© 2013 IXYS CORPORATION, All Rights Reserved
IXYK100N120C3
IXYX100N120C3
VCES = 1200V
IC110 = 100A
VCE(sat) ≤ ≤
≤ ≤
≤
3.5V
tfi(typ) = 110ns
DS100404A(03/13)
High-Speed IGBT
for 20-50 kHz Switching
Features
zOptimized for Low Switching Losses
zSquare RBSOA
zPositive Thermal Coefficient of
Vce(sat)
zAvalanche Rated
zHigh Current Handling Capability
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 150°C 1.25 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 1 2.9 3.5 V
TJ = 150°C 4.1 V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 1200 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 188 A
ILRMS Terminal Current Limit 160 A
IC110 TC = 110°C 100 A
ICM TC = 25°C, 1ms 490 A
IATC = 25°C 50 A
EAS TC = 25°C 1.2 J
SSOA VGE = 15V, TVJ = 150°C, RG = 1Ω ICM = 200 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
PCTC = 25°C 1150 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
1200V XPTTM IGBTs
GenX3TM
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXYK)
E
G
C
PLUS247 (IXYX)
G
Tab
Tab
E
C
G
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N120C3
IXYX100N120C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 52 S
Cies 6000 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 353 pF
Cres 130 pF
Qg(on) 270 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 50 nC
Qgc 93 nC
td(on) 32 ns
tri 90 ns
Eon 6.50 mJ
td(off) 123 ns
tfi 110 ns
Eoff 2.90 5.00 mJ
td(on) 32 ns
tri 90 ns
Eon 10.10 mJ
td(off) 140 ns
tfi 125 ns
Eoff 3.55 mJ
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK100N120C3
IXYX100N120C3
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
11V
10V
7V
9V
6V
8V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V 10V
8V
11V
9V
7V
6V
Fi g . 3. Ou tp ut C har acteri sti cs @ T
J
= 125º C
0
20
40
60
80
100
120
140
160
180
200
012345678
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
9V
VGE
= 15V
13V
12V
11V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 100A
I C = 50A
I C = 200A
Fi g . 5. C o l l ector -to -E mi tter Vol tag e vs.
Gate-to -Emi tter V o l tag e
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
6789101112131415
V
GE
- Volts
V
CE
- Volts
I C
= 200
A
TJ = 25ºC
100
A
50
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.54.55.56.57.58.59.5
V
GE
- Volts
I
C
- Amperes
TJ = - 40ºC
25ºC
125ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N120C3
IXYX100N120C3
Fig . 7. Tran scon d uctan ce
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 1 0. R ever s e-B i as Sa fe Op erati n g Area
0
20
40
60
80
100
120
140
160
180
200
220
200 300 400 500 600 700 800 900 1000 1100 1200 1300
VCE - Volts
IC - Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaaaa
0.3
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
QG - NanoCoulombs
VGE - Volts
V
CE
= 600V
I
C
= 100A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK100N120C3
IXYX100N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
12345678910
R
G
- Ohms
Eoff - MilliJoules
0
2
4
6
8
10
12
14
16
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
12345678910
R
G
- Ohms
t f i - Nanoseconds
0
100
200
300
400
500
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig . 13. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
50
70
90
110
130
150
170
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t f i - Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction T emperature
50
70
90
110
130
150
170
25 50 75 100 125
T
J
- Degrees Centigrade
t f i - Nanoseconds
100
120
140
160
180
200
220
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 50A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N120C3
IXYX100N120C3
IXYS REF: IXY_100N120C3(9T)10-26-11
Fig . 19. I n ducti v e Turn -on Swi t ch in g Ti mes vs.
Co l l ect o r Cur r en t
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i - Nanoseconds
27
28
29
30
31
32
33
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive T urn-on Switching T imes vs.
Jun ct ion Temp er atu r e
0
20
40
60
80
100
120
140
160
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
27
28
29
30
31
32
33
34
35
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive T urn-on Switching T imes vs.
Gate Resi st an ce
0
40
80
120
160
200
12345678910
R
G
- Ohms
t
r i - Nanoseconds
20
30
40
50
60
70
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
