HITFET=II.Generation BTS 118 D Smart Lowside Power Switch Features Product Summary * Logic Level Input Drain source voltage VDS 42 V * Input Protection (ESD) On-state resistance RDS(on) 100 m * Thermal shutdown with Nominal load current ID(ISO) 2.4 A Clamping energy EAS 2 J auto restart * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Analog driving possible Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. V bb M Drain HITFET Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Page 1 2000-05-19 BTS 118 D Maximum Ratings at T j = 25C, unless otherwise specified Parameter Symbol Drain source voltage VDS 42 VDS(SC) 42 Drain source voltage for short circuit protection Continuous input current 1) Value V mA IIN -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V | IIN | 2 Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot C W T C = 85 C 21 6cm2 1.1 cooling area , T A = 85 C Unit Unclamped single pulse inductive energy 2) EAS 2 J Load dump protection VLoadDump3) = V A + VS VLD 58 V 2 kV VIN = 0 and 10 V, t d = 400 ms, RI = 2 , RL = 6 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC SMD: junction - ambient RthJA 3 @ min. footprint 115 @ 6 cm2 cooling area 4) 55 K/W 1Device switched on into existing short circuit ( see diagram Determination of I D(lim) ). 2 Not tested, specified by design. 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 2000-05-19 BTS 118 D Electrical Characteristics Parameter Symbol at Tj = 25C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 A Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150C IDSS VDS = 32 V, VIN = 0 V Input threshold voltage V VIN(th) ID = 0.3 mA, Tj = 25 C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 C 0.9 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) m VIN = 5 V, ID = 2.2 A, Tj = 25 C - 90 120 VIN = 5 V, ID = 2.2 A, Tj = 150 C - 160 240 VIN = 10 V, ID = 2.2 A, Tj = 25 C - 70 100 VIN = 10 V, ID = 2.2 A, Tj = 150 C - 130 200 On-state resistance A RDS(on) Nominal load current A ID(ISO) VIN = 10 V, Tj < 150C, TA = 85 C, SMD 1) 2.4 - - VIN = 10 V, VDS = 0.5 V, TC = 85 C, Tj < 150C 3.5 - - 10 15 20 Current limit (active if VDS>2.5 V)2) ID(lim) VIN = 10 V, VDS = 12 V, tm = 200 s 1@ 6 cm 2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. Page 3 2000-05-19 BTS 118 D Electrical Characteristics Symbol Parameter Values Unit min. typ. max. t on - 40 100 t off - 70 100 70 to 50% Vbb: RL = 4.7 , V IN = 0 to 10 V, V bb = 12 V -dV DS/dton - 0.4 1 Slew rate off dVDS/dt off - 0.6 1 at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID: s RL = 4.7 , V IN = 0 to 10 V, V bb = 12 V Turn-off time V IN to 10% ID: RL = 4.7 , V IN = 10 to 0 V, V bb = 12 V Slew rate on 50 to 70% Vbb: V/s RL = 4.7 , V IN = 10 to 0 V, V bb = 12 V Protection Functions Thermal overload trip temperature Tjt 150 175 - C Thermal hysteresis Tjt - 10 - K Input current protection mode IIN(Prot) 60 120 300 A Input current protection mode IIN(Prot) - 100 300 EAS 2 - - J VSD - 1.0 - V Tj = 150 C Unclamped single pulse inductive energy 1) ID = 2.2 A, Tj = 25 C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 10.9 A, tm = 250 s, VIN = 0 V, tP = 300 s 1 Not tested, specified by design. Page 4 2000-05-19 BTS 118 D Block diagram Inductive and overvoltage output clamp Terms RL D V Z IIN 1 D IN 2 ID VDS Vbb HITFET VIN S S 3 HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input Source/ Ground Page 5 2000-05-19 BTS 118 D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. RON = f(Tj); I D=2.2A; V IN=10V Ptot = f(TA) @ RthJA=55 K/W 3.0 225 m Rthjc = 3 K/W max. 175 RDS(on) Ptot W 2.0 SMD @ 6cm2 150 typ. 125 1.5 100 1.0 75 50 0.5 25 0.0 -50 -25 0 25 50 75 100 C 0 -50 150 -25 0 25 50 75 100 125 C TA;TC Tj 3 On-state resistance 4 Typ. input threshold voltage RON = f(Tj); ID =2.2A; VIN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 2.0 max. m V 200 1.6 175 typ. 150 V GS(th) RDS(on) 175 1.4 1.2 125 1.0 100 0.8 75 0.6 50 0.4 25 0.2 0 -50 -25 0 25 50 75 100 125 C 0.0 -50 175 -25 0 25 50 75 100 C 150 Tj Tj Page 6 2000-05-19 BTS 118 D 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN ); VDS=12V; TJstart=25C I D(lim) = f(Tj); VDS=12V Parameter: VIN 16 24 A A 20 10 ID ID 12 18 8 16 6 14 4 12 2 0 1 Vin=10V 2 3 4 5 6 7 V 8 10 -50 10 5V -25 0 25 50 75 100 125 C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(VDS ); TJstart =25C IDSS = f(Tj ) Parameter: VIN 20 11 Vin=10V A A 7V 9 6V 14 5V 12 4V 8 I DSS ID 16 max. 7 6 10 5 8 4 6 3 3V 4 2 2 0 0 typ. 1 1 2 3 4 V 0 -50 6 VDS -25 0 25 50 75 100 125 C 175 Tj Page 7 2000-05-19 BTS 118 D 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Z thJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 10 2 25 K/W A -40C 10 1 D=0.5 0.2 ZthJA I D(lim) 0.1 25C 15 10 0 0.05 0.02 0.01 85C 10 -1 10 +150C 10 -2 5 Single pulse 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ms 10 -3 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 10 5.0 s 10 4 tp t 11 Determination of ID(lim) ID(lim) = f(t); tm = 200s Parameter: TJstart 25 I D(lim) A -40C 15 25C 85C 10 150C 5 0 0.0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2000-05-19 BTS 118 D Package Ordering Code Package Ordering Code P-TO252-3-1 Q67060-S6505-A3 P-TO251-3-1 On request 4.57 0.51 min C 3x 0.75 0.1 0...0.15 0.5 +0.08 -0.04 2.28 1 0.1 0.25 M A B 0.9 +0.08 -0.04 B 5.4 0.1 6.22 -0.2 1 0.1 0.9 +0.08 -0.04 B 5.4 0.1 2.3 +0.05 -0.10 A 0.8 0.15 9.9 0.5 6.22 -0.2 1 0.1 A 0.15 max per side 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.15 max per side 9.3 0.4 6.5 +0.15 -0.10 0.5 +0.08 -0.04 3 x 0.75 0.1 2.28 4.56 0.1 1.0 0.25 M A B C GPT09050 GPT09051 All metal surfaces tin plated, except area of cut. All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2000-05-19