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FGH30N60LSD 600 V, 30 A PT IGBT Features General Description * Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor. * High Input Impedance * Low Conduction Loss Applications * Solar Inverter, UPS C G G C TO-247 E E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage 20 V IC Collector Current @ TC = 25C 60 A Collector Current @ TC = 100C 30 A ICM (1) Pulsed Collector Current 90 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A 480 W PD Maximum Power Dissipation @ TC = 25C Maximum Power Dissipation @ TC = 100C 192 W TJ Operating Junction Temperature -55 to +150 C Tstg Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 C/W RJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 C/W RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 1 www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT November 2013 Part Number Top Mark FGH30N60LSDTU FGH30N60LSD Package Packing Method TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width Quantity N/A N/A 30 TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 -- -- V -- 0.6 -- V/C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA BVCES/ TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- 250 nA 4.0 5.5 7.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE IC = 30 A, VGE = 15 V -- 1.1 1.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 30 A, VGE = 15 V, TC = 125C -- 1.0 -- V IC = 60 A, VGE = 15 V -- 1.3 -- V -- 3550 -- pF VCE = 30 V, VGE = 0 V, f = 1 MHz -- 245 -- pF -- 90 -- pF 18 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- tr Rise Time -- 46 -- ns td(off) Turn-Off Delay Time -- 250 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff td(on) VCC = 400 V, IC = 30 A, RG = 6.8 , VGE = 15 V, Inductive Load, TC = 25C -- 1.3 2.0 us -- 1.1 -- mJ Turn-Off Switching Loss -- 21 -- mJ Turn-On Delay Time -- 17 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 270 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 VCC = 400 V, IC = 30 A, RG =6.8 , VGE = 15 V, Inductive Load, TC = 125C VCE = 600 V, IC = 30 A, VGE = 15 V Measured 5mm from PKG 2 -- 2.6 -- us -- 1.1 -- mJ -- 36 -- mJ -- 225 -- nC -- 30 -- nC -- 105 -- nC -- 7 -- nH www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT Package Marking and Ordering Information Parameter TC = 25C unless otherwise noted Min. Typ. Max Unit VFM IF = 15 A IF = 15 A TC = 25 C TC = 125 C - 1.8 1.6 2.2 - V V IRM VR = 600 V TC = 25 C - - 100 A trr IF =1 A, diF/dt = 100 A/s, VR = 30 V IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C TC = 25 C - - 35 40 ns ns IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C TC = 25 C TC = 25 C - 18 13 27.5 - ns ns nC ta tb Qrr Conditions (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 3 www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT Electrical Characteristics of the Diode FGH30N60LSD -- 600 V, 30 A PT IGBT Typical Performance Characteristics Figure 1.Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 90 90 o 60 30 15V 12V 10V 8V 60 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 Figure 3. Typical Saturation Voltage Characteritics 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 4. Transfer characteristics 90 90 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 60 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] VGE = 20V TC = 125 C 15V 12V 10V 8V Collector Current, IC [A] Collector Current, IC [A] o VGE = 20V TC = 25 C o TC = 125 C 60 30 30 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 0 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. Vge Common Emitter VGE = 15V 20 Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 1.4 60A 1.2 30A 1.0 IC = 15A 0.8 0.6 25 C 12 8 4 60A 30A IC = 15A 0 50 75 100 o Case Temperature, TC [ C] (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 o T = 25 C 16 125 0 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com (Continued) Figure 7. Saturation Voltage vs. Vge 20 Figure 8. Capacitance characteristics 13000 10000 Common Emitter TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 30A 60A TC = 25 C Cres 4 IC = 15A 100 50 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 Figure 9. Gate Charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteeristics 300 15 Common Emitter IC = 30A o 12 TC = 25 C Ic MAX (Pulsed) 100 Vcc = 100V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 1000 0 300V 200V 6 3 0 0 50 100 150 200 Gate Charge, Qg [nC] 50s Ic MAX (Continuous) 1ms 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature DC Operation 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-On Characteristics vs. Gate Resistance 80 200 Vcc = 400V 70 load Current : peak of square wave 100 Switching Time [ns] 60 50 40 30 tr Common Emitter VCC = 400V, VGE = 15V IC = 30A td(on) 20 o TC = 25 C Duty cycle : 50% 10 100s 10 0.1 0.1 250 Figure 11. Load Current Vs. Frequency Collector Current, IC [A] Common Emitter VGE = 0V, f = 1MHz Coes o o TC = 125 C Tc = 100 C 10 Powe Dissipation = 192W 0 0.1 1 10 100 Frequency, f [kHz] (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 0 10 20 30 40 50 Gate Resistance, RG [] 1000 5 www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-Off Characteristics vs. Gate Resistance Figure 14. Turn-On Characteristics vs. Collector Current 500 3000 Common Emitter VGE = 15V, RG = 6.8 o TC = 25 C Switching Time [ns] Switching Time [ns] o tf 1000 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) TC = 125 C 100 tr td(on) 10 o TC = 25 C o TC = 125 C 100 0 10 20 30 40 20 50 30 40 Gate Resistance, RG [] Figure 15. Turn-Off Characteristics vs. Collector Current 60 70 80 Figure 16. Switching Loss vs Gate Resistance 6000 500 Common Emitter VCC = 400V, VGE = 15V IC = 30A Switching Loss [mJ] tf Switching Time [ns] 50 Collector Current, IC [A] 1000 Common Emitter VGE = 15V, RG = 6.8 o TC = 25 C o td(off) TC = 125 C o 100 TC = 25 C o Eoff TC = 125 C 10 Eon 100 20 30 40 50 60 70 1 80 Collector Current, IC [A] 5 10 15 20 25 30 35 40 45 50 Gate Resistance, RG [] Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching SOA Characteristics 200 100 100 Collector Current, IC [A] Switching Loss [mJ] Eoff 10 Eon 1 Common Emitter VGE = 15V, RG = 6.8 10 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 10 1 20 30 40 50 60 70 80 1 Collector Current, IC [A] (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 6 10 100 1000 Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT Typical Performance Characteristics FGH30N60LSD -- 600 V, 30 A PT IGBT Figure 19. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 20. Forward Characteristics 10 Figure 21. Reverse Current 1E-4 REVERSE CURRENT, IR [A] 100 FORWARD CURRENT, IF [A] 1 10 o TC=125 C 1 o TC=75 C 1E-5 o TC = 125 C o 1E-6 TC = 75 C 1E-7 o TC = 25 C 1E-8 o TC=25 C 0.1 0.0 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 200 300 400 500 600 REVERSE VOLTAGE, VR [V] FORWARD VOLTAGE, VF [V] REVERSE RECOVERY TIME, trr [ns] Figure 22. Reverse Recovery Time 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 IF = 15A o TC = 125 C o TC = 75 C o TC = 25 C 200 300 400 500 diF/dt [A/s] (c)2007 Fairchild Semiconductor Corporation FGH30N60LSD Rev. C1 7 www.fairchildsemi.com FGH30N60LSD -- 600 V, 30 A PT IGBT Mechanical Dimensions Figure 23. 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