Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12 Rev#A5 ECN#U/J/SST 308
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
Gpg = 11.5dB
LOW HIGH FREQUENCY NOISE
NF = 2.7dB
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)4
350mW
Continuous Power Dissipation (U)5
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
-25
V
IG = -1µA, VDS = 0V
VGS(F)
Gate to Source Forward Voltage
0.7
1.15
IG = 10mA, VDS = 0V
IG
Gate Operating Current
-15
pA
VDG = 9V, ID = 10mA
rDS(on)
Drain to Source On Resistance
35
Ω
VGS = 0V, ID = 1mA
en
Equivalent Noise Voltage
6
nV/√Hz
VDS = 10V, ID = 10mA, f = 100Hz
NF
Noise Figure
f = 105MHz
1.5
dB
VDS = 10V, ID = 10mA
f = 450MHz
2.7
Gpg
Power Gain2
f = 105MHz
16
f = 450MHz
11.5
gfg
Forward
Transconductance
f = 105MHz
14
mS
f = 450MHz
13
gog
Output Conductance
f = 105MHz
0.16
f = 450MHz
0.55
IGSS
Gate Reverse Current
-1
nA
VGS = -15V, VDS = 0V
U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
J SERIES
SST SERIES
U SERIES
TOP VIEW
1
2
3
SOT-23
TOP VIEW
D
G
S
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12 Rev#A5 ECN#U/J/SST 308
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
CHARACTERISTIC
TYP
J/SST308
J/SST309
J/SST310
UNIT
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
VGS(off)
Gate to Source Cutoff Voltage
-1
-6.5
-1
-4
-2
-6.5
V
VDS = 10V, ID = 1nA
IDSS
Source to Drain Saturation Current3
12
75
12
30
24
75
mA
VDS = 10V, VGS = 0V
Ciss
Input Capacitance
4
pF
VDS = 10V, VGS = -10V
f = 1MHz
Crss
Reverse Transfer Capacitance
1.9
gfs
Forward Transconductance
14
8
10
8
mS
VDS = 10V, ID = 10mA
f = 1kHz
gos
Output Conductance
110
250
250
250
µS
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
CHARACTERISTIC
TYP
U308
U309
U310
UNIT
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
VGS(off)
Gate to Source Cutoff Voltage
-1
-6.5
-1
-4
-2.5
-6.5
V
VDS = 10V, ID = 1nA
IDSS
Source to Drain Saturation Current3
12
75
12
30
24
75
mA
VDS = 10V, VGS = 0V
Ciss
Input Capacitance
4
5
5
5
pF
VDS = 10V, VGS = -10V
f = 1MHz
Crss
Reverse Transfer Capacitance
1.9
2.5
2.5
2.5
gfs
Forward Transconductance
14
10
10
10
mS
VDS = 10V, ID = 10mA
f = 1kHz
gos
Output Conductance
110
250
250
250
µS
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Measured at optimum input noise match.
3. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
4. Derate 2.8mW/ºC above 25ºC
5. Derate 4mW/ºC above 25ºC
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
0.210
0.170
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed at
Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé
of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and
vice president of R&D at Intersil, and founder/president of Micro Power Systems.
