1N4454
Vishay Semiconductors
for merly General Semiconductor
Document Number 88110 www.vishay.com
13-May-02 1
Small-Signal Diode Rever se V oltage 100V
Forward Current 150mA
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm), 50K/box
F3/10K per 13”reel (52mm tape), 50K/box
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Reverse voltage VR75 V
Peak reverse voltage VRM 100 V
Maximum average rectified current half wave rectification IF(AV) 150 mA
with resistive load at Tamb = 25°C and f ≥50Hz(1)
Surge forward current at t < 1s and Tj= 25°CI
FSM 500 mA
Maximum power dissipation at Tamb = 25°C(1) Ptot 500 mW
Thermal resistance junction to ambient air(1) RθJA 350 °C/W
Maximum junction temperature TJ175 °C
Storage temperature range TS–65 to +175 °C
Electrical Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Min. Max. Unit
Maximum forward voltage drop at IF= 10mA VF–1.0 V
Leakage current at VR= 50V IR–100 nA
at VR= 75V 5 µA
Reverse breakdown voltage tested with 100µA pulses V(BR)R 100 –V
Capacitance at VF= VR= 0V Ctot –2pF
Reverse recover y time trr –4ns
from IF= 10mA to IR = 1mA, VR= 6V, RL= 100Ω
Rectification efficiency at f = 100MHz, VRF = 2V ηv0.45 ––
Note:
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
1N4454
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88110
213-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
200
400
600
800
1000
Admissible Power Dissipation
vs Ambient Temperature
0 100 200°C
10–2
10–1
1
10
102
103
mA
01
2V
IF
VF
Ptot
Tamb
1
10
103
102
104
Ω
rF
IF
Dynamic Forward Resistance
vs Forward Current
10–210–111010
2
TJ = 25°C
f = 1.0 kHz
mA
Forward Characteristics
0.7
0.8
0.9
1.0
1.1
Relative Capacitance
vs Reverse Voltage
02 10V
VR
TJ = 25°C
f = 1.0MHz
468
Ctot (VR)
Ctot (0V)
TJ = 25°CTJ = 25°C
TJ = 100°C
mW
1
10
102
103
104
nA
0 100 200°C
IR
Tj
Leakage Current
vs Junction Temperature
VR = 20V
0.1
1
100
10
A
IFRM
tp
Admissible Repetitive Peak
Forward Current vs Pulse Duration
10–510–410–310–210–11 10s
0.5
0.2
0.1
n = 0 IFRM
v = tp/T T = 1/fp
tpt
T
I
