VSMY98545ADS - VISHAY - Datasheet.Live

VSMY98545ADS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 29-Nov-16 1Document Number: 84390

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Power Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

DESCRIPTION

As part of the SurfLightTM portfolio, the VSMY98545ADS

is an infrared, 850 nm emitting diode based on surface

emitter technology with high radiant power and high speed,

molded in low thermal resistance SMD package with lens.

A 42 mil chip provides outstanding radiant intensity and

allows DC operation of the device up to 1 A. Superior ESD

characteristics are ensured by an integrated Zener diode.

FEATURES

• Package type: surface mount

• Double stack technology

• Package form: power QFN

• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24

• Peak wavelength: λp = 850 nm

• Zener diode for ESD protection up to 2 kV

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 45°

• Designed for high drive currents: up to 1 A (DC) and up

to 5 A pulses

• Low thermal resistance: RthJP = 9 K/W

• Floor life: 168 h, MSL 3, according to J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared illumination for CMOS cameras (CCTV)

• Illumination for cameras (3D gaming)

• Machine vision

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)

VSMY98545ADS 630 ± 45 850 14

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMY98545ADS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR5V

Forward current IF1A

Peak forward current tp/T = 0.5, tp = 100 μs IFM 2A

Surge forward current tp = 100 μs IFSM 5A

Power dissipation PV3.5 W

Junction temperature Tj115 °C

Operating temperature range Tamb -40 to +85 °C

Storage temperature range Tstg -55 to +100 °C

Soldering temperature According to Fig. 7, J-STD-20 Tsd 260 °C

Thermal resistance junction / pin JESD 51 RthJP 9K/W

VSMY98545ADS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 29-Nov-16 2Document Number: 84390

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Radiant Intensity vs. Forward Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 20406080100

PV- Power Dissipation (W)

Tamb - Ambient Temperature (°C)

RthJA = 9 K/W

0.2

0.4

0.6

0.8

1.0

0 20406080100

IF- Forward Current (A)

Tamb - Ambient Temperature (°C)

RthJA = 9 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 1 A, tp = 20 ms VF-3.13.5V

Temperature coefficient of VFIF = 1 A - -3 - mV/K

Reverse current VR = 5 V IR- - 10 μA

Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ-130-pF

Radiant intensity IF = 1 A, tp = 20 ms Ie400 630 - mW/sr

Radiant power IF = 1 A, tp = 20 ms φe-1340-mW

Temperature coefficient of φIF = 1 A, tp = 20 ms TKφ- -0.3 - %/K

Angle of half intensity ϕ-± 45-deg

Peak wavelength IF = 1 A λp830 850 870 nm

Spectral bandwidth IF = 1 A Δλ -35-nm

Temperature coefficient of λpIF = 1 A, tp = 20 ms TKλp-0.3-nm/K

Rise time IF = 1 A tr-14-ns

Fall time IF = 1 A tf-17-ns

100

1000

10 000

2.0 3.0 4.0 5.0

IF- Forward Current (mA)

VF- Forward Voltage (V)

tp= 100 μs

100

1000

10 100 1000

Ie,rel - Relative Radiant Intensity (%)

IF- Forward Current (mA)

tp= 100 μs

VSMY98545ADS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 29-Nov-16 3Document Number: 84390

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Relative Radiant Intensity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement

TAPING DIMENSIONS in millimeters

Notes

• Empty component pockets sealed with top cover tape.

• 7 inch reel - 600 pieces per reel.

• The maximum number of consecutive missing lamps is two.

• In accordance with ANSI/EIA 481-1-A-1994 specifications.

100

700 750 800 850 900 950

Ie, rel - Relative Radiant Intensity (%)

λ- Wavelength (nm)

IF= 1.0 A

Ie, rel - Relative Radiant Intensity

0.6

80°

0°

0.7

0.4 0.2 0

30°

70°

60°

50°

40°

10° 20°

1.0

0.9

0.8

ϕ - Angular Displacement

Ø 13.0

(0.512)

typ.

14.40 (0.57) typ.

Ø 60.0 ± 1.0

(2.36 ± 0.039) Ø 178 ± 2.0

(7.0 ± 0.08)

4.00 ± 0.10

8.00 ± 0.10

12.00 + 0.30

- 0.10

2.00 ± 0.05

1.75 ± 0.10

5.50 ± 0.05

Ø 1.50 + 0.10

Ø 1.50 + 0.25

Cathode

VSMY98545ADS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 29-Nov-16 4Document Number: 84390

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

Notes

• Tolerance is ± 0.10 mm (0.004") unless otherwise noted.

• Specifications are subject to change without notice.

Ø 2.76

3.85 ± 0.1

2.24 ± 0.1

0.40 ± 0.05

0.15 ± 0.05

R0.15

R1.38

2.80

1.00

1.90

2.70

Anode

Cathode

1.00.5

2.8

VSMY98545ADS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 29-Nov-16 5Document Number: 84390

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SOLDER PROFILE

Fig. 7 - Lead (Pb)-free Reflow Solder Profile

According to J-STD-020

DRYPACK

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Floor life (time between soldering and removing from MBB)

must not exceed the time indicated on MBB label:

Floor life: 168 h

Conditions: Tamb < 30 °C, RH < 60 %

Moisture sensitivity level 3, according to J-STD-020B

DRYING

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.

Devices taped on reel dry using recommended conditions

192 h at 40 °C (+ 5 °C), RH < 5 %.

255 °C to 260 °C

10 s max.

6 °C/s max.

3 °C/s max.

150 °C

200 °C

217 °C

60 s to 120 s60 s max.

Time

Temperature

22932

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