N-CHANNEL
POWER MOSFET
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Document Number 9142
Issue 1
Page 1 of 3
IRF330 / 2N6760
• Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
• High Input Impedance / RDS(on) < 1.0Ω
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 400V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 5.5A
ID Continuous Drain Current Tc = 100°C 3.5A
IDM Pulsed Drain Current
(1)
22A
PD Total Power Dissipation at Tc = 25°C 75W
Derate Above 25°C 0.6W/°C
EAS Single Pulse Avalanche Energy
(2)
1.7mJ
IAR Avalanche Current
(1)
5.5A
dv/dt Peak Diode Recovery
(3)
4V/ns
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
TL Lead Temperature
(1.6mm (0.063”) from case for 10sec)
300°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 1.67 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Typ. Units
LS + LD Total Inductance 6.1 nH
No
NoNo
Notes
testes
tes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3) @ ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%