U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS U SERIES Gpg = 11.5dB NF = 2.7dB J SERIES TOP VIEW 1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150C SST SERIES Junction Operating Temperature -55 to 150C SOT-23 TOP VIEW Maximum Power Dissipation Continuous Power Dissipation (J/SST) Continuous Power Dissipation (U) 4 350mW 5 D 1 S 2 3 500mW G Maximum Currents Gate Current (J/SST) 10mA Gate Current (U) 20mA Maximum Voltages Gate to Drain -25V Gate to Source -25V COMMON ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(F) Gate to Source Forward Voltage 0.7 IG TYP MAX 1.15 UNIT V CONDITIONS IG = -1A, VDS = 0V IG = 10mA, VDS = 0V Gate Operating Current -15 pA VDG = 9V, ID = 10mA Drain to Source On Resistance 35 VGS = 0V, ID = 1mA en Equivalent Noise Voltage 6 nV/Hz NF Noise Figure Gpg Power Gain 2 gfg Forward Transconductance rDS(on) gog IGSS Output Conductance f = 105MHz 1.5 f = 450MHz 2.7 f = 105MHz 16 f = 450MHz 11.5 f = 105MHz 14 f = 450MHz 13 f = 105MHz f = 450MHz 0.16 0.55 Gate Reverse Current Linear Integrated Systems dB VDS = 10V, ID = 10mA mS -1 * VDS = 10V, ID = 10mA, f = 100Hz nA VGS = -15V, VDS = 0V 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 1/31/12 Rev#A5 ECN#U/J/SST 308 SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. CHARACTERISTIC VGS(off) Gate to Source Cutoff Voltage TYP 3 IDSS Source to Drain Saturation Current Ciss Input Capacitance Crss Reverse Transfer Capacitance 1.9 gfs Forward Transconductance 14 gos Output Conductance 110 J/SST308 J/SST309 J/SST310 MIN MAX MIN MIN MAX -1 -6.5 -1 -4 -2 -6.5 V VDS = 10V, ID = 1nA 12 75 12 30 24 75 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz MAX 4 8 10 250 8 UNIT CONDITIONS mS 250 250 VDS = 10V, ID = 10mA f = 1kHz S SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. CHARACTERISTIC VGS(off) Gate to Source Cutoff Voltage TYP 3 IDSS Source to Drain Saturation Current Ciss Input Capacitance Crss U308 U309 MIN MAX -1 -6.5 12 75 MIN U310 MAX -1 -4 -2.5 -6.5 V VDS = 10V, ID = 1nA 12 30 24 75 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz 5 5 5 Reverse Transfer Capacitance 1.9 2.5 2.5 2.5 gfs Forward Transconductance 14 gos Output Conductance 110 10 250 CONDITIONS MIN 4 10 UNIT MAX 10 250 mS 250 VDS = 10V, ID = 10mA f = 1kHz S SOT-23 0.89 1.03 0.37 0.51 1 0.210 0.170 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS NOTES Absolute maximum ratings are limiting values above which serviceability may be impaired. Measured at optimum input noise match. 3. Pulse test: PW 300s, Duty Cycle 3% 4. Derate 2.8mW/C above 25C 5. Derate 4mW/C above 25C Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 1. 2. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protege of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 1/31/12 Rev#A5 ECN#U/J/SST 308