HITACHI 2SD1127K). ee SILICON NPN TRIPLE DIFFUSED POWER SWITCHING eT max. Ll. Base 2. Collector (Flange) 1,5k9 130% 3. Emitter tye.) typ.) 3 (Dimensions in mn} (JEDEC TO-220AB) M@ ABSOLUTE MAXIMUM RATINGS (Ta=25C) MAXIMUM CHANNEL DISSIPATION ne CURVE Item Symbol 2SDI 127) | Unit 60 Collector to base voltage Vcso i200 | OV ~ a te a = Collector to emitter voltage | VceO 120 Vv 2 _ Emitter to base voltage | VEBo 7 v 2 aa Collector current Ic 10 \ A 2 . | 2 Collector peak current iCipeak) is | A z Collector power dissipation | Pc* 50 Ww 3 Junction temperature Tj 150 C 8 Storage temperature Tag 351 to +150 Cc C to E diode forward current | Ip* 0 OA " so Ww en ee Ae Case temperature Te (C) * Value at Tc = 25C. M ELECTRICAL CHARACTERISTICS S (Ta=25C) Item Symbol | Test Condition min. typ. max. | Unit "Collector to emilter sustain vollage | VCEOGus) | Ic = 200mA, RBE = oc _ 120 ~ oe Vv Emitter to base breakdown voltage V(BRIEBO lE= 200mA, Ic = 0 a : 7 = _ | oy "Collector cutoff current IcBo VcB = 120, le=0 a | 100 | HAL DC current transfer ratio hee: Vcr =2, Ic = 1OA* 1000 fo Collector to emitter saturation voltage Vesa) fo | 7 _ 1s) vO ~ Ic= 10A, Ip = 25mA" a Base to emitter saturation voltage VBE(sat) | | - 2.0 | Vv Tum on ume _ = _ . popper is le = 5A, lat =-[b2 = 10mA nn ne } oo Turn off time | loff | 8.0 | ps * Pulse Test, HITACHI 2SD1127) AREA OF SAFE OPERATION TYPICAL OUTPUT CHARACTERISTICS 10 a g 8 2 fs=0 I 10 a 0 ] 3 Collecter to emitter voltage Ver (Vv) Collecter to emitter vollage Vee () DC CURRENT TRANSFER RATIO VS. SATURATION VOLTAGE VS, COLLECTOR COLLECTOR CURRENT CURRENT 10,000 Icfla= 100 oo lon volrage Wer () ltage Vaca () g BC current transter ratio bre Collector to emitter sat Base to emitter saturation a) 3 10 w Lo a We x Collector current: Ie (A) Collector current be (AY