm RGoff = 2.2 ohm CGE = 220 nF L = 100 nH tr tf 0.01 0.1 0 500 1000 1500 0 2000 Typical switching times vs collector current 6 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 5 10 RG [ohm] IC [A] Fig. 7 10 Fig. 8 Typical switching times vs gate resistor 15 20 1000 VGE = 0 V f OSC = 1 MHz VOSC = 50 mV VCC = 1800 V 15 Cies 100 C [nF] VGE [V] VCC = 2500 V 10 Coes 10 5 Cres IC = 1000 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 Vce [V] 25 30 Fig. 10 2.5 VCC 2500 V, Tvj = 150 C VGE = 15 V, RG = 2.2 Ohm, CGE = 220 nF 2.0 ICpulse / IC 1.5 1.0 0.5 chip module 0.0 500 1000 1500 2000 2500 VCE [V] Fig. 11 2 4 Qg [C] Typical capacitances vs collector-emitter voltage 0 0 35 Turn-off safe operating area (RBSOA) 7 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 3000 3500 Typical gate charge characteristics 6 2000 1750 3000 Tvj = 125 C Tvj = 150 C Tvj = 125 C Tvj = 150 C VCC = 1800 V VGE = 15 V RGon = 1.5 ohm CGE = 220 nF L = 100 nH 1000 1500 Erec 250 Irr RG = 1.2 Ohm RG = 1.5 Ohm RG = 1.8 Ohm RG = 10 Ohm 0 2000 1 2 3 4 5 di/dt [kA/s] IF [A] Fig. 12 VCC = 1800 V IF = 1000 A CGE = 220 nF L = 100 nH 0 0 500 500 750 0 0 750 RG = 4.7 Ohm 500 Qrr RG = 2.2 Ohm Qrr 1000 RG = 2.7 Ohm 1500 1250 RG = 3.3 Ohm 1000 RG = 15 Ohm Irr Erec [mJ], Irr [A], Qrr [C] 2250 Qrr [C] Erec [mJ], Irr [A] 1500 RG = 6.8 Ohm 1500 Erec Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 2000 VCC 2500 V di/dt 5.3 kA/s Tvj = 150 C L = 100 nH 2000 1500 25 C IR [A] IF [A] 1500 1000 125 C 1000 150 C 500 500 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 14 Typicial diode forward characteristics chip level 8 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 500 1000 1500 2000 2500 VR [V] Fig. 15 Safe operating area diode (SOA) 3000 3500 0.1 Analytical function for transient thermal impedance: n Zth(j-c) [K/W] IGBT, DIODE Zth(j-c) Diode 0.01 R i (1 - e -t/ i ) Z th (j-c) (t) = Zth(j-c) IGBT IGBT i 1 i 1 2 3 4 Ri(K/kW) 8.78 2.06 0.961 0.948 i(ms) 207.4 30.1 7.55 1.57 Ri(K/kW) 17.1 4.28 1.92 1.92 i(ms) 203.6 30.1 7.53 1.57 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNA 1000N330300 | Doc. No. 5SYA 1418-02 06-2012 DIODE 0.001