2000-05-19
Page 1
HITFET
=
==
=II.Generation BTS 118 D
Smart Lowside Power Switch
Product Summary
Drain source voltage VDS 42 V
On-state resistance RDS(on) 100 mΩ
Nominal load current ID(ISO) 2.4 A
Clamping energy EAS 2 J
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with
auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching
or linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOStechnology. Fully protected by embedde
d
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
2000-05-19
Page 2
BTS 118 D
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage VDS 42 V
Drain source volta
g
e for short circuit
p
rotection1) VDS
(
SC
)
42
Continuous input current
-0.2V ≤ VIN ≤ 10V
VIN < -0.2V or VIN > 10V
IIN
no limit
| IIN | ≤ 2
mA
Operating temperature T
j
-40 ...+150 °C
Storage temperature Tst
g
-55 ... +150
Power dissipation
TC = 85 °C
6cm2 cooling area , TA = 85 °C
Ptot
21
1.1
W
Unclamped single pulse inductive energy 2) E
A
S2 J
Load dump protection VLoadDump3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 Ω,
RL = 6 Ω, VA = 13.5 V
VLD 58 V
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD 2 kV
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
Thermal resistance
junction - case: RthJC 3 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm2 cooling area 4)
RthJA
115
55
1Device switched on into existing short circuit ( see diagram Determination of I D(lim) ).
2 Not tested, specified by design.
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
2000-05-19
Page 3
BTS 118 D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
VDS(AZ) 42 - 55 V
Off-state drain current Tj = -40 ... +150°C
VDS = 32 V, VIN = 0 V
IDSS - 1.5 10 µA
Input threshold voltage
ID = 0.3 mA, Tj = 25 °C
ID = 0.3 mA, Tj = 150 °C
VIN(th)
1.3
0.9
1.7
-
2.2
-
V
On state input current IIN
(
on
)
- 10 30 µA
On-state resistance
VIN = 5 V, ID = 2.2 A, Tj = 25 °C
VIN = 5 V, ID = 2.2 A, Tj = 150 °C
RDS(on)
-
-
90
160
120
240
mΩ
On-state resistance
VIN = 10 V, ID = 2.2 A, Tj = 25 °C
VIN = 10 V, ID = 2.2 A, Tj = 150 °C
RDS(on)
-
-
70
130
100
200
Nominal load current
VIN = 10 V, Tj < 150°C, TA = 85 °C, SMD 1)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
ID(ISO)
2.4
3.5
-
-
-
-
A
Current limit (active if VDS>2.5 V)2)
VIN = 10 V, VDS = 12 V, tm = 200 µs
ID(lim) 10 15 20
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
2000-05-19
Page 4
BTS 118 D
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
ton - 40 100 µs
Turn-off time VIN to 10% ID:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
toff - 70 100
Slew rate on 70 to 50% Vbb:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
-dVDS/dton - 0.4 1 V/µs
Slew rate off 50 to 70% Vbb:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
dVDS/dtoff - 0.6 1
Protection Functions
Thermal overload trip temperature T
j
t150 175 - °C
Thermal hysteresis ∆T
j
t- 10 - K
Input current protection mode IIN
Prot
60 120 300 µA
Input current protection mode
Tj = 150 °C
IIN(Prot) - 100 300
Unclamped single pulse inductive energy 1)
ID = 2.2 A, Tj = 25 °C, Vbb = 12 V
EAS 2 - - J
Inverse Diode
Inverse diode forward voltage
IF = 10.9 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
VSD - 1.0 - V
1 Not tested, specified by design.
2000-05-19
Page 5
BTS 118 D
Block diagram
Inductive and overvoltage
output clamp
Terms
HI TFET
IN D
V
IN
IDV
DS
1
IIN
S
V
bb
R
L
2
3
HITFET
VZD
S
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Source/
Ground
Input
2000-05-19
Page 6
BTS 118 D
1 Maximum allowable power dissipation
Ptot = f(TC) resp.
Ptot = f(TA) @ RthJA=55 K/W
-50 -25 0 25 50 75 100 °C 150
TA;TC
0.0
0.5
1.0
1.5
2.0
W
3.0
P
tot
SMD @ 6cm2
Rthjc = 3 K/W
2 On-state resistance
RON = f(Tj); ID=2.2A; VIN=10V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
25
50
75
100
125
150
175
mΩ
225
RDS(on)
typ.
max.
3 On-state resistance
RON = f(Tj); ID=2.2A; VIN=5V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
25
50
75
100
125
150
175
200
mΩ
250
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V
-50 -25 0 25 50 75 100 °C 150
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
V
GS(th)
2000-05-19
Page 7
BTS 118 D
5 Typ. transfer characteristics
ID=f(VIN); VDS=12V; TJstart=25°C
12345678V10
VIN
0
2
4
6
8
10
12
A
16
ID
6 Typ. short circuit current
ID(lim) = f(Tj); VDS=12V
Parameter: VIN
-50 -25 0 25 50 75 100 125 °C 175
Tj
10
12
14
16
18
20
A
24
ID
5V
Vin=10V
7 Typ. output characteristics
ID=f(VDS); TJstart=25°C
Parameter: VIN
01234V6
VDS
0
2
4
6
8
10
12
14
16
A
20
I
D
3V
4V
5V
6V
7V
Vin=10V
8 Typ. off-state drain current
IDSS = f(Tj)
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
1
2
3
4
5
6
7
8
9
µA
11
IDSS
typ.
max.
2000-05-19
Page 8
BTS 118 D
9 Typ. overload current
ID(lim) = f(t), Vbb=12 V, no heatsink
Parameter: Tjstart
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ms 5.0
t
0
5
10
15
A
25
ID(lim)
-40°C
+150°C
85°C
25°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1
10 2 10 4
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
0.0 0.1 0.2 0.3 0.4 ms 0.6
t
0
5
10
15
A
25
ID(lim)
-40°C
25°C
85°C
150°C
2000-05-19
Page 9
BTS 118 D
Package Ordering Code
P-TO252-3-1 Q67060-S6505-A3
Package Ordering Code
P-TO251-3-1 On request
GPT09050
5.4
±0.1
-0.10
6.5
+0.15
A
6.22
-0.2
1
±0.1
0.15
±0.1
max
per side
3 x 0.75
2.28
4.56
+0.08
-0.04
0.9
2.3
-0.10
+0.05
B
+0.08
-0.04
0.5
B
A0.25
M
±0.4
9.3
C
1.0
C
All metal surfaces tin plated, except area of cut.
GPT09051
5.4
±0.1
-0.10
6.5
+0.15
A
±0.5
9.9
6.22
-0.2
1
±0.1
±0.15
0.8
0.15
±0.1
max
per side 0.75
2.28
4.57
+0.08
-0.04
0.9
2.3
-0.10
+0.05
B
min0.51
±0.1
1
+0.08
-0.04
0.5
0...0.15
B
A0.25
M
0.1
All metal surfaces tin plated, except area of cut.
3x
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.