CAT5113
© 2007 Catalyst Semiconductor, Inc. 1 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
100-Tap Digitally Programmable Potentiometer (DPP™)
FEATURES
100-position linear taper potentiometer
Non-volatile EEPROM wiper storage
10nA ultra-low standby current
Single supply operation: 2.5V – 6.0V
Increment up/down serial interface
Resistance values: 1kΩ, 10kΩ, 50kΩ and 100kΩ
Available in PDIP, SOIC, TSSOP and MSOP
packages
APPLICATIONS
Automated product calibration
Remote control adjustments
Offset, gain and zero control
Tamper-proof calibrations
Contrast, brightness and volume controls
Motor controls and feedback systems
Programmable analog functions
For Ordering Information details, see page 12.
DESCRIPTION
The CAT5113 is a single digitally programmable
potentiometer (DPP™) designed as a electronic
replacement for mechanical potentiometers. Ideal for
automated adjustments on high volume production
lines, they are also well suited for applications where
equipment requiring periodic adjustment is either
difficult to access or located in a hazardous or remote
environment.
The CAT5113 contains a 100-tap series resistor array
connected between two terminals RH and RL. An up/
down counter and decoder that are controlled by three
input pins, determines which tap is connected to the
wiper, RW. The wiper setting, stored in nonvolatile
memory, is not lost when the device is powered down
and is automatically reinstated when power is
returned. The wiper can be adjusted to test new
system values without affecting the stored setting.
Wiper-control of the CAT5113 is accomplished with
three input control pins, CS
¯¯ , U/D
¯, and INC
¯¯¯. The INC
¯¯¯
input increments the wiper in the direction which is
determined by the logic state of the U/D
¯ input. The CS
¯¯
input is used to select the device and also store the
wiper position prior to power down.
The digitally programmable potentiometer can be
used as a three-terminal resistive divider or as a two-
terminal variable resistor.
FUNCTIONAL DIAGRAM
R
H
R
L
Control
and
Memory
Power On Recall
V
CC
GND
U/D
IN
C
CS
R
H
R
L
R
W
R
W
Electronic Potentiometer
Implementation
DetailedGeneral
ONE
OF
THIRTY TWO
DECODER
31
30
29
28
2
1
0
TRANSFER
GATES RESISTOR
ARRAY
5-BIT
NONVOLATILE
MEMORY
STORE AND
RECALL
CONTROL
CIRCUITRY
5-BIT
UP/DOWN
COUNTER
V
CC
GND
R
H
R
W
R
L
U/D
INC
CS
CAT5113
Doc. No. MD-2009 Rev. T 2 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PIN CONFIGURATION
PDIP 8-Lead (L)
SOIC 8 Lead (V)
MSOP 8 Lead (Z)
INC
¯¯¯ 1
8
VCC
U/D
¯ 2
7
CS
¯¯
RH 3
6
RL
GND 4
5
RWB
CAT
TSSOP 8 Lead (Y)
CS
¯¯ 1
8
RL
VCC 2
7
RWB
INC
¯¯¯ 3
6
GND
U/D
¯ 4
5
RH
CAT
PIN DESCRIPTIONS
Name Function
INC
¯¯¯ Increment Control
U/D
¯ Up/Down Control
RH Potentiometer High Terminal
GND Ground
RW Buffered Wiper Terminal
RL Potentiometer Low Terminal
CS
¯¯ Chip Select
VCC Supply Voltage
PIN DESCRIPTION
INC
¯¯¯: Increment Control Input
The INC
¯¯¯ input moves the wiper in the up or down
direction determined by the condition of the U/D
¯ input.
U/D
¯: Up/Down Control Input
The U/D
¯ input controls the direction of the wiper
movement. When in a high state and CS
¯¯ is low, any
high-to-low transition on INC
¯¯¯ will cause the wiper to
move one increment toward the RH terminal. When in
a low state and CS
¯¯ is low, any high-to-low transition
on INC
¯¯¯ will cause the wiper to move one increment
towards the RL terminal.
RH: High End Potentiometer Terminal
RH is the high end terminal of the potentiometer. It is
not required that this terminal be connected to a
potential greater than the RL terminal. Voltage applied
to the RH terminal cannot exceed the supply voltage,
VCC or go below ground, GND.
RW: Wiper Potentiometer Terminal
RW is the wiper terminal of the potentiometer. Its
position on the resistor array is controlled by the
control inputs, INC
¯¯¯, U/D
¯ and CS
¯¯ . Voltage applied to
the RW terminal cannot exceed the supply voltage,
VCC or go below ground, GND.
RL: Low End Potentiometer Terminal
RL is the low end terminal of the potentiometer. It is
not required that this terminal be connected to a
potential less than the RH terminal. Voltage applied to
the RL terminal cannot exceed the supply voltage, VCC
or go below ground, GND. RL and RH are electrically
interchangeable.
CS
¯¯ : Chip Select
The chip select input is used to activate the control
input of the CAT5113 and is active low. When in a
high state, activity on the INC
¯¯¯ and U/D
¯ inputs will not
affect or change the position of the wiper.
DEVICE OPERATION
The CAT5113 operates like a digitally controlled
potentiometer with RH and RL equivalent to the high
and low terminals and RW equivalent to the mecha–
nical potentiometer's wiper. There are 100 available
tap positions including the resistor end points, RH and
RL. There are 99 resistor elements connected in
series between the RH and RL terminals. The wiper
terminal is connected to one of the 100 taps and
controlled by three inputs, INC
¯¯¯, U/D
¯ and CS
¯¯ . These
inputs control a seven-bit up/down counter whose
output is decoded to select the wiper position. The
selected wiper position can be stored in non-volatile
memory using the INC
¯¯¯ and CS
¯¯ inputs.
With CS
¯¯ set LOW the CAT5113 is selected and will
respond to the U/D
¯ and INC
¯¯¯ inputs. HIGH to LOW
transitions on INC
¯¯¯ wil increment or decrement the
wiper (depending on the state of the U/D
¯ input and
seven-bit counter). The wiper, when at either fixed
terminal, acts like its mechanical equivalent and does
not move beyond the last position. The value of the
counter is stored in nonvolatile memory whenever CS
¯¯
transitions HIGH while the INC
¯¯¯ input is also HIGH.
When the CAT5113 is powered-down, the last stored
wiper counter position is maintained in the nonvolatile
memory. When power is restored, the contents of the
memory are recalled and the counter is set to the
value stored.
With INC
¯¯¯ set low, the CAT5113 may be de-selected
and powered down without storing the current wiper
position in nonvolatile memory. This allows the system
to always power up to a preset value stored in non-
volatile memory.
CAT5113
© 2007 Catalyst Semiconductor, Inc. 3 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
OPERATION MODES
INC
¯¯¯ CS
¯¯ U/D
¯ Operation
High to Low Low High Wiper toward H
High to Low Low Low Wiper toward L
High Low to High X Store Wiper Position
Low Low to High X No Store, Return to Standby
X High X Standby
ABSOLUTE MAXIMUM RATINGS(1)
Parameters Ratings Units
Supply Voltage
V
CC to GND -0.5 to +7V V
Inputs
CS
¯¯ to GND -0.5 to VCC +0.5 V
INC
¯¯¯ to GND -0.5 to VCC +0.5 V
U/D
¯ to GND -0.5 to VCC +0.5 V
H to GND -0.5 to VCC +0.5 V
L to GND -0.5 to VCC +0.5 V
W to GND -0.5 to VCC +0.5 V
Parameters Ratings Units
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix) 0 to 70 ºC
Industrial (‘I’ suffix) -40 to +85 ºC
Junction Temperature +150 ºC
Storage Temperature -65 to 150 ºC
Lead Soldering (10s max) +300 ºC
RELIABILITY CHARACTERISTICS
Symbol Parameter Test Method Min Typ Max Units
VZAP(2) ESD Susceptibility MIL-STD-883, Test Method 3015 2000
V
ILTH(2) (3) Latch-Up JEDEC Standard 17 100
mA
TDR Data Retention MIL-STD-883, Test Method 1008 100
Years
NEND Endurance MIL-STD-883, Test Method 1003 1,000,000
Stores
DC ELECTRICAL CHARACTERISTICS
VCC = +2.5V to +6V unless otherwise specified
Power Supply
Symbol Parameter Conditions Min Typ Max Units
VCC Operating Voltage Range 2.5 – 6.0 V
VCC = 6V, f = 1MHz, IW = 0 – – 100 µA
ICC1 Supply Current (Increment) VCC = 6V, f = 250kHz, IW = 0 – – 50 µA
Programming, VCC = 6V – – 1000 µA
ICC2 Supply Current (Write) VCC = 3V – – 500 µA
ISB1(3) Supply Current (Standby) CS
¯¯ = VCC - 0.3V
U/D
¯, INC
¯¯¯ = VCC - 0.3V or GND – 0.01 1 µA
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to VCC + 1V
(4) IW = source or sink
(5) These parameters are periodically sampled and are not 100% tested.
CAT5113
Doc. No. MD-2009 Rev. T 4 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Logic Inputs
Symbol Parameter Conditions Min Typ Max Units
IIH Input Leakage Current VIN = VCC – – 10 µA
IIL Input Leakage Current VIN = 0V – – -10 µA
VIH1 TTL High Level Input Voltage 2 – VCC V
VIL1 TTL Low Level Input Voltage 4.5V VCC 5.5V 0 – 0.8 V
VIH2 CMOS High Level Input Voltage VCC x 0.7 – VCC + 0.3 V
VIL2 CMOS Low Level Input Voltage 2.5V VCC 6V -0.3 – VCC x 0.2 V
Potentiometer Characteristics
Symbol Parameter Conditions Min Typ Max Units
-01 Device 1
-10 Device 10
-50 Device 50
RPOT Potentiometer Resistance
-00 Device 100
k
Pot. Resistance Tolerance ±20 %
VRH Voltage on RH pin 0 VCC V
VRL Voltage on RL pin 0 VCC V
Resolution 1 %
INL Integral Linearity Error IW 2µA 0.5 1 LSB
DNL Differential Linearity Error IW 2µA 0.25 0.5 LSB
VCC = 5V, IW = 1mA 400
RWI Wiper Resistance VCC = 2.5V, IW = 1mA 1000
IW Wiper Current (1) -4.4 4.4 mA
TCRPOT TC of Pot Resistance 300 ppm/ºC
TCRATIO Ratiometric TC 20 ppm/ºC
VN Noise 100kHz / 1kHz 8/24 nV/Hz
CH/CL/CW Potentiometer Capacitances 8/8/25 pF
fc Frequency Response Passive Attenuator, 10k 1.7 MHz
Note:
(1) This parameter is not 100% tested.
CAT5113
© 2007 Catalyst Semiconductor, Inc. 5 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
AC CONDITIONS OF TEST
VCC Range 2.5V VCC 6V
Input Pulse Levels 0.2VCC to 0.7VCC
Input Rise and Fall Times 10ns
Input Reference Levels 0.5VCC
AC OPERATING CHARACTERISTICS
VCC = +2.5V to +6.0V, VH = VCC, VL = 0V, unless otherwise specified
Symbol Parameter Min Typ(1) Max Units
tCI CS
¯¯ to INC
¯¯¯ Setup 100 – – ns
tDI U/D
¯ to INC
¯¯¯ Setup 50 – – ns
tID U/D
¯ to INC
¯¯¯ Hold 100 – – ns
tIL INC
¯¯¯ LOW Period 250 – – ns
tIH INC
¯¯¯ HIGH Period 250 – – ns
tIC INC
¯¯¯ Inactive to CS
¯¯ Inactive 1 – – µs
tCPH CS
¯¯ Deselect Time (NO STORE) 100 – – ns
tCPH CS
¯¯ Deselect Time (STORE) 10 – – ms
tIW INC
¯¯¯ to VOUT Change – 1 5 µs
tCYC INC
¯¯¯ Cycle Time 1 – – µs
tR, tF(2) INC
¯¯¯ Input Rise and Fall Time – – 500 µs
tPU(2) Power-up to Wiper Stable – – 1 ms
tWR Store Cycle – 5 10 ms
A.C. TIMING
Notes:
(1) Typical values are for TA = 25ºC and nominal supply voltage.
(2) This parameter is periodically sampled and not 100% tested.
(3) MI in the A.C. Timing diagram refers to the minimum incremental change in the W output due to a change in the wiper position.
CS
INC
U/D
RW
tCI tIL
MI(3)
90% 90%
10%
(store)
tCYC
tIH tIC tCPH
tFtR
tDI tID
tIW
CAT5113
Doc. No. MD-2009 Rev. T 6 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
APPLICATIONS INFORMATION
Potentiometer Configuration
Applications
Programmable Instrumentation Amplifier Programmable Sq. Wave Oscillator (555)
Sensor Auto Referencing Circuit
(a) resistive divider (b) variable resistance (c) two-port
R
2
R
3
A
3
A
1
=
A
2
=
A
3
= ¼ LM6064
R
2
=
R
3
=
R
4
= 5k
R
POT
= 10k
+5V
+2.5V
V
O
R
4
R
3
R
4
R
2
R
1
28
3
2
6
5
7
9
4
10 11
8
1
1
7
4
+
–
+
–
+
–
+5V
V
1
(-)
V
2
(+)
CAT5113/5114
DPP
+5V
0.01µF
0.01µF
0.003µF
pR
POT
(1-p)R
POT
R
2
C
R
1
R
B
R
A
5
3
6
7
84
12
65
3
28
1
7
4
+5V
DPP
555
+5V
-5V
V
REF
=
1V
V
OUT
=
1V ± 1mV
V
SHIFT
=
100mV
V
SENSOR
= 1V ±
50mV
ICIA
V
CORR
4
11
1
499k
20kICIB
499k
2
3
6
5
499k
499k
10k
0.01µF
OSC
CS
IC3A
¼ 74HC132
+
–
+
–
Sensor
28
1
7
7
4
+5V +200mV
CAT5111/5112
IC2
DPP
+
–
CAT5113
© 2007 Catalyst Semiconductor, Inc. 7 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
Programmable Voltage Regulator
Programmable I to V Convertor
Automatic Gain Control
Programmable Bandpass Filter
Programmable Current Source/Sink
0.1µF
1µF
6.8µF
R
1
11
k
100
k
V
O
(REG)
R
3
10
k
R
2
820
1.23V
28
1
7
4
5
3
6
+5V
DPP
2952
CAT5113/5114
V
OUT
FBSDSHUTDOWN
V
IN
(UNREG)
GND
C
A
T5111/5112
+5V +5V
Serial
Bus
V
S
+2.5V
+2.5V
+5V
2
7
7
5
6
311
1
+
–
+
–
R
1
100k
R
1
100k
A
1
=A
2
= LMC6064A
R
2.5k
I
S
A
2
R
1
100k
R
1
100k
+
–
+5V
R3
100k
R2
10k
R1 C
2
C
1
0.001µF
0.001µF
1µF
2
7
34
6
+
–
28
1
7
4
+5V
CAT5113/5114
DPP
V
O
A
1
V
S
+2.5V
50k
+2.5V
V
O
A
1
+5V
I
S
2
7
3
3
5
4
6
6
+
–
A
2
LT1097
+5V
27
34
6
+
–
28
1
7
4
+5V
CAT5113/5114
DPP
pR (1-p)R
3303301M
10k
+5V
+5V
V
S
0 V
S
2.5V
0 V
O
2.5
V
V
O
+2.5V
+5V
IC3
CAT5111/5112
CLO
R
1
R
3
R
2
V
LL
IC1
393
AI
IC4
V
UL
2
3
+
–
1
28
1
7
4
+5V
10k
10k
OSC
IC2
74HC132
0.1µF
+
–
CHI
6
5
5
6
3
+
–
7
DPP
CAT5113
Doc. No. MD-2009 Rev. T 8 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PACKAGE OUTLINES
PDIP 8-LEAD (300MIL) (L)
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC Standard MS001.
(3) Dimensioning and tolerancing per ANSI Y14.5M-1982
A
e
b
c
E1
b2
L
A2
A1
E
D
eB
SYMBOL
A
A1
b
b2
D
E
E1
e
eB
L
MIN
0.38
0.36
9.02
7.62
6.09 6.35
7.87
2.92 3.81
NOM
0.46
1.771.14
7.87
2.54 BSC
MAX
4.57
A2 3.05 3.81
0.56
c 0.21 0.26 0.35
10.16
8.25
7.11
9.65
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
CAT5113
© 2007 Catalyst Semiconductor, Inc. 9 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
SOIC 8-LEAD NARROW BODY (150MIL) (V)
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC Specification MS-012.
SYMBOL
A1
A
b
C
D
E
E1
h
L
MIN
0.10
1.35
0.33
4.80
5.80
3.80
0.25
0.40
NOM
0.250.19
MAX
0.25
1.75
0.51
5.00
6.20
4.00
e 1.27 BSC
0.50
1.27
1
0° 8°
E
E1
D
A1
e
L
1
C
b
h x 45
A
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
CAT5113
Doc. No. MD-2009 Rev. T 10 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
8-LEAD TSSOP (Y)
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC Standard MO-153
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
85
14
EE1
E/2
PIN #1 IDENT.
D
b
L
1
e
A
A1
A2
SEE DETAIL A
SEE DETAIL A
SEATING PLANE
c
GAGE PLANE
0.25
SYMBOL
A
A1
A2
b
c
D
E
E1
e
L
1
MIN
0.05
0.80
0.09
2.90
6.30 6.4
4.30
0.00 8.00
NOM
0.90
0.300.19
3.00
4.40
0.60 0.750.50
MAX
1.20
0.15
1.05
0.20
3.10
6.50
4.50
0.65 BSC
CAT5113
© 2007 Catalyst Semiconductor, Inc. 11 Doc. No. MD-2009 Rev. T
Characteristics subject to change without notice
8-LEAD MSOP (Z)
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC Specification MS-187.
(3) Stand off height/coplanarity are considered as special characteristics.
c
E
E1
eee
b
D
A2 A
A1
L2
GAUGE
PLANE
L
L1
θ
SYMBOL MIN NOM MAX
A1.1
A1 0.05 0.10 0.15
A2 0.75 0.85 0.95
b 0.28 0.33 0.38
c
D 2.90 3.00 3.10
E 4.80 4.90 5.00
E1 2.90 3.00 3.10
e0.65BSC
L 0.35 0.45 0.55
L1
L2
0º 6º
For current Tape and Reel information,
download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
CAT5113
Doc. No. MD-2009 Rev. T 12 © 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
EXAMPLE OF ORDERING INFORMATION
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The standard lead finish is NiPdAu.
(3) This device used in the above example is a CAT5113VI-10-GT3 (SOIC, Industrial Temperature, 10k, NiPdAu, Tape & Reel).
(4) For Matte-Tin finish, contact factory.
ORDERING
PART NUMBER
CAT5113LI-01-G
CAT5113LI-10-G
CAT5113LI-50-G
CAT5113LI-00-G
CAT5113VI-01-G
CAT5113VI-10-G
CAT5113VI-50-G
CAT5113VI-00-G
CAT5113YI-01-G
CAT5113YI-10-G
CAT5113YI-50-G
CAT5113YI-00-G
CAT5113ZI-01-G
CAT5113ZI-10-G
CAT5113ZI-50-G
CAT5113ZI-00-G
Prefix Device # Suffix
CAT 5113 V I -10 – G
T3
Optional
Company ID
Temperature Range
I = Industrial (-40ºC to 85ºC)
Resistance
-01: 1 k
-10: 10 k
-50: 50 k
-00: 100 k
Tape & Reel
T: Tape & Reel
3: 3000/Reel
Product Number
5113
Package
L: PDIP
V: SOIC
Y: TSSOP
Z: MSOP
Lead Finish
Blank: Matte-Tin
G: NiPdAu
REVISION HISTORY
Date Rev. Reason
10/09/2003 M Revised Features
Revised DC Electrical Characteristics
03/10/2004 N Updated Potentiometer Parameters
03/29/2004 O Changed Green Package marking for SOIC from W to V
04/02/2004 P Add 1kW version to data sheet
04/08/2004 Q Eliminated data sheet designation
Updated Tape and Reel specs in Ordering Information
01/25/2005 R Updated Potentiometer Parameters
04/22/2006 S Updated Example of Ordering Information
06/01/2007 T Added Package Outline
Added MD- in front of Document No.
Copyrights, Trademarks and Pat ents
Trademarks and registered trademarks of Catalyst Semiconduct or include each of the following:
Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™
Catalyst Semiconductor has been issued U. S. and foreign patents and has patent applications pending that protect its products.
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where
personal injury or death may occur.
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical
semiconductor applications and may not be complete.
Catalyst Semiconductor, Inc.
Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054
Phone: 408.542.1000 Document No: MD-2009
Fax: 408.542.1200 Revision: T
www.catsemi.com Issue date: 06/01
/
07