NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES * The device is an ideal choice for OSC, low noise, high-gain amplification * High breakdown voltage technology for SiGe Tr. * 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Part Number NESG210719 Order Number NESG210719-A NESG210719-T1 NESG210719-T1-A Package Quantity Supplying Form 3-pin ultra super minimold 50 pcs * 8 mm wide embossed taping package (19, 1608 PKG) (Non reel) * Pin 3 (Collector) face the perforation side (Pb-Free) of the tape 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 200 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10419EJ03V0DS (3rd edition) Date Published January 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NESG210719 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 100 nA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA 100 nA 140 180 220 Note 1 VCE = 1 V, IC = 5 mA Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 7 10 GHz Gain Bandwidth Product (2) fT DC Current Gain hFE RF Characteristics Insertion Power Gain (1) S21e 2 Insertion Power Gain (2) S21e 2 VCE = 1 V, IC = 20 mA, f = 2 GHz 12 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz 6.5 8 dB VCE = 1 V, IC = 20 mA, f = 2 GHz 9 dB Noise Figure NF VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 0.9 1.5 dB Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 6 9 dB VCB = 1 V, IE = 0 mA, f = 1 MHz 0.5 0.7 pF Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank FB Marking D7 hFE Value 140 to 220 Data Sheet PU10419EJ03V0DS NESG210719 <R> TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PU10419EJ03V0DS 3 NESG210719 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10419EJ03V0DS NESG210719 Remark The graphs indicate nominal characteristics. Data Sheet PU10419EJ03V0DS 5 NESG210719 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10419EJ03V0DS NESG210719 S-PARAMETERS Data Sheet PU10419EJ03V0DS 7 NESG210719 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 8 Data Sheet PU10419EJ03V0DS