HEWLETT fw PACKARD COMPONENTS 7 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS 9082-2301/02 /03/05 5082-2800(1N5711) 5082- 2810(1N5712) 5082-2811(1N5713) Gry 5082-2835 5082-2900 HSCH-1001(1N6263) Features LOW TURN-ON VOLTAGE: .34V AT 1mA PICO-SECOND SWITCHING SPEED HIGH BREAKDOWN VOLTAGE: UP TO 70V UNIFORM FORWARD TRACKING Description /Applications The 5082-2800, 2810, 2811 are passivated Schottky barrier diodes which use a patented guard ring design to achieve a high breakdown voltage. They are packagedina low cost glass package. They are well suited for high level detecting, mixing, switching, gating, log or A-D convert- ing, video detecting, frequency discriminating, sampling and wave shaping. The 5082-2835 is a passivated Schottky diode in alowcost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for UHF mixing. The 5082-2300 and 2900 Series devices are unpassivated Schottky diodes in a giass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers. The HSCH-1001 is a Hybrid Schottky diode sealed ina rugged double stud Outline 12 glass package suitable for automatic insertion. The low turn-on voitage, fast switching speed, and low cost of these diodes make them ideal for general purpose switching. Application Bulletins 13, 14, 15, and 16 describe applications in which these diodes are used for speed up of a transistor, clipping, clamping, and sampling, respectively. Maximum Ratings at Tcase= 25C Junction Operating and Storage Temperature Range 5082-2305, 2301, 2302, 2303, 2900 . -60C to +125C 5082-2800, 2810, 2811, HSCH-1001 -65C to +200C 082-2835 ...............006- weees 760C to +150C Operation of these devices within the above temperature ratings will assure a device Mean Time Between Failure (MTBF) of approximately 1 x 107 hours. DC Power Dissipation (Measured in an infinite heat sink) Derate linearly to zero at maximum rated temperature 5082-2305, 2301, 2302, 2303, 2900 .......... 125 mW 5082-2800, 2810, 2811... eee ee. 250 mW 5082-2835 ....... eee eter eeeeeeeees 150 MW HSCH-1001 .......... wee cece ee eeeeeeeeess 400 MW Peak Inverse Voltage ...... beeen eee eeceeeesees VBR Package Dimensions HIGH CONDUCTANCE DIODES SCHOTTKY BARRIER DIODES & 79 Electrical Specifications at T,=25C Part Number | Package ~ ,082- Outline 2800 - 15 -INS711111 [| 15 2305 | 15 | e302] | 15 | g302l21 | 15 | 330321 | 16 2810 | 15 -1N5712I1] | 15 2811 | 5 1N713I1) | 15 2900 15 2835 | 15 | HScH-10011]] 12. | _(1N6263) | (DO-35) Test Conditions. Notes: 1. Effective Minority Carrier Lifetime (7) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA except for HSCH-1001 (1N6263), 1N5711, 1N5712, and 1N5713 which are measured at 5 mA. 2. 5082-2301 = 1N5165, 5082-2302 = 1N5166, 5082-2303 = 1N5167. Matched Pairs and Quads Basic oe Part Matched Number Pair 6082. | Unconnected | 2301 +| 5082-2306 The AVe = 20 mv | ACo=0.2pF | -2303-| 5082-2308 AVp =20mV | AVp ACo = 0.2 pF se 2900. | 5082-2912 | 5 AVE =30mV | s 2800 | 5082-2804 : AVe = 20 mV 2811 BROWN RED ORANGE YELLOW Figure 1. I-V Curve Showing Figure 2. 5082-2300 and 5082-2900 Figure 3. I-V Curve Showing Typical Temperature Variation for Series Typical Reverse Current vs. Typical Temperature Variation for 5082-2300 Series Schottky Diodes. Reverse Voltage at Ta = 25C. 5082-2800 or 1N5711 Schottky Diodes. Figure 4. (5082-2800 or 1N5711) Figure 5. |-V Curve Showing Figure 6. (5082-2810 or 1N5712) Typical Variation of Reverse Typical Temperature Variation for Typical Variation of Reverse Current (IR) vs. Reverse Voltage the 5082-2810 or 1N5712 Schottky Current (IR) vs. Reverse Voltage (Va) at Various Temperatures. Diode. (VR) at Various Temperatures. SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES 81 82 Figure 8. Figure 7. I|-V Curve Showing Typical Temperature Variation for 5082-2811 Schottky Diode. Figure 10. (5082-2835) Typical Variation of Reverse Current (IR) vs. (5082-2811 Reverse Voltage (Vr) at Various Reverse Voltage. Temperatures. Figure 13. Typical Capacitance vs. Reverse Voltage (Vr). (C) ) Figure 11. 5082-2300 and -2900 Series Typical Capacitance vs. Typical Figure 9. I-V Curve Showing Variation of Reverse Current (Rr) vs. Typical Temperature Variations for Reverse Voltage (Vr) at Various Temperatures. 5082-2835 Schottky Diode. Figure 12. (5082-2800 or 1N5711) Typical Capacitance (C) vs Reverse Voltage (Vr). Figure 14. Typical Dynamic Resistance (Rp) vs. Forward Current (IF). Figure 15. Typical Variation of Forward Current (If) vs. Forward Voltage (VF) at Various Temperatures for the HSCH-1001. Figure 17. Typical Capacitance (C) vs. Reverse Voitage (VR) for the HSCH-1001. Mechanical Specifications Lead Material: Lead Finish: Maximum Soldering Temperature: Minimum Lead Strength: Typical Package Inductance: Typical Package Capacitance: Outline 15 Dumet 2800 Series: Tin 2300, 2900 Series: Gold 230C for 5 sec. 4 Ib. Pull 2800 Series: 2.0 nH 2300, 2900 Series: 3.0 nH 2800 Series: 0.2 pF 2300, 2900 Series: 0.07 pF The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Figure 16. Typical Variation of Reverse Current (Ir) vs. Reverse Voltage (Vr) at Various Temperatures for the HSCH-1001. Figure 18. Typical Dynamic Resistance (Rp) vs. Forward Current (lf) at Ta = 25C for the HSCH-1001. Outline 12 (DO-35) Dumet Tin 260C for 10 sec. 10 Ib. Pull 1.8 nH 0.25 pF HIGH CONDUCTANCE DIODES SCHOTTKY BARRIER DIODES & 83