BAT46W Vishay Semiconductors Small Signal Schottky Diode Features * For general purpose applications * This diode features very low turn-on volte3 age and fast switching. * This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. * This diode is also available in the DO-35 case with the type designation BAT46 and in the MiniMELF case with the type designation LL46. * Lead (Pb)-free component 17431 * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code BAT46W Marking BAT46W-GS18 or BAT46W-GS08 Remarks L6 Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Symbol Value Unit VRRM 100 V Forward continuous current Tamb = 25 C Repetitive peak forward current tp < 1 s, < 0.5, Tamb = 25 C IFRM Surge forward current tp < 10 ms, Tamb = 25 C IFSM Tamb = 65 C Ptot 1) Power dissipation 1) IF 150 1) mA 350 1) mA 750 1) mA 150 1) mW Valid provided that electrodes are kept at ambient temperature Document Number 85663 Rev. 1.2, 04-Aug-05 www.vishay.com 1 BAT46W Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 3001) C/W Thermal resistance junction to ambient air Tj 125 C Tamb - 55 to + 125 C TS - 55 to +150 C Junction temperature Ambient operating temperature range Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse breakdown voltage 2) Leakage current 2) Forward voltage Diode capacitance 2) Symbol Min V(BR)R 100 Typ. Max Unit V VR = 1.5 V IR 0.5 A VR = 1.5 V, Tj = 60 C IR 5 A VR = 10 V IR 0.8 A VR = 10 V, Tj = 60 C IR 7.5 A VR = 50 V IR 2 A VR = 50 V, Tj = 60 C IR 15 A VR = 75 V IR 5 A VR = 75 V, Tj = 60 C IR 20 A IF = 0.1 mA VF 0.25 V IF = 10 mA VF 0.45 V IF = 250 mA VF VR = 0 V, f = 1 MHz Ctot 10 pF VR = 1 V, f = 1 MHz Ctot 6 pF 1.00 V Pulse test tp < 300 s, < 2 % www.vishay.com 2 Test condition IR = 100 A (pulsed) Document Number 85663 Rev. 1.2, 04-Aug-05 BAT46W Vishay Semiconductors Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.55 (0.022) 0.15 (0.006) max. Mounting Pad Layout Cathode Band 2.40 (0.094) 2.55 (0.100) 2.85 (0.112) 3.55 (0.140) 3.85 (0.152) ISO Method E 1.40 (0.055) 1.70 (0.067) 0.72 (0.028) 17432 1.40 (0.055) Document Number 85663 Rev. 1.2, 04-Aug-05 www.vishay.com 3 BAT46W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85663 Rev. 1.2, 04-Aug-05