BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■SGS -THO MS ON PRE F ERRE D SALES T YP E S
■COMP LEM EN TARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic pack age.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectiv ely.
INTERNAL SCHEMATIC DIAG RAM
June 1997
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
VCER Collector-Base Voltage (RBE = 100 Ω) 70 90 115 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 3 A
ICM Collector Peak Current 5 A
IBBase Current 1 A
Ptot Total Dissipation at Tc ≤ 25 oC40W
P
tot Total Dissipation at Tamb ≤ 25 oC2W
T
stg Storage Tem perature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
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