1075MP - GHz Technology, Inc.

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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1075 MP

75 Watt, 50 Volts, Class C

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The 1075 MP is a COMMON BASE bipolar transistor. It is designed for

pulsed systems in the frequency band 1025-1150 MHz. The device has gold

thin-film metallization for proven highest MTTF. The transistor includes

input prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55FU, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 250 Watts Pk

Maximum Voltage and Current

BVces Collector to Emitter Voltage 65 Volts

BVebo Emitter to Base Voltage 3.5 Volts

Ic Collector Current 6.5 Amps Pk

Maximum Temperatures

Storage Temperature - 65 to + 150 C

Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout

ηc

VSWR

Power Out

Power Input

Power Gain

Efficiency

Load Mismatch Tolerance

F= 1025-1150 MHz

Vcc = 50 Volts

PW = 10 µsec

DF = 1%

F = 1090 MHz

7.5 9.0

20:1

Watts

BVebo

BVces

Hfe

Cob

θjc2

Emitter to Base Breakdown

Collector to Emitter Breakdo wn

DC Current Gain to Emitter

Output Capacitance

Thermal Resistance

Ie = 5 mA

Ic = 15mA

Vce = 5V, Ic = 100 mA

Vcb = 50 V, f = 1 MHz

Pulsed

3.5

45 50

0.6

Volts

C/W

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Initial Issue June, 1994