N-CHANNEL
POWER MOSFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 1 of 3
IRF330 / 2N6760
Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
High Input Impedance / RDS(on) < 1.0
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 400V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 5.5A
ID Continuous Drain Current Tc = 100°C 3.5A
IDM Pulsed Drain Current
(1)
22A
PD Total Power Dissipation at Tc = 25°C 75W
Derate Above 25°C 0.6W/°C
EAS Single Pulse Avalanche Energy
(2)
1.7mJ
IAR Avalanche Current
(1)
5.5A
dv/dt Peak Diode Recovery
(3)
4V/ns
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
TL Lead Temperature
(1.6mm (0.063”) from case for 10sec)
300°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 1.67 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Typ. Units
LS + LD Total Inductance 6.1 nH
No
NoNo
Notes
testes
tes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3) @ ISD 5.5A, di/dt 90A/µs, VDD BVDSS, TJ 150°C, Suggested RG = 7.5
(4) Pulse Width 300us, δ 2%
N-CHANNEL
POWER MOSET
IRF330 / 2N6760
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0mA 400 V
J
T
VDSS
B
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C ID = 1.0mA 0.46 V/°C
VGS = 10V ID = 3.5A
(4)
1.0
RDS(on) Static Drain-Source
On-State Resistance VGS = 10V ID = 5.5A
(4)
1.22
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250
µ
A 2 4 V
gfs Forward Transconductance VDS
15V I DS = 3.5A
(4)
2.9 S(
Ʊ
)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 250
µ
A
IGSS Forward Gate-Source
Leakage VGS = 20V 100
IGSS Reverse Gate-Source
Leakage VGS = -20V -100
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 620
Coss Output Capacitance VDS = 25V 200
Crss Reverse Transfer
Capacitance f = 1.0MHz 75
pF
Qg Total Gate Charge VGS = 10V 17 39
Qgs Gate-Source Charge ID = 5.5A 2 6
Qgd Gate-Drain Charge VDS = 0.5BVDSS 8 20
nC
td(on) Turn-On Delay Time 30
tr Rise Time 40
td(off) Turn-Off Delay Time 80
tf Fall Time
VDD = 200V
ID = 5.5A
RG = 7.5
35
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 5.5
ISM Pulse Source Current
(1)
22
A
IS = 5.5A TJ = 25°C
VSD Diode Forward Voltage VGS = 0
(4)
1.4 V
trr Reverse Recovery Time IF = 5.5A TJ = 25°C 700 ns
Qrr Reverse Recovery Charge VDD
50V di/dt = 100A/
µ
s
(4)
6.2
µ
C
N-CHANNEL
POWER MOSET
IRF330 / 2N6760
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AA
)
Pin 1 - Gate Pin 2 - Source Case - Drain
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)