AO4354
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 23A
R
DS(ON)
(at V
GS
=10V) < 3.7mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 5.3mΩ
Application
100% UIS Tested
100% R
g
Tested
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
G
D
S
SOIC-8
Top View Bottom View
D
D
DD
SSSG
Symbol
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
°C/W
°C/W
Maximum Junction-to-Ambient
A D
16 75
24
Maximum Junction-to-Lead
3.1
T
A
=25°C
A
V 100ns 36
Avalanche Current
C
T
A
=100°C
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30 V
P
D
°C
T
A
=25°C
T
A
=100°C
Power Dissipation
B
Maximum UnitsParameter
I
D
W
1.2
68
174
V±20Gate-Source Voltage
Continuous Drain
Current
Thermal Characteristics
Pulsed Drain Current
C
A
-55 to 150
mJ
37
Avalanche energy L=0.1mH
C
23
14
Junction and Storage Temperature Range
UnitsParameter Typ
Maximum Junction-to-Ambient
A
°C/W
R
θJA
31
59 40
Max
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AO4354
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.2 1.8 2.2 V
3 3.7
T
J
=125°C 4.1 5
4.1 5.3 mΩ
g
FS
105 S
V
SD
0.7 1 V
I
S
4 A
C
iss
2010 pF
C
oss
898 pF
C
rss
124 pF
R
g
0.9 1.8 2.7 Ω
Q
g
(10V) 36 49 nC
Q
g
(4.5V) 17 23 nC
Q
gs
6 nC
Q
gd
8 nC
t
D(on)
7.5 ns
t
r
4.0 ns
t
37.0
ns
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Diode Forward Voltage
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=20A
DYNAMIC PARAMETERS
V
DS
=5V, I
D
=20A
V
DS
=V
GS,
I
D
=250µA
Drain-Source Breakdown Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
D
=250µA, V
GS
=0V
I
DSS
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
µA
Zero Gate Voltage Drain Current
mΩ
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
Turn-On DelayTime
Input Capacitance
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Turn-On Rise Time
Gate Drain Charge
Total Gate Charge
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Source Charge
Output Capacitance
Turn-Off DelayTime
R
DS(ON)
Static Drain-Source On-Resistance
Gate resistance
Forward Transconductance
SWITCHING PARAMETERS
t
D(off)
37.0
ns
t
f
7.5 ns
t
rr
14 ns
Q
rr
20.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
R
GEN
=3
Ω
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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AO4354
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
6
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3.5V
4.5V
10V
3V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
2
4
6
8
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
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AO4354
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
C
=25°C
100
µ
s
10ms
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction
-
to
-
TA=25°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Operating Area (Note F)
RθJA=75°C/W
Figure 14: Single Pulse Power Rating Junction
-
to
-
Ambient (Note F)
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AO4354
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
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