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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
CC256x Dual-Mode Bluetooth
®
Controller
CC2560A NRND; CC2564 NRND
1 Device Overview
1
1.1 Features
1
TI's Single-Chip Bluetooth Solution With Bluetooth
Basic Rate (BR), Enhanced Data Rate (EDR), and
Low Energy (LE) Support; Available in Two
Variants:
Dual-Mode Bluetooth CC2564 Controller
Bluetooth CC2560 Controller
CC2564 Bluetooth 4.1 Controller Subsystem
Qualified (QDID 58852); Compliant up to the HCI
Layer
Highly Optimized for Low-Cost Designs:
Single-Ended 50-ΩRF Interface
Package Footprint: 76 Terminals, 0.6-mm Pitch,
8-mm x 8-mm mrQFN
BR/EDR Features Include:
Up to 7 Active Devices
Scatternet: Up to 3 Piconets Simultaneously, 1
as Master and 2 as Slaves
Up to 2 SCO Links on the Same Piconet
Support for All Voice Air-Coding Continuously
Variable Slope Delta (CVSD), A-Law, μ-Law,
and Transparent (Uncoded)
CC2560B/CC2564B Devices Provide an
Assisted Mode for HFP 1.6 Wideband Speech
(WBS) Profile or A2DP Profile to Reduce Host
Processing and Power
Support of Multiple Bluetooth Profiles With
Enhanced QoS
LE Features Include:
Support of Up to 10 (CC2564B) Connections
Multiple Sniff Instances Tightly Coupled to
Achieve Minimum Power Consumption
Independent Buffering for LE Allows Large
Numbers of Multiple Connections Without
Affecting BR/EDR Performance.
Built-In Coexistence and Prioritization Handling
for BR/EDR and LE
Best-in-Class Bluetooth (RF) Performance
(TX Power, RX Sensitivity, Blocking)
Class 1 TX Power Up to +10 dBm
–95 dbm Typical RX Sensitivity
Internal Temperature Detection and
Compensation to Ensure Minimal Variation in
RF Performance Over Temperature, No
External Calibration Required
Improved Adaptive Frequency Hopping (AFH)
Algorithm With Minimum Adaptation Time
Provides Longer Range, Including 2x Range
Over Other LE-Only Solutions
Advanced Power Management for Extended
Battery Life and Ease of Design
On-Chip Power Management, Including Direct
Connection to Battery
Low Power Consumption for Active, Standby,
and Scan Bluetooth Modes
Shutdown and Sleep Modes to Minimize Power
Consumption
Physical Interfaces:
UART Interface With Support for Maximum
Bluetooth Data Rates
UART Transport Layer (H4) With Maximum
Rate of 4 Mbps
Three-Wire UART Transport Layer (H5) With
Maximum Rate of 4 Mbps (CC2560B and
CC2564B Only)
Fully Programmable Digital PCM-I2S Codec
Interface
Flexibility for Easy Stack Integration and Validation
Into Various Microcontrollers, Such as MSP430™
and ARM®Cortex®-M3 and Cortex®-M4 MCUs
CC256x Bluetooth Hardware Evaluation Tool: PC-
Based Application to Evaluate RF Performance of
the Device and Configure Service Pack
Device Pin-to-Pin Compatible With Previous
Devices or Modules
1.2 Applications
Mobile Accessories
Sports and Fitness Applications
Wireless Audio Solutions
Remote Controls
Toys
Test and Measurement
Industrial: Cable Replacement
Wireless Sensors
Automotive Aftermarket
Point of Service (POS)
Wellness and Health
CC2560A NRND; CC2564 NRND
2
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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Product Folder Links: CC2560A CC2560B CC2564 CC2564B
Device Overview Copyright © 2012–2016, Texas Instruments Incorporated
(1) For more information on these devices, see Section 9.2,Packaging and Ordering.
(2) NRND = Not recommended for new designs
1.3 Description
The TI CC256x device is a complete Bluetooth BR/EDR/LE HCI solution that reduces design effort and
enables fast time to market. Based on TI’s seventh-generation Bluetooth core, the CC256x device
provides a product-proven solution that is Bluetooth 4.1 compliant. When coupled with a microcontroller
unit (MCU), this HCI device offers best-in-class RF performance with a range of about 2X compared to
other Bluetooth LE-only solutions. Furthermore, TI’s power-management hardware and software
algorithms provide significant power savings in all commonly used Bluetooth BR/EDR/LE modes of
operation.
The TI Dual-Mode Bluetooth Stack software is certified and provided royalty free for TI's MSP430 and
ARM Cortex-M3 and Cortex-M4 MCUs. Other MPUs can be supported through TI's third party. iPod®
(MFi) protocol is supported by add-on software packages. For more information, see TI Dual-Mode
Bluetooth Stack. Some of the profiles supported include the following:
Serial port profile (SPP)
Advanced audio distribution profile (A2DP)
Audio/video remote control profile (AVRCP)
Handsfree profile (HFP)
Human interface device (HID)
Generic attribute profile (GATT)
Several Bluetooth LE profiles and services
In addition to software, this solution consists of multiple reference designs with a low BOM cost, including
a new Bluetooth audio sink reference design for customers to create a variety of applications for low-end,
low-power audio solutions.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE
CC2560A (NRND)(2) RVM (76) 8.0 mm × 8.0 mm × 0.6 mm
CC2560B RVM (76) 8.0 mm × 8.0 mm × 0.6 mm
CC2564 (NRND)(2) RVM (76) 8.0 mm × 8.0 mm × 0.6 mm
CC2564B RVM (76) 8.0 mm × 8.0 mm × 0.6 mm
space
PCM/I2S
UART
CC256x
I/O
interface
Coprocessor
(See Note)
BR/EDR
main processor
Modem
arbitrator DRP
Power
management
Clock
management
Power Shutdown Slow
clock
Fast
clock
2.4-GHz
band pass filter
SWRS121-001
HCI
CC2560A NRND; CC2564 NRND
3
CC2560A, CC2560B, CC2564, CC2564B
www.ti.com
SWRS121E JULY 2012REVISED JANUARY 2016
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Product Folder Links: CC2560A CC2560B CC2564 CC2564B
Device OverviewCopyright © 2012–2016, Texas Instruments Incorporated
1.4 Functional Block Diagram
Note: The following technologies and assisted modes cannot be used simultaneously with the coprocessor: Bluetooth
LE, ANT, assisted HFP 1.6 (WBS), and assisted A2DP. One and only one technology or assisted mode can be used
at a time.
Figure 1-1. Functional Block Diagram
CC2560A NRND; CC2564 NRND
4
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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Product Folder Links: CC2560A CC2560B CC2564 CC2564B
Revision History Copyright © 2012–2016, Texas Instruments Incorporated
Table of Contents
1 Device Overview ......................................... 1
1.1 Features .............................................. 1
1.2 Applications........................................... 1
1.3 Description............................................ 2
1.4 Functional Block Diagram ............................ 3
2 Revision History ......................................... 4
3 Device Comparison ..................................... 5
4 Terminal Configuration and Functions.............. 6
4.1 Pin Attributes ......................................... 7
4.2 Connections for Unused Signals ..................... 8
5 Specifications ............................................ 9
5.1 Absolute Maximum Ratings .......................... 9
5.2 ESD Ratings.......................................... 9
5.3 Power-On Hours...................................... 9
5.4 Recommended Operating Conditions................ 9
5.5 Power Consumption Summary...................... 10
5.6 Electrical Characteristics............................ 11
5.7 Timing and Switching Characteristics............... 12
6 Detailed Description ................................... 21
6.1 Overview ............................................ 21
6.2 Functional Block Diagram........................... 21
6.3 Clock Inputs ......................................... 21
6.4 Functional Blocks.................................... 24
6.5 Bluetooth BR/EDR Features ........................ 34
6.6 Bluetooth LE Description............................ 35
6.7 Bluetooth Transport Layers ......................... 36
6.8 Changes from CC2560A and CC2564 to CC2560B
and CC2564B Devices.............................. 36
7 Applications, Implementation, and Layout........ 37
7.1 Reference Design Schematics and BOM for Power
and Radio Connections ............................. 37
8 Device and Documentation Support ............... 38
8.1 Device Support...................................... 38
8.2 Documentation Support............................. 38
8.3 Related Links........................................ 38
8.4 Community Resources.............................. 39
8.5 Trademarks.......................................... 39
8.6 Electrostatic Discharge Caution..................... 39
8.7 Glossary............................................. 39
9 Mechanical, Packaging, and Orderable
Information .............................................. 40
9.1 mrQFN Mechanical Data............................ 40
9.2 Packaging and Ordering ............................ 42
2 Revision History
Changes from Revision D (January 2014) to Revision E Page
Changed organizational flow of document in compliance with Data Sheet Council standard.............................. 1
Changed document title ............................................................................................................. 1
Changed Section 1.1, Features..................................................................................................... 1
Changed Section 1.3,Description.................................................................................................. 2
Changed Device Information table ................................................................................................. 2
Added Section 5.2,ESD Ratings .................................................................................................. 9
Changed values for continuous transmission for GFSK and EDR in Section 5.5.1,Static Current Consumption .... 10
Deleted idle mode in Section 5.5.1,Static Current Consumption ............................................................ 10
Changed values for average current in Section 5.5.2.2,Current Consumption for Different LE Scenarios ............ 11
Added supported crystal frequency in Section 6.3.2.3,Fast Clock Using External Crystal .............................. 24
Changed Section 6.4.4,Assisted Modes (CC2560B and CC2564B Devices) ............................................. 30
Added dual channel support in Table 6-5........................................................................................ 32
Added 4, 8. and 12 block lengths in Table 6-7.................................................................................. 32
Added 4 subband support in Table 6-8........................................................................................... 32
Added SNR support in Table 6-9 ................................................................................................. 32
Added Assisted A2DP sink range of 2–54 in Table 6-10 ...................................................................... 32
Changed Section 6.5,Bluetooth BR/EDR Description ........................................................................ 34
Changed Section 6.6,Bluetooth LE Description ............................................................................... 35
Changed Figure 7-1................................................................................................................. 37
Changed description of 0.1-µF and 1.0-µF capacitors and of reference designators C31 and U5 and in Table 7-1.. 37
Changed A1 corner orientation in Figure 9-3 ................................................................................... 43
CC2560A NRND; CC2564 NRND
5
CC2560A, CC2560B, CC2564, CC2564B
www.ti.com
SWRS121E JULY 2012REVISED JANUARY 2016
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Device ComparisonCopyright © 2012–2016, Texas Instruments Incorporated
(1) The assisted modes (HFP 1.6 and A2DP) are not supported simultaneously. Furthermore, the assisted modes are not supported
simultaneously with BLE or ANT.
(2) NRND = Not recommended for new designs
(3) Does not support simultaneous operation of LE and ANT
3 Device Comparison
Table 3-1 lists the features of the CC256x device variants.
Table 3-1. CC256x Family Members
DEVICE DESCRIPTION TECHNOLOGY SUPPORTED ASSISTED MODES
SUPPORTED(1)
BR/EDR LE ANT HFP 1.6
(WBS) A2DP
CC2560A
(NRND)(2) Bluetooth 4.0 (with EDR)
CC2564
(NRND)(2)(3) Bluetooth 4.0 + BLE
Bluetooth 4.0 + ANT
CC2560B Bluetooth 4.1 (with EDR)
CC2564B(3) Bluetooth 4.1 + BLE
Bluetooth 4.1 + ANT
A30
A21
A31
A40
A1
A10
A11
A20
B19
B18
B10
B9
B1
B36
B28
B27
A2
A3
A4
A5
A6
A7
A8
A9
B2
B3
B4
B5
B6
B7
B8
B26
B25
B24
B23
B22
B21
B20
A29
A28
A27
A26
A25
A24
A23
A22
A32
A33
A34
A35
A36
A37
A38
A39
B29
B30
B31
B32
B33
B34
B35
B17
B16
B15
B14
B13
B12
B11
A19
A18
A17
A16
A15
A14
A13
A12
NC
NC
DIG_LDO_OUT
DIG_LDO_OUT
XTALM/FREFM
MLDO_OUT
nSHUTD
CL1.5_LDO_OUT
ADC_PPA_LDO_OUT
MLDO_OUT
NC
SRAM_LDO_OUT
MLDO_OUT
VSS_FREF
XTALP/FREFP
MLDO_IN
CL1.5_LDO_IN
MLDO_OUT
BT_RF
NC
NC
HCI_CTS
VSS
NC
HCI_RX
SLOW_CLK
VSS
NC
NC
VDD_IO
DIG_LDO_OUT
DIG_LDO_OUT
VDD_IO
TX_DBG
NC
VDD_IO
VDD_IO
NC
NC
NC
NC
NC
VDD_IO
DCO_LDO_OUT
VDD_IO
NC
NC
NC
DIG_LDO_OUT
VSS_DCO
NC
NC
HCI_RTS
HCI_TX
VDD_IO
AUD_FSYNC
NC
VDD_IO
DIG_LDO_OUT
NC
NC
AUD_CLK
AUD_OUT
AUD_IN
DIG_LDO_OUT
SWRS121-002
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
CC2560A NRND; CC2564 NRND
6
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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Terminal Configuration and Functions Copyright © 2012–2016, Texas Instruments Incorporated
4 Terminal Configuration and Functions
Figure 4-1 shows the bottom view of the pin attributes.
Figure 4-1. Pin Diagram (Bottom View)
CC2560A NRND; CC2564 NRND
7
CC2560A, CC2560B, CC2564, CC2564B
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Terminal Configuration and FunctionsCopyright © 2012–2016, Texas Instruments Incorporated
(1) I = input; O = output; I/O = bidirectional
(2) I/O Type: Digital I/O cells. HY = input hysteresis, current = typical output current
4.1 Pin Attributes
Table 4-1 describes the pin attributes.
Table 4-1. Pin Attributes
NAME NO. PULL AT
RESET DEF.
DIR.(1) I/O
Type(2) DESCRIPTION
I/O Signals
HCI_RX A26 PU I 8 mA HCI universal asynchronous receiver/transmitter (UART) data
receive
HCI_TX A33 PU O 8 mA HCI UART data transmit
HCI_RTS A32 PU O 8 mA HCI UART request-to-send
The host is allowed to send data when HCI_RTS is low.
HCI_CTS A29 PU I 8 mA HCI UART clear-to-send
The CC256x device is allowed to send data when HCI_CTS is
low.
AUD_FSYNC A35 PD I/O 4 mA pulse-code modulation (PCM) frame-sync signal Fail-safe
AUD_CLK B32 PD I/O HY, 4 mA PCM clock Fail-safe
AUD_IN B34 PD I 4 mA PCM data input Fail-safe
AUD_OUT B33 PD O 4 mA PCM data output Fail-safe
TX_DBG B24 PU O 2 mA TI internal debug messages. TI recommends
leaving an internal test point.
Clock Signals
SLOW_CLK A25 I 32.768-kHz clock in Fail-safe
XTALP/FREFP B4 I Fast clock in analog (sine wave)
Output terminal of fast-clock crystal Fail-safe
XTALM/FREFM A4 I Fast clock in digital (square wave)
Input terminal of fast-clock crystal Fail-safe
Analog Signals
BT_RF B8 I/O Bluetooth RF I/O
nSHUTD A6 PD I Shutdown input (active low)
Power and Ground Signals
VDD_IO
A17,
A34,
A38,
B18,
B19,
B21,
B22,
B25
I I/O power supply (1.8-V nominal)
MLDO_IN B5 I Main LDO input
Connect directly to battery
MLDO_OUT A5, A9,
B2, B7 I/O Main LDO output (1.8-V nominal)
CL1.5_LDO_IN B6 I Power amplifier (PA) LDO input
Connect directly to battery
CL1.5_LDO_OUT A7 O PA LDO output
DIG_LDO_OUT
A2, A3,
B15,
B26,
B27,
B35,
B36
ODigital LDO output
QFN pin B26 or B27 must be shorted to other
DIG_LDO_OUT pins on the PCB.
SRAM_LDO_OUT B1 O SRAM LDO output
DCO_LDO_OUT A12 O DCO LDO output
ADC_PPA_LDO_OUT A8 O ADC/PPA LDO output
CC2560A NRND; CC2564 NRND
8
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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Terminal Configuration and Functions Copyright © 2012–2016, Texas Instruments Incorporated
Table 4-1. Pin Attributes (continued)
NAME NO. PULL AT
RESET DEF.
DIR.(1) I/O
Type(2) DESCRIPTION
VSS A24,
A28 I Ground
VSS_DCO B11 I DCO ground
VSS_FREF B3 I Fast clock ground
4.2 Connections for Unused Signals
Table 4-2 lists the connections for unused signals.
Table 4-2. Connections for Unused Signals
FUNCTION PIN NUMBER DESCRIPTION
NC A1 Not connected
NC A10 Not connected
NC A11 Not connected
NC A14 Not connected
NC A18 Not connected
NC A19 Not connected
NC A20 Not connected
NC A21 Not connected
NC A22 Not connected
NC A23 Not connected
NC A27 Not connected
NC A30 Not connected
NC A31 Not connected
NC A40 Not connected
NC B9 Not connected
NC B10 Not connected
NC B16 Not connected
NC B17 Not connected
NC B20 Not connected
NC B23 Not connected
NC A13 TI internal use
NC A15 TI internal use
NC A16 TI internal use
NC A36 TI internal use
NC A37 TI internal use
NC A39 TI internal use
NC B12 TI internal use
NC B13 TI internal use
NC B14 TI internal use
NC B29 TI internal use
NC B30 TI internal use
NC B31 TI internal use
NC B28 TI internal use
CC2560A NRND; CC2564 NRND
9
CC2560A, CC2560B, CC2564, CC2564B
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SpecificationsCopyright © 2012–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 7.1,Reference Design for Power and
Radio Connections.
(2) Analog pins: BT_RF, XTALP, and XTALM
(3) The reference design supports a temperature range of 20°C to 70°C because of the operating conditions of the crystal.
5 Specifications
Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board
(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.
5.1 Absolute Maximum Ratings(1)
Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows:
VDD_IN = 3.6 V and VDD_IO = 1.8 V (unless otherwise indicated).
PARAMETERS MIN MAX UNIT
Supply voltage range VDD_IN –0.5 4.8 V(1)
VDDIO_1.8V –0.5 2.145 V
Input voltage to analog pins(2) –0.5 2.1 V
Input voltage to all other pins –0.5 VDD_IO
+ 0.5 V
Bluetooth RF inputs 10 dBm
Operating ambient temperature range, TA(3) –40 85 °C
Storage temperature range, Tstg –55 125 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.2 ESD Ratings
VALUE UNIT
V(ESD) electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500 V
Charged device model (CDM), per JEDEC specification JESD22- ±YYY V C101(2) ±250
5.3 Power-On Hours
DEVICE CONDITIONS POWER-ON HOURS
CC256x Duty cycle = 25% active and 75% sleep
Tambient = 70ºC 15,400 (7 Years)
(1) The device can be reliably operated for 7 years at Tambient of 85°C, assuming 25% active mode and 75% sleep mode (15,400
cumulative active power-on hours).
(2) A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm.
5.4 Recommended Operating Conditions
RATING CONDITION SYM MIN MAX UNIT
Power supply voltage VDD_IN 2.2 4.8 V
I/O power supply voltage VDD_IO 1.62 1.92 V
High-level input voltage Default VIH 0.65 x VDD_IO VDD_IO V
Low-level input voltage Default VIL 0 0.35 x VDD_IO V
I/O input rise and all times,10% to 90% asynchronous mode trand tf1 10 ns
I/O input rise and fall times, 10% to 90% synchronous mode (PCM) 1 2.5 ns
Voltage dips on VDD_IN (VBAT)
duration = 577 μs to 2.31 ms, period = 4.6 ms 400 mV
Maximum ambient operating temperature(1) (2) –40 85 °C
CC2560A NRND; CC2564 NRND
10
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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(1) VBAT + VIO + VSHUTDOWN
(2) VBAT + VIO
(3) At maximum output power (10 dBm)
(4) At maximum output power (8 dBm)
(5) Both π/4 DQPSK and 8DPSK
5.5 Power Consumption Summary
5.5.1 Static Current Consumption
OPERATIONAL MODE MIN TYP MAX UNIT
Shutdown mode(1) 1 7 µA
Deep sleep mode(2) 40 105 µA
Total I/O current consumption in active mode 1 mA
Continuous transmission—GFSK(3) 107 mA
Continuous transmission—EDR(4)(5) 112.5 mA
5.5.2 Dynamic Current Consumption
5.5.2.1 Current Consumption for Different Bluetooth BR/EDR Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz XTAL, nominal unit, 10-dBm output power
OPERATIONAL MODE MASTER AND SLAVE AVERAGE CURRENT UNIT
Synchronous connection oriented (SCO) link HV3 Master and slave 13.7 mA
Extended SCO (eSCO) link EV3 64 kbps, no retransmission Master and slave 13.2 mA
eSCO link 2-EV3 64 kbps, no retransmission Master and slave 10 mA
GFSK full throughput: TX = DH1, RX = DH5 Master and slave 40.5 mA
EDR full throughput: TX = 2-DH1, RX = 2-DH5 Master and slave 41.2 mA
EDR full throughput: TX = 3-DH1, RX = 3-DH5 Master and slave 41.2 mA
Sniff, four attempt, 1.28 seconds Master and slave 145 μA
Page or inquiry scan 1.28 seconds, 11.25 ms Master and slave 320 μA
Page (1.28 seconds) and inquiry (2.56 seconds) scans,
11.25 ms Master and slave 445 μA
A2DP source Master 13.9 mA
A2DP sink Master 15.2 mA
Assisted A2DP source Master 16.9 mA
Assisted A2DP sink Master 18.1 mA
Assisted WBS EV3; retransmit effort = 2;
maximum latency = 8 ms Master and slave 17.5 and 18.5 mA
Assisted WBS 2EV3; retransmit effort = 2;
maximum latency = 12 ms Master and slave 11.9 and 13 mA
CC2560A NRND; CC2564 NRND
11
CC2560A, CC2560B, CC2564, CC2564B
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SpecificationsCopyright © 2012–2016, Texas Instruments Incorporated
5.5.2.2 Current Consumption for Different LE Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz fast clock, nominal unit, 10-dBm output power
MODE DESCRIPTION AVERAGE
CURRENT UNIT
Advertising, nonconnectable Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data 114 µA
Advertising, discoverable Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data 138 µA
Scanning Listening to a single frequency per window
1.28-seconds scan interval
11.25-ms scan window 324 µA
Connected Master role 500-ms connection interval
0-ms slave connection latency
Empty TX and RX LL packets
169 µA
Slave role 199
5.6 Electrical Characteristics
RATING CONDITION MIN MAX UNIT
High-level output voltage, VOH At 2, 4, 8 mA 0.8 x VDD_IO VDD_IO V
At 0.1 mA VDD_IO 0.2 VDD_IO
Low-level output voltage, VOL At 2, 4, 8 mA 0 0.2 x VDD_IO V
At 0.1 mA 0 0.2
I/O input impedance Resistance 1 M
Capacitance 5 pF
Output rise and fall times, 10% to 90% (digital pins) CL= 20 pF 10 ns
I/O pull currents PCM-I2S bus, TX_DBG PU typ = 6.5 3.5 9.7
μA
PD typ = 27 9.5 55
All others PU typ = 100 50 300
PD typ = 100 50 360
nSHUTD
VDD_IO
HCI_RTS
20 ms max
20 µs max
FAST CLOCK
SLOW CLOCK
CC256x ready
VDD_IN
2 ms max
SWRS098-008
± 100 ms
Shut down
before
VDD_IO
removed
CC2560A NRND; CC2564 NRND
12
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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5.7 Timing and Switching Characteristics
5.7.1 Device Power Supply
The CC256x power-management hardware and software algorithms provide significant power savings,
which is a critical parameter in an MCU-based system.
The power-management module is optimized for drawing extremely low currents.
5.7.1.1 Power Sources
The CC256x device requires two power sources:
VDD_IN: main power supply for the device
VDD_IO: power source for the 1.8-V I/O ring
The HCI module includes several on-chip voltage regulators for increased noise immunity and can be
connected directly to the battery.
5.7.1.2 Device Power-Up and Power-Down Sequencing
The device includes the following power-up requirements (see Figure 5-1):
nSHUTD must be low. VDD_IN and VDD_IO are don't-care when nSHUTD is low. However, signals
are not allowed on the I/O pins if I/O power is not supplied, because the I/Os are not fail-safe.
Exceptions are SLOW_CLK_IN and AUD_xxx, which are fail-safe and can tolerate external voltages
with no VDD_IO and VDD_IN.
VDD_IO and VDD_IN must be stable before releasing nSHUTD.
The fast clock must be stable within 20 ms of nSHUTD going high.
The slow clock must be stable within 2 ms of nSHUTD going high.
The device indicates that the power-up sequence is complete by asserting RTS low, which occurs up to
100 ms after nSHUTD goes high. If RTS does not go low, the device is not powered up. In this case,
ensure that the sequence and requirements are met.
Figure 5-1. Power-Up and Power-Down Sequence
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(1) The terms None or Asserted can imply any of the following conditions: directly pulled to ground or driven low, pulled to ground through a
pulldown resistor, or left NC or floating (high-impedance output stage).
5.7.1.3 Power Supplies and Shutdown Static States
The nSHUTD signal puts the device in ultra-low power mode and performs an internal reset to the device.
The rise time for nSHUTD must not exceed 20 μs; nSHUTD must be low for a minimum of 5 ms.
To prevent conflicts with external signals, all I/O pins are set to the high-impedance (Hi-Z) state during
shutdown and power up of the device. The internal pull resistors are enabled on each I/O pin, as
described in Section 4.1,Pin Attributes.Table 5-1 describes the static operation states.
Table 5-1. Power Modes
VDD_IN (1) VDD_IO(1) nSHUTD(1) PM_MODE COMMENTS
1 None None Asserted Shut down I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
2 None None Deasserted Not allowed I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
3 None Present Asserted Shut down I/Os are defined as 3-state with internal
pullup or pulldown enabled.
4 None Present Deasserted Not allowed I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
5 Present None Asserted Shut down I/O state is undefined.
6 Present None Deasserted Not allowed I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
7 Present Present Asserted Shut down I/Os are defined as 3-state with internal
pullup or pulldown enabled.
8 Present Present Deasserted Active See Section 5.7.1.4,I/O States in
Various Power Modes
(1) I = input, O = output, Z = Hi-Z, = no pull, PU = pullup, PD = pulldown, H = high, L = low
5.7.1.4 I/O States in Various Power Modes
CAUTION
Some device I/Os are not fail-safe (see Section 4.1, Pin Attributes). Fail-safe
means that the pins do not draw current from an external voltage applied to the
pin when I/O power is not supplied to the device. External voltages are not
allowed on these I/O pins when the I/O supply voltage is not supplied because
of possible damage to the device.
Table 5-2 lists the I/O states in various power modes.
Table 5-2. I/O States in Various Power Modes
I/O NAME SHUT DOWN(1) DEFAULT ACTIVE(1) DEEP SLEEP(1)
I/O State Pull I/O State Pull I/O State Pull
HCI_RX Z PU I PU I PU
HCI_TX Z PU O-H O
HCI_RTS Z PU O-H O
HCI_CTS Z PU I PU I PU
AUD_CLK Z PD I PD I PD
AUD_FSYNC Z PD I PD I PD
AUD_IN Z PD I PD I PD
AUD_OUT Z PD Z PD Z PD
TX_DBG Z PU O
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(1) An internal pulldown retains shut-down mode when no external signal is applied to this pin.
5.7.1.5 nSHUTD Requirements
PARAMETER SYM MIN MAX UNIT
Operation mode level (1) VIH 1.42 1.98 V
Shutdown mode level (1) VIL 0 0.4 V
Minimum time for nSHUT_DOWN low to reset the device 5 ms
Rise and fall times trand tf20 μs
5.7.2 Clock Specifications
5.7.2.1 Slow Clock Requirements
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 to 1.8 V. The
accuracy of the slow clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
space
CHARACTERISTICS CONDITION SYM MIN TYP MAX UNIT
Input slow clock frequency 32768 Hz
Input slow clock accuracy
(Initial + temp + aging) Bluetooth ±250 ppm
ANT ±50
Input transition time trand tf
(10% to 90%) trand tf200 ns
Frequency input duty cycle 15% 50% 85%
Slow clock input voltage limits Square wave, DC-coupled VIH 0.65 ×
VDD_IO VDD_IO V peak
VIL 0 0.35 ×
VDD_IO V peak
Input impedance 1 M
Input capacitance 5 pF
5.7.2.2 External Fast Clock Crystal Requirements and Operation
CHARACTERISTICS CONDITION SYM MIN TYP MAX UNIT
Supported crystal frequencies fin 26, 38.4 MHz
Frequency accuracy
(Initial + temperature + aging) ±20 ppm
Crystal oscillator negative resistance
26 MHz, external capacitance = 8 pF 650 940
Iosc = 0.5 mA
26 MHz, external capacitance = 20 pF 490 710
Iosc = 2.2 mA
5.7.2.3 Fast Clock Source Requirements (–40°C to +85°C)
CHARACTERISTICS CONDITION SYM MIN TYP MAX UNIT
Supported frequencies FREF 26, 38.4 MHz
Reference frequency accuracy Initial + temp + aging ±20 ppm
Fast clock input voltage limits Square wave, DC-coupled VIL –0.2 0.37 V
VIH 1.0 2.1 V
Sine wave, AC-coupled 0.4 1.6 Vp-p
Sine wave, DC-coupled 0.4 1.6 Vp-p
Sine wave input limits, DC-coupled 0.0 1.6 V
TX STR D0 D1 D2 Dn PAR STP
tb
td_uart_swrs064
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CHARACTERISTICS CONDITION SYM MIN TYP MAX UNIT
Fast clock input rise time
(as % of clock period) Square wave, DC-coupled 10%
Duty cycle 35% 50% 65%
Phase noise for 26 MHz @ offset = 1 kHz –123.4 dBc/Hz
@ offset = 10 kHz –133.4
@ offset = 100 kHz –138.4
5.7.3 Peripherals
5.7.3.1 UART
Figure 5-2 shows the UART timing diagram.
Figure 5-2. UART Timing
Table 5-3 lists the UART timing characteristics.
Table 5-3. UART Timing Characteristics
SYMBOL CHARACTERISTICS CONDITION MIN TYP MAX UNIT
Baud rate 37.5 4000 kbps
Baud rate accuracy per byte Receive and transmit –2.5% 1.5%
Baud rate accuracy per bit Receive and transmit –12.5% 12.5%
t3 CTS low to TX_DATA on 0 2 μs
t4 CTS high to TX_DATA off Hardware flow control 1 byte
t6 CTS-high pulse width 1 bit
t1 RTS low to RX_DATA on 0 2 μs
t2 RTS high to RX_DATA off Interrupt set to 1/4 FIFO 16 byte
Figure 5-3 shows the UART data frame.
Figure 5-3. Data Frame
Table 5-4 describes the symbols used in Figure 5-3.
AUD_CLK
AUD_OUT / FSYNC_OUT
AUD_IN / FSYNC_IN
tih
top
tis
Tclk Tw
td_aud_swrs064
Tw
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Table 5-4. Data Frame Key
SYMBOL DESCRIPTION
STR Start bit
D0...Dn Data bits (LSB first)
PAR Parity bit (optional)
STP Stop bit
5.7.3.2 PCM
Figure 5-4 shows the interface timing for the PCM.
Figure 5-4. PCM Interface Timing
Table 5-5 lists the associated PCM master parameters.
Table 5-5. PCM Master
Symbol PARAMETER CONDITION MIN MAX UNIT
Tclk Cycle time 244.14
(4.096 MHz) 15625
(64 kHz) ns
TwHigh or low pulse width 50% of Tclk min ns
tis AUD_IN setup time 25 ns
tih AUD_IN hold time 0 ns
top AUD_OUT propagation time 40-pF load 0 10 ns
top FSYNC_OUT propagation time 40-pF load 0 10 ns
Table 5-6 lists the associated PCM slave parameters.
Table 5-6. PCM Slave
SYMBOL PARAMETER CONDITION MIN MAX UNIT
Tclk Cycle time 66.67
(15 MHz) ns
TwHigh or low pulse width 40% of Tclk ns
Tis AUD_IN setup time 8 ns
Tih AUD_IN hold time 0 ns
tis AUD_FSYNC setup time 8 ns
tih AUD_FSYNC hold time 0 ns
top AUD_OUT propagation time 40-pF load 0 21 ns
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(1) Sensitivity degradation up to 3 dB may occur for minimum and typical values where the Bluetooth frequency is a harmonic of the fast
clock.
(2) Numbers show ratio of desired signal to interfering signal. Smaller numbers indicate better C/I performance.
5.7.4 RF Performance
5.7.4.1 Bluetooth BR/EDR RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL under a
temperature range from –20°C to 70°C and an RF load of 50 Ωat the BT_RF port.
5.7.4.1.1 Bluetooth Receiver—In-Band Signals
CHARACTERISTICS CONDITION MIN TYP MAX BLUETOOTH
SPECIFICATION UNIT
Operation frequency range 2402 2480 MHz
Channel spacing 1 MHz
Input impedance 50
Sensitivity, dirty TX on(1) GFSK, BER = 0.1% –91.5 –95 –70
dBmPi/4-DQPSK, BER = 0.01% –90.5 –94.5 –70
8DPSK, BER = 0.01% 81 –87.5 –70
BER error floor at sensitivity +
10dB, dirty TX off Pi/4-DQPSK 1E–6 1E–7 1E–5
8DPSK 1E–6 1E–5
Maximum usable input power GFSK, BER = 0.1% –5 –20
dBmPi/4-DQPSK, BER = 0.1% –10
8DPSK, BER = 0.1% –10
Intermodulation characteristics Level of interferers (for n = 3, 4, and 5) –36 –30 –39 dBm
C/I performance(2) GFSK, co-channel 8 10 11
dB
EDR, co-channel Pi/4-DQPSK 9.5 11 13
Image = –1 MHz 8DPSK 16.5 20 21
GFSK, adjacent ±1 MHz –10 –5 0
EDR, adjacent ±1 MHz, (image) Pi/4-DQPSK –10 –5 0
8DPSK –5 –1 5
GFSK, adjacent +2 MHz 38 –35 –30
EDR, adjacent, +2 MHz Pi/4-DQPSK –38 35 –30
8DPSK –38 –30 –25
GFSK, adjacent –2 MHz –28 20 –20
EDR, adjacent –2 MHz Pi/4-DQPSK –28 –20 –20
8DPSK –22 –13 –13
GFSK, adjacent |±3| MHz –45 –43 –40
EDR, adjacent |±3| MHz Pi/4-DQPSK –45 –43 –40
8DPSK –44 –36 –33
RF return loss –10 dB
RX mode LO leakage Frf = (received RF 0.6 MHz) –63 58 dBm
(1) Exceptions are taken out of the total 24 allowed in the Bluetooth specification.
5.7.4.1.2 Bluetooth Receiver—General Blocking
CHARACTERISTICS CONDITION MIN TYP UNIT
Blocking performance over full range, according to Bluetooth
specification (1) 30 to 2000 MHz –6
dBm
2000 to 2399 MHz –6
2484 to 3000 MHz –6
3 to 12.75 GHz –6
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(1) To modify maximum output power, use an HCI VS command.
5.7.4.1.3 Bluetooth Transmitter—GFSK
CHARACTERISTICS MIN TYP MAX BLUETOOTH
SPECIFICATION UNIT
Maximum RF output power(1) 10 12 dBm
Power variation over Bluetooth band –1 1 dB
Gain control range 30 dB
Power control step 2 5 8 2 to 8
Adjacent channel power |M–N| = 2 –45 –39 –20 dBm
Adjacent channel power |M–N| > 2 –50 –42 –40
(1) To modify maximum output power, use an HCI VS command.
(2) Assumes 3-dB insertion loss from Bluetooth RF ball to antenna
5.7.4.1.4 Bluetooth Transmitter—EDR
CHARACTERISTICS MIN TYP MAX BLUETOOTH
SPECIFICATI
ON
UNIT
Maximum RF output
power(1) Pi/4-DQPSK 6 8 dBm
8DPSK 6 8
Relative power –2 1 –4 to +1 dB
Power variation over Bluetooth band –1 1 dB
Gain control range 30 dB
Power control step 2 5 8 2 to 8 dB
Adjacent channel power |M–N| = 1 –36 –30 –26 dBc
Adjacent channel power |M–N| = 2 (2) –30 –23 –20 dBm
Adjacent channel power |M–N| > 2 (2) –42 –40 –40 dBm
5.7.4.1.5 Bluetooth Modulation—GFSK
CHARACTERISTICS CONDITION SYM MIN TYP MAX BLUETOOTH
SPECIFICATION UNIT
–20 dB bandwidth GFSK 925 995 1000 kHz
Modulation characteristics Δf1avg Mod data = 4 1 s,
4 0 s:
111100001111...
F1 avg 150 165 170 140 to 175 kHz
Δf2max limit for
at least 99.9% of
all Δf2max
Mod data =
1010101... F2 max 115 130 > 115 kHz
Δf2avg, Δf1avg 85% 88% > 80%
Absolute carrier frequency drift DH1 –25 25 < ±25 kHz
DH3 and DH5 –35 35 < ±40
Drift rate 15 < 20 kHz/
50 μs
Initial carrier frequency tolerance f0 fTX –75 +75 < ±75 kHz
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(1) Max performance refers to maximum TX power.
5.7.4.1.6 Bluetooth Modulation—EDR
CHARACTERISTICS CONDITION MIN TYP MAX BLUETOOTH
SPECIFICATION UNIT
Carrier frequency stability ±5 10 kHz
Initial carrier frequency tolerance ±75 ±75 kHz
RMS DEVM (1) Pi/4-DQPSK 6% 15% 20%
8DPSK 6% 13% 13%
99% DEVM(1) Pi/4-DQPSK 30% 30%
8DPSK 20% 20%
Peak DEVM (1) Pi/4-DQPSK 14% 30% 35%
8DPSK 16% 25% 25%
(1) Meets FCC and ETSI requirements with external filter shown in Figure 7-1
5.7.4.1.7 Bluetooth Transmitter—Out-of-Band and Spurious Emissions
CHARACTERISTICS CONDITION TYP MAX UNIT
Second harmonic(1)
Measured at maximum output power –14 –2 dBm
Third harmonic(1) –10 –6 dBm
Fourth harmonics(1) –19 –11 dBm
(1) Sensitivity degradation up to 3 dB may occur where the BLE frequency is a harmonic of the fast clock.
(2) Numbers show wanted signal-to-interfering signal ratio. Smaller numbers indicate better C/I performance.
5.7.4.2 Bluetooth LE RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL under a
temperature range from –20°C to 70°C and an RF load of 50 Ωat the BT_RF port.
5.7.4.2.1 BLE Receiver—In-Band Signals
CHARACTERISTIC CONDITION MIN TYP MAX BLE
SPECIFICATION UNIT
Operation frequency range 2402 2480 MHz
Channel spacing 2 MHz
Input impedance 50
Sensitivity, dirty TX on(1) PER = 30.8%; dirty TX on –93 –96 –70 dBm
Maximum usable input power GMSK, PER = 30.8% –5 –10 dBm
Intermodulation characteristics Level of interferers
(for n = 3, 4, 5) –36 –30 –50 dBm
C/I performance(2)
Image = –1 MHz GMSK, co-channel 8 12 21
dB
GMSK, adjacent ±1 MHz –5 0 15
GMSK, adjacent +2 MHz –45 –38 –17
GMSK, adjacent –2 MHz –22 15 –15
GMSK, adjacent |±3| MHz –47 –40 –27
RX mode LO leakage Frf = (received RF 0.6 MHz) –63 –58 dBm
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(1) Exceptions are taken out of the total 10 allowed in the BLE specification.
5.7.4.2.2 BLE Receiver—General Blocking
CHARACTERISTICS CONDITION MIN TYP BLE SPECIFICATION UNIT
Blocking performance over full
range, according to BLE
specification(1)
30 to 2000 MHz –15 –30
dBm
2000 to 2399 MHz 15 35
2484 to 3000 MHz 15 35
3 to 12.75 GHz –15 –30
(1) To modify maximum output power, use an HCI VS command.
(2) To achieve the BLE specification of 10-dBm maximum, an insertion loss of > 2 dB is assumed between the RF ball and the antenna.
Otherwise, use an HCI VS command to modify the output power.
5.7.4.2.3 BLE Transmitter
CHARACTERISTICS MIN TYP MAX BLE
SPECIFICATION UNIT
Maximum RF output power(1) 10 12(2) 10 dBm
Power variation over BLE band –1 1 dB
Adjacent channel power |M-N| = 2 –45 –39 –20 dBm
Adjacent channel power |M-N| > 2 –50 –42 –30
5.7.4.2.4 BLE Modulation
CHARACTERISTICS CONDITION SYM MIN TYP MAX BLE
SPEC. UNIT
Modulation characteristics Δf1avg Mod data = 4 1s,
4 0 s:
1111000011110000...
Δf1
avg 240 250 260 225 to 275 kHz
Δf2max limit for at least
99.9% of all Δf2max Mod data = 1010101... Δf2
max 185 210 185 kHz
Δf2avg, Δf1avg 0.85 0.9 0.8
Absolute carrier frequency
drift –25 25 ±50 kHz
Drift rate 15 20 kHz/50
ms
Initial carrier frequency
tolerance –75 75 ±100 kHz
5.7.4.2.5 BLE Transceiver, Out-Of-Band and Spurious Emissions
See Section 5.7.4.1.7,Bluetooth Transmitter, Out-of-Band and Spurious Emissions.
PCM/I2S
UART
CC256x
I/O
interface
Coprocessor
(See Note)
BR/EDR
main processor
Modem
arbitrator DRP
Power
management
Clock
management
Power Shutdown Slow
clock
Fast
clock
2.4-GHz
band pass filter
SWRS121-001
HCI
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Detailed DescriptionCopyright © 2012–2016, Texas Instruments Incorporated
6 Detailed Description
6.1 Overview
The CC256x architecture comprises a DRP™ and a point-to-multipoint baseband core. The architecture is
based on a single-processor ARM7TDMIE®core. The device includes several on-chip peripherals to
enable easy communication with a host system and the Bluetooth BR/EDR/LE core.
6.2 Functional Block Diagram
Note: The following technologies and assisted modes cannot be used simultaneously with the coprocessor: Bluetooth
LE, ANT, assisted HFP 1.6 (WBS), and assisted A2DP. One and only one technology or assisted mode can be used
at a time.
Figure 6-1. CC256x Functional Block Diagram
6.3 Clock Inputs
This section describes the available clock inputs. For specifications, see Section 5.7.2,Clock
Specifications.
6.3.1 Slow Clock
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 to 1.8 V. The
accuracy of the slow clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
6.3.2 Fast Clock Using External Clock Source
An external clock source is fed to an internal pulse-shaping cell to provide the fast-clock signal for the
device. The device incorporates an internal, automatic clock-scheme detection mechanism that
automatically detects the fast-clock scheme used and configures the FREF cell accordingly. This
mechanism ensures that the electrical characteristics (loading) of the fast-clock input remain static
regardless of the scheme used and eliminates any power-consumption penalty-versus-scheme used.
The frequency variation of the fast-clock source must not exceed ±20 ppm (as defined by the Bluetooth
specification).
The external clock can be AC- or DC-coupled, sine or square wave.
FREFP
FREFM
CC256x
VDD_IO
SWRS121-007
–0.2
V [V]
Fref
Vhigh_min
t
2.1
1.0
Vlow_max
0.37
clksqtd_wrs064
FREFP
FREFM
CC256x
SWRS121-009
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6.3.2.1 External FREF DC-Coupled
Figure 6-2 and Figure 6-3 show the clock configuration when using a square wave, DC-coupled external
source for the fast clock input.
NOTE
A shunt capacitor with a range of 10 nF must be added on the oscillator output to reject high
harmonics and shape the signal to be close to a sinusoidal waveform.
TI recommends using only a dedicated LDO to feed the oscillator. Do not use the same VIO
for the oscillator and the CC256x device.
Figure 6-2. Clock Configuration (Square Wave, DC-Coupled)
Figure 6-3. External Fast Clock (Square Wave, DC-Coupled)
Figure 6-4 and Figure 6-5 show the clock configuration when using a sine wave, DC-coupled external
source for the fast clock input.
Figure 6-4. Clock Configuration (Sine Wave, DC-Coupled)
t
1 V
0.8
0.2
0
–0.2
–0.8
V [V]
IN
VPP = 0.4 1.6 Vp-p
SWRS097-022
FREFP
FREFM
CC256x
VDD_IO
SWRS121-008
68 pF
t
VIN
1.6 V
0
V = 0.2 1.4 V
dc
VPP = 0.4 1.6 Vp-p
SWRS097-023
CC2560A NRND; CC2564 NRND
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Figure 6-5. External Fast Clock (Sine Wave, DC-Coupled)
6.3.2.2 External FREF Sine Wave, AC-Coupled
Figure 6-6 and Figure 6-7 show the configuration when using a sine wave, AC-coupled external source for
the fast-clock input.
Figure 6-6. Clock Configuration (Sine Wave, AC-Coupled)
Figure 6-7. External Fast Clock (Sine Wave, AC-Coupled)
In cases where the input amplitude is greater than 1.6 Vp-p, the amplitude can be reduced to within limits.
Using a small series capacitor forms a voltage divider with the internal input capacitance of approximately
2 pF to provide the required amplitude at the device input.
TX digital data
RX digital data
Digital
Demodulation
Amplitude
Phase ADPLL
Filter
ADC IFA LNA
Transmitter path
Receiver path
SWRS092-005
DPA
Oscillator
buffer
CC256x
XTALM
XTALP
XTAL
C1
C2
SWRS098-003
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6.3.2.3 Fast Clock Using External Crystal
The CC256x device incorporates an internal crystal oscillator buffer to support a crystal-based fast-clock
scheme. The supported crystal frequencies are 26 and 38.4 MHz.
The frequency accuracy of the fast clock source must not exceed ±20 ppm (including the accuracy of the
capacitors, as specified in the Bluetooth specification).
Figure 6-8 shows the recommended fast-clock circuitry.
Figure 6-8. Fast-Clock Crystal Circuit
Table 6-1 lists component values for the fast-clock crystal circuit.
(1) To achieve the required accuracy, values for C1 and C2 must be
taken from the crystal manufacturer's data sheet and layout
considerations.
Table 6-1. Fast-Clock Crystal Circuit Component
Values
FREQ (MHz) C1 (pF)(1) C2 (pF)(1)
26 12 12
6.4 Functional Blocks
6.4.1 RF
The device is the third generation of TI Bluetooth single-chip devices using DRP architecture.
Modifications and new features added to the DRP further improve radio performance.
Figure 6-9 shows the DRP block diagram.
Figure 6-9. DRP Block Diagram
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6.4.1.1 Receiver
The receiver uses near-zero-IF architecture to convert the RF signal to baseband data. The signal
received from the external antenna is input to a single-ended low-noise amplifier (LNA) and passed to a
mixer that downconverts the signal to IF, followed by a filter and amplifier. The signal is then quantized by
a sigma-delta analog-to-digital converter (ADC) and further processed to reduce the interference level.
The demodulator digitally downconverts the signal to zero-IF and recovers the data stream using an
adaptive-decision mechanism. The demodulator includes EDR processing with:
State-of-the-art performance
A maximum-likelihood sequence estimator (MLSE) to improve the performance of basic-rate GFSK
sensitivity
Adaptive equalization to enhance EDR modulation
New features include:
LNA input range narrowed to increase blocking performance
Active spur cancellation to increase robustness to spurs
6.4.1.2 Transmitter
The transmitter is an all-digital, sigma-delta phase-locked loop (ADPLL) based with a digitally controlled
oscillator (DCO) at 2.4 GHz as the RF frequency clock. The transmitter directly modulates the digital PLL.
The power amplifier is also digitally controlled. The transmitter uses the polar-modulation technique. While
the phase-modulated control word is fed to the ADPLL, the amplitude-modulated controlled word is fed to
the class-E amplifier to generate a Bluetooth standard-compliant RF signal.
New features include:
Improved TX output power
LMS algorithm to improve the differential error vector magnitude (DEVM)
6.4.2 Host Controller Interface
The CC256x device incorporates one UART module dedicated to the HCI transport layer. The HCI
interface transports commands, events, and ACL between the device and the host using HCI data
packets.
All members of the CC256x family supand port the H4 protocol (4-wire UART) with hardware flow control.
The CC2560B and CC2564B devices also support the H5 protocol (3-wire UART) with software flow
control. The CC256x device automatically detects the protocol when it receives the first command.
The maximum baud rate of the UART module is 4 Mbps; however, the default baud rate after power up is
set to 115.2 kbps. The baud rate can thereafter be changed with a VS command. The device responds
with a command complete event (still at 115.2 kbps), after which the baud rate change occurs.
The UART module includes the following features:
Receiver detection of break, idle, framing, FIFO overflow, and parity error conditions
Transmitter underflow detection
CTS and RTS hardware flow control (H4 protocol)
XON and XOFF software flow control (H5 protocol)
Table 6-2 lists the UART module default settings.
Table 6-2. UART Module Default Settings
PARAMETER VALUE
Bit rate 115.2 kbps
Data length 8 bits
Host CC256x
Host_RX
Host_TX
HCI_RX
HCI_TX
SWRS121-015
GND GND
Host CC256x
Host_RX
Host_TX
Host_CTS
Host_RTS
HCI_RX
HCI_TX
HCI_CTS
HCI_RTS
SWRS121-003
CC2560A NRND; CC2564 NRND
26
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Table 6-2. UART Module Default Settings (continued)
PARAMETER VALUE
Stop bit 1
Parity None
6.4.2.1 4-Wire UART Interface—H4 Protocol
The H4 UART Interface includes four signals:
TX
RX
CTS
RTS
Flow control between the host and the CC256x device is bytewise by hardware.
Figure 6-10 shows the H4 UART interface.
Figure 6-10. H4 UART Interface
When the UART RX buffer of the device passes the flow control threshold, it sets the HCI_RTS signal
high to stop transmission from the host.
When the HCI_CTS signal is set high, the device stops transmission on the interface. If HCI_CTS is set
high while transmitting a byte, the device finishes transmitting the byte and stops the transmission.
The H4 protocol device includes a mechanism that handles the transition between active mode and sleep
mode. The protocol occurs through the CTS and RTS UART lines and is known as the enhanced HCI low
level (eHCILL) power-management protocol.
For more information on the H4 UART protocol, see Volume 4 Host Controller Interface, Part A UART
Transport Layer of the Bluetooth Core Specifications (www.bluetooth.org/en-
us/specification/adoptedspecifications).
6.4.2.2 3-Wire UART Interface—H5 Protocol (CC2560B and CC2564B Devices)
The H5 UART interface consists of three signals (see Figure 6-11):
TX
RX
GND
Figure 6-11. H5 UART Interface
The H5 protocol supports the following features:
Software flow control (XON/XOFF)
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Power management using the software messages:
WAKEUP
WOKEN
SLEEP
CRC data integrity check
For more information on the H5 UART protocol, see Volume 4 Host Controller Interface, Part D Three-
Wire UART Transport Layer of the Bluetooth Core Specifications (www.bluetooth.org/en-
us/specification/adoptedspecifications).
6.4.3 Digital Codec Interface
The codec interface is a fully programmable port to support seamless interfacing with different PCM and
I2S codec devices. The interface includes the following features:
Two voice channels
Master and slave modes
All voice coding schemes defined by the Bluetooth specification: linear, A-Law, and μ-Law
Long and short frames
Different data sizes, order, and positions
High flexibility to support a variety of codecs
Bus sharing: Data_Out is in Hi-Z state when the interface is not transmitting voice data.
6.4.3.1 Hardware Interface
The interface includes four signals:
Clock: configurable direction (input or output)
Frame_Sync and Word_Sync: configurable direction (input or output)
Data_In: input
Data_Out: output or 3-state
The CC256x device can be the master of the interface when generating the Clock and Frame_Sync
signals or the slave when receiving these two signals.
For slave mode, clock input frequencies of up to 15 MHz are supported. At clock rates above 12 MHz, the
maximum data burst size is 32 bits.
For master mode, the device can generate any clock frequency between 64 kHz and 4.096 MHz.
6.4.3.2 I2S
When the codec interface is configured to support the I2S protocol, these settings are recommended:
Bidirectional, full-duplex interface
Two time slots per frame: time slot-0 for the left channel audio data; and time slot-1 for the right
channel audio data
Each time slot is configurable up to 40 serial clock cycles long, and the frame is configurable up to 80
serial clock cycles long.
6.4.3.3 Data Format
The data format is fully configurable:
The data length can be from 8 to 320 bits in 1-bit increments when working with 2 channels, or up to
640 bits when working with 1 channel. The data length can be set independently for each channel.
The data position within a frame is also configurable within 1 clock (bit) resolution and can be set
independently (relative to the edge of the Frame_Sync signal) for each channel.
Clock
Data_In
Frame_Sync
Frame period
Data_Out
Frame idle
Clk_Idle_Start
Clk_Idle_End
frmidle_swrs064
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The Data_In and Data_Out bit order can be configured independently. For example; Data_In can start
with the most significant bit (MSB); Data_Out can start with the least significant bit (LSB). Each
channel is separately configurable. The inverse bit order (that is, LSB first) is supported only for
sample sizes up to 24 bits.
Data_In and Data_Out are not required to be the same length.
The Data_Out line is configured to Hi-Z output between data words. Data_Out can also be set for
permanent Hi-Z, regardless of the data output. This configuration allows the device to be a bus slave in
a multislave PCM environment. At power up, Data_Out is configured as Hi-Z.
6.4.3.4 Frame Idle Period
The codec interface handles frame idle periods, in which the clock pauses and becomes 0 at the end of
the frame, after all data are transferred.
The device supports frame idle periods both as master and slave of the codec bus.
When the device is the master of the interface, the frame idle period is configurable. There are two
configurable parameters:
Clk_Idle_Start: indicates the number of clock cycles from the beginning of the frame to the beginning of
the idle period. After Clk_Idle_Start clock cycles, the clock becomes 0.
Clk_Idle_End: indicates the time from the beginning of the frame to the end of the idle period. The time
is given in multiples of clock periods.
The delta between Clk_Idle_Start and Clk_Idle_End is the clock idle period.
For example, for clock rate = 1 MHz, frame sync period = 10 kHz, Clk_Idle_Start = 60, Clk_Idle_End = 90.
Between both Frame_Sync signals there are 70 clock cycles (instead of 100). The clock idle period starts
60 clock cycles after the beginning of the frame and lasts 90 60 = 30 clock cycles. Thus, the idle period
ends 100 90 = 10 clock cycles before the end of the frame. The data transmission must end before the
beginning of the idle period.
Figure 6-12 shows the frame idle timing.
Figure 6-12. Frame Idle Period
6.4.3.5 Clock-Edge Operation
The codec interface of the device can work on the rising or the falling edge of the clock and can sample
the Frame_Sync signal and the data at inversed polarity.
...
Fsync
Data_Out
Data_In
...
Clock
FT
MSB LSB MSB LSB
PCM_data_window
CH1 data start FT = 0 CH1 data length = 11 CH2 data
start FT = 43
CH2 data
length = 8
Fsync period = 128
Fsync length = 1
...
...
...
...
twochpcm_swrs064
98
7
6
5
4
3
2
1
0
127 42 43 44 0
127
bit
0
bit
1
bit
2
bit
3
bit
4
bit
5
bit
6
bit
7
bit
8
bit
9
bit
10
bit
0
bit
1
bit
2
bit
3
bit
4
bit
5
bit
6
bit
7
bit
0
bit
1
bit
2
bit
3
bit
4
bit
5
bit
6
bit
7
bit
8
bit
9
bit
10
bit
0
bit
1
bit
2
bit
3
bit
4
bit
5
bit
6
bit
7
PCM FSYNC
CC256x
SAMPLE TIME
PCM DATA IN
PCM CLK
D7 D3
D5 D4 D2 D1 D0D6
SWRS121-004
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Figure 6-13 shows the operation of a falling-edge-clock type of codec. The codec is the master of the bus.
The Frame_Sync signal is updated (by the codec) on the falling edge of the clock and is therefore
sampled (by the device) on the next rising clock. The data from the codec is sampled (by the device) on
the falling edge of the clock.
Figure 6-13. Negative Clock Edge Operation
6.4.3.6 Two-Channel Bus Example
Figure 6-14 shows a 2-channel bus in which the two channels have different word sizes and arbitrary
positions in the bus frame. (FT stands for frame timer.)
Figure 6-14. 2-Channel Bus Timing
6.4.3.7 Improved Algorithm For Lost Packets
The device features an improved algorithm to improve voice quality when received voice data packets are
lost. There are two options:
Repeat the last sample: possible only for sample sizes up to 24 bits. For sample sizes larger than 24
bits, the last byte is repeated.
Repeat a configurable sample of 8 to 24 bits (depending on the real sample size) to simulate silence
(or anything else) in the bus. The configured sample is written in a specific register for each channel.
The choice between those two options is configurable separately for each channel.
6.4.3.8 Bluetooth and Codec Clock Mismatch Handling
In Bluetooth RX, the device receives RF voice packets and writes them to the codec interface. If the
device receives data faster than the codec interface output allows, an overflow occurs. In this case, the
Bluetooth RX has two possible modes of behavior:
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Allow overflow: if overflow is allowed, the Bluetooth RX continues receiving data and overwrites any
data not yet sent to the codec.
Do not allow overflow: if overflow is not allowed, RF voice packets received when the buffer is full are
discarded.
6.4.4 Assisted Modes (CC2560B and CC2564B Devices)
The CC256x device contains an embedded coprocessor that can be used for multiple purposes (see
Figure 1-1). The CC2564 and CC2564B devices use the coprocessor to perform the LE or ANT
functionality. The CC256x device uses the coprocessor to execute the assisted HFP 1.6 (WBS) or
assisted A2DP functions. Only one of these functions can be executed at a time because they all use the
same resources (that is, the coprocessor; see Table 3-1 for the modes of operation supported by each
device).
This section describes the assisted HFP 1.6 (WBS) and assisted A2DP modes of operation in the CC256x
device. These modes of operation minimize host processing and power by taking advantage of the device
coprocessor to perform the voice and audio SBC processing required in HFP 1.6 (WBS) and A2DP
profiles. This section also compares the architecture of the assisted modes with the common
implementation of the HFP 1.6 and A2DP profiles.
The assisted HFP 1.6 (WBS) and assisted A2DP modes of operation comply fully with the HFP 1.6 and
A2DP Bluetooth specifications. For more information on these profiles, see the corresponding Bluetooth
Profile Specification (www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.1 Assisted HFP 1.6 (WBS)
The HFP 1.6 Profile Specification adds the requirement for WBS support. The WBS feature allows twice
the voice quality versus legacy voice coding schemes at the same air bandwidth (64 kbps). This feature is
achieved using a voice sampling rate of 16 kHz, a modified subband coding (mSBC) scheme, and a
packet loss concealment (PLC) algorithm. The mSBC scheme is a modified version of the mandatory
audio coding scheme used in the A2DP profile with the parameters listed in Table 6-3.
Table 6-3. mSBC Parameters
PARAMETER VALUE
Channel mode Mono
Sampling rate 16 kHz
Allocation method Loudness
Subbands 8
Block length 15
Bitpool 26
The assisted HFP 1.6 mode of operation implements this WBS feature on the embedded CC256x
coprocessor. That is, the mSBC voice coding scheme and the PLC algorithm are executed in the CC256x
coprocessor rather than in the host, thus minimizing host processing and power. One WBS connection at
a time is supported and WBS and NBS connections cannot be used simultaneously in this mode of
operation. Figure 6-15 shows the architecture comparison between the common implementation of the
HFP 1.6 profile and the assisted HFP 1.6 solution.
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(1) Other settings: Block length = 16; allocation method = loudness; subbands = 8.
Figure 6-15. HFP 1.6 Architecture Versus Assisted HFP 1.6 Architecture
For detailed information on the HFP 1.6 profile, see the Hands-Free Profile 1.6 Specification
(www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.2 Assisted A2DP
The advanced audio distribution profile (A2DP) enables wireless transmission of high-quality mono or
stereo audio between two devices. A2DP defines two roles:
A2DP source is the transmitter of the audio stream.
A2DP sink is the receiver of the audio stream.
A typical use case streams music from a tablet, phone, or PC (the A2DP source) to headphones or
speakers (the A2DP sink). This section describes the architecture of these roles and compares them with
the corresponding assisted-A2DP architecture. To use the air bandwidth efficiently, the audio data must be
compressed in a proper format. The A2DP mandates support of the SBC scheme. Other audio coding
algorithms can be used; however, both Bluetooth devices must support the same coding scheme. SBC is
the only coding scheme spread out in all A2DP Bluetooth devices, and thus the only coding scheme
supported in the assisted A2DP modes. Table 6-4 lists the recommended parameters for the SBC scheme
in the assisted A2DP modes.
Table 6-4. Recommended Parameters for the SBC Scheme in Assisted A2DP Modes
SBC
ENCODER
SETTINGS(1)
MID QUALITY HIGH QUALITY
MONO JOINT STEREO MONO JOINT STEREO
Sampling
frequency
(kHz) 44.1 48 44.1 48 44.1 48 44.1 48
Bitpool value 19 18 35 33 31 29 53 51
Resulting
frame length
(bytes) 46 44 83 79 70 66 119 115
Resulting bit
rate (Kbps) 127 132 229 237 193 198 328 345
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The SBC scheme supports a wide variety of configurations to adjust the audio quality. Table 6-5 through
Table 6-12 list the supported SBC capabilities in the assisted A2DP modes.
Table 6-5. Channel Modes
CHANNEL MODE STATUS
Mono Supported
Dual channel Supported
Stereo Supported
Joint stereo Supported
Table 6-6. Sampling Frequency
SAMPLING FREQUENCY (kHz) STATUS
16 Supported
44.1 Supported
48 Supported
Table 6-7. Block Length
BLOCK LENGTH STATUS
4 Supported
8 Supported
12 Supported
16 Supported
Table 6-8. Subbands
SUBBANDS STATUS
4 Supported
8 Supported
Table 6-9. Allocation Method
ALLOCATION METHOD STATUS
SNR Supported
Loudness Supported
Table 6-10. Bitpool Values
BITPOOL RANGE STATUS
Assisted A2DP sink: 2–54 Supported
Assisted A2DP source: 2–57 Supported
Table 6-11. L2CAP MTU Size
L2CAP MTU SIZE (BYTES) STATUS
Assisted A2DP sink: 260–800 Supported
Assisted A2DP source: 260–1021 Supported
Table 6-12. Miscellaneous Parameters
ITEM VALUE STATUS
A2DP content protection Protected Not supported
AVDTP service Basic type Supported
Host Processor
Bluetooth Stack
CC256x
Bluetooth Controller
HCI
HCI
Control
A2DP
Profile
Audio
CODEC
Data
Control
44.1 KHz
48 KHz
A2DP Sink Architecture Assisted A2DP Sink Architecture
AVDTP
L2CAP
Data
16 bits
PCM
/
I2S
SBC
Host Processor
Bluetooth Stack
CC256x
Bluetooth Controller
HCI
HCI
Control
A2DP
Profile
Audio
CODEC
Data
Control
44.1 KHz
48 KHz
AVDTP
L2CAP
16 bits
PCM
/
I2S
SBC
L-AVDTP
L-L2CAP
CC2560A NRND; CC2564 NRND
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Table 6-12. Miscellaneous Parameters (continued)
ITEM VALUE STATUS
L2CAP mode Basic mode Supported
L2CAP flush Nonflushable Supported
For detailed information on the A2DP profile, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
6.4.4.2.1 Assisted A2DP Sink
The A2DP sink role is the receiver of the audio stream in an A2DP Bluetooth connection. In this role, the
A2DP layer and its underlying layers are responsible for link management and data decoding. To handle
these tasks, two logic transports are defined:
Control and signaling logic transport
Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC256x device by implementing a light L2CAP layer (L-L2CAP) and light AVDTP layer (L-AVDTP) to
defragment the packets. Then the assisted A2DP performs the SBC decoding on-chip to deliver raw audio
data through the CC256x PCM–I2S interface. Figure 6-16 shows the comparison between a common
A2DP sink architecture and the assisted A2DP sink architecture.
Figure 6-16. A2DP Sink Architecture Versus Assisted A2DP Sink Architecture
For more information on the A2DP sink role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
Host Processor
Bluetooth Stack
CC256x
Bluetooth Controller
HCI
HCI
Control
A2DP
Profile
Data
Control
44.1 KHz
48 KHz
A2DP Source Architecture Assisted A2DP Source Architecture
AVDTP
L2CAP
Data
16 bits
PCM
/
I2S
Host Processor
Bluetooth Stack
CC256x
Bluetooth Controller
HCI
HCI
Control
A2DP
Profile
Data
Control
44.1 KHz
48 KHz
AVDTP
L2CAP
16 bits
PCM
/
I2S
SBC
L-AVDTP
L-L2CAP
Audio
CODEC
SBC
Audio
CODEC
CC2560A NRND; CC2564 NRND
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6.4.4.2.2 Assisted A2DP Source
The role of the A2DP source is to transmit the audio stream in an A2DP Bluetooth connection. In this role,
the A2DP layer and its underlying layers are responsible for link management and data encoding. To
handle these tasks, two logic transports are defined:
Control and signaling logic transport
Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC256x device. First, the assisted A2DP encodes the raw data from the CC256x PCM–I2S interface
using an on-chip SBC encoder. The assisted A2DP then implements an L-L2CAP layer and an L-AVDTP
layer to fragment and packetize the encoded audio data. Figure 6-17 shows the comparison between a
common A2DP source architecture and the assisted A2DP source architecture.
Figure 6-17. A2DP Source Architecture Versus Assisted A2DP Source Architecture
For more information on the A2DP source role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
6.5 Bluetooth BR/EDR Features
The CC2564B/CC2560B devices fully comply with the Bluetooth 4.0 specification up to the HCI level. The
CC2560B/CC2564B devices are compliant with the Bluetooth 4.1 specification up to the HCI layer (for
family members and technology supported, see Table 3-1):
Up to seven active devices
Scatternet: Up to 3 piconets simultaneously, 1 as master and 2 as slaves
Up to two synchronous connection oriented (SCO) links on the same piconet
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Very fast AFH algorithm for asynchronous connection-oriented link (ACL) and extended SCO (eSCO)
link
Supports typical 12-dBm TX power without an external power amplifier (PA), thus improving Bluetooth
link robustness
Digital radio processor (DRP™) single-ended 50-ΩI/O for easy RF interfacing
Internal temperature detection and compensation to ensure minimal variation in RF performance over
temperature
Includes a 128-bit hardware encryption accelerator as defined by the Bluetooth specifications
Flexible pulse-code modulation (PCM) and inter-IC sound (I2S) digital codec interface:
Full flexibility of data format (linear, A-Law, μ-Law)
Data width
Data order
Sampling
Slot positioning
Master and slave modes
High clock rates up to 15 MHz for slave mode (or 4.096 MHz for master mode)
Support for all voice air-coding
CVSD
A-Law
μ-Law
Transparent (uncoded)
The CC2560B and CC2564B devices provide an assisted mode for the HFP 1.6 (wide-band speech
[WBS]) profile or A2DP profile to reduce host processing and power.
6.6 Bluetooth LE Description
The CC2564B device fully complies with the Bluetooth 4.0 specification up to the HCI level. The CC2564B
device is Bluetooth 4.1 specification compliant up to the HCI layer (for the family members and technology
supported, see Table 3-1):
Solution optimized for proximity and sports use cases
Supports up to 10 (CC2564B) simultaneous connections
Multiple sniff instances that are tightly coupled to achieve minimum power consumption
Independent buffering for LE, allowing large numbers of multiple connections without affecting BR/EDR
performance
Built-in coexistence and prioritization handling
NOTE
ANT and the assisted modes (HFP 1.6 and A2DP) are not available when BLE is enabled.
Data
Control Event
UART transport layer
RF
General
modules:
HCI vendor-
specific
Trace
Timers
Sleep
Host controller interface
HCI data handler HCI command handler
Link manager
Link controller
SWRS121-016
Data
Data
CC2560A NRND; CC2564 NRND
36
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6.7 Bluetooth Transport Layers
Figure 6-18 shows the Bluetooth transport layers.
Figure 6-18. Bluetooth Transport Layers
6.8 Changes from CC2560A and CC2564 to CC2560B and CC2564B Devices
The CC2560B and CC2564B devices include the following changes from the CC2560A and CC2564
devices:
From a hardware perspective, both devices are pin compatible. From a software perspective, each
device requires a different service pack. When operating with the two devices using the supported
Bluetooth stack, the devices are integrated seamlessly and use remains identical for each device.
Assisted mode for the HFP 1.6 (WBS) profile or the A2DP profile to enable more advanced features
without using host processing or power
Support for the H5 protocol in the UART transport layer using 2-wire UART
Enable 10 Bluetooth LE connections
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Applications, Implementation, and LayoutCopyright © 2012–2016, Texas Instruments Incorporated
7 Applications, Implementation, and Layout
Information in the following Applications section is not part of the TI component specification, and TI does
not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of
components for their purposes. Customers should validate and test their design implementation to confirm
system functionality.
7.1 Reference Design Schematics and BOM for Power and Radio Connections
Figure 7-1 shows the reference schematics for the CC256x device. Consult TI for complete schematics
and PCB layout guidelines.
Figure 7-1. Reference Schematics
Table 7-1 lists the BOM for the CC256x device.
Table 7-1. Bill of Materials
QTY REF.
DES. VALUE DESCRIPTION MFR MFR
PART NUMBER ALT. PART NOTES
1 ANT1 NA ANT_IIFA_CC2420_32mil_MIR NA IIFA_CC2420 Chip
antenna Copper antenna
on PCB
6 Capacitor 0.1 μF Capacitor, Ceramic; 0.1-µF
6.3-V 10% X7R 0402 Kemet C0402C104K9RACTU
2 Capacitor 1.0 μF Capacitor, Ceramic; 1.0-µF
6.3-V 10% X5R 0402 Taiyo Yuden JMK105BJ105KV-F
2 Capacitor 12 pF Capacitor, Ceramic; 12 pF
6.3-V X5R 10% 0402 Murata Electronics GRM1555C1H120JZ01D
2 Capacitor 0.47 μF Capacitor, Ceramic; 47-µF
6.3-V X5R ±10% 0402 Taiyo Yuden JMK105BJ474KV-F
1 FL1 2.45 GHz Filter, Ceramic Bandpass,
2.45-GHz SMD Murata Electronics LFB212G45SG8C341 DEA162450
BT_1260B3
(TDK)
Place brown
marking up
1 OSC1 32.768 kHz 15 pF Oscillator; 32.768-kHZ 15-pF
1.5-V 3.3-V SMD Abracon
Corporation ASH7K-32.768KHZ-T Optional
1 U5 CC2560BRVM,
CC2564BRVM CC256x Dual-Mode Bluetooth
Controller Texas Instruments CC256xRVM
1 Y1 26 MHz Crystal, 26 MHz NDK NX2016SA TZ1325D
(Tai-Saw
TST)
1 C31 22 pF Capacitor, Ceramic; 22-PF
25-V 5% NP0 0201 Murata Electronics
North America GRM0335C1E220JD01D
(EXS00A-CS06025)
CC2560A NRND; CC2564 NRND
38
CC2560A, CC2560B, CC2564, CC2564B
SWRS121E JULY 2012REVISED JANUARY 2016
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8 Device and Documentation Support
8.1 Device Support
8.1.1 Development Support
The following products support development of the CC256x device:
TI dual-mode Bluetooth stack on MSP430 MCUs
TI dual-mode Bluetooth stack on TM4C MCUs
TI dual-mode Bluetooth stack on STM32F4 MCUs
CC256x Bluetooth Hardware Evaluation Tool
For a complete listing of development-support tools, see the TI CC256x wiki. For information on pricing
and availability, contact the nearest TI field sales office or authorized distributor.
8.1.2 Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers. These
prefixes represent evolutionary stages of product development from engineering prototypes through fully
qualified production devices.
X Experimental, preproduction, sample or prototype device. Device may not meet all product qualification conditions and
may not fully comply with TI specifications. Experimental/Prototype devices are shipped against the following disclaimer:
“This product is still in development and is intended for internal evaluation purposes.” Notwithstanding any provision to the
contrary, TI makes no warranty expressed, implied, or statutory, including any implied warranty of merchantability of
fitness for a specific purpose, of this device.
null Device is qualified and released to production. TI’s standard warranty applies to production devices.
(1) NRND = Not recommended for new designs
8.2 Documentation Support
The following documents support the CC256x device:
Dual-Mode Bluetooth CC2564 Evaluation Board User Guide (SWRU450)
Dual-Mode Bluetooth CC2564 Evaluation Board Quick Start Guide (SWRU441)
CC256XQFN PCB Guidelines (SWRU420)
QFN/SON PCB Attachment Application Report (SLUA271)
CC256x Hardware Design Checklist (SWRR124)
DN035 Antenna Quick Guide (SWRA351)
AN058 Antenna Selection Guide (SWRA161)
Using TI Technology to Simplify Bluetooth Pairing Via NFC (SLAA512)
Surface Mount Assembly of Amkor’s Dual Row MicroLeadFrame (MLF) Packages
8.3 Related Links
Table 8-1 lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 8-1. Related Links
PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL
DOCUMENTS TOOLS &
SOFTWARE SUPPORT &
COMMUNITY
CC2560A (NRND)(1) Click here Click here Click here Click here Click here
CC2560B Click here Click here Click here Click here Click here
CC2564 (NRND)(1) Click here Click here Click here Click here Click here
CC2564B Click here Click here Click here Click here Click here
CC2560A NRND; CC2564 NRND
39
CC2560A, CC2560B, CC2564, CC2564B
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Device and Documentation SupportCopyright © 2012–2016, Texas Instruments Incorporated
8.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the
respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;
see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help
developers get started with Embedded Processors from Texas Instruments and to foster
innovation and growth of general knowledge about the hardware and software surrounding
these devices.
8.5 Trademarks
MSP430, DRP, E2E are trademarks of Texas Instruments.
Cortex, ARM7TDMIE are registered trademarks of ARM Limited.
ARM is a registered trademark of ARM Physical IP, Inc.
iPod is a registered trademark of Apple, Inc.
Dual-Mode Bluetooth are registered trademarks of Bluetooth SIG, Inc.
All other trademarks are the property of their respective owners.
8.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
8.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
C. QFN (Quad Flatpack No-Lead) Package configuration.
B. This drawing is subject to change without notice.
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5-1994.NOTES:
Seating Plane
RVM (S-PVQFN-N76) PLASTIC QUAD FLATPACK NO-LEAD
4211965/B 12/11
8,10
7,90
0,05
0,00
Pin 1 Indentifier
4X
0,90
0,80
5,40
E. See the additional figure in the Product Data Sheet for details regarding the exposed thermal pad features and dimensions.
D. The package thermal pad must be soldered to the board for thermal and mechanical performance.
76X
0,15
0,25
A10
A11
A1
B10
B9
B36
A40
B1
A20
B18
B19
B28A31
B27
B36
B1
B9
B10
B19
B28
B18
B27
A1
A40
A10
A11
A20
A21
A30
A31
4,80
4X
0,30
0,50
76X
0,24
0,60
4X
4X
0,60
0,24
0,30 TYP
0,70
4X
0,55
0,65
7,63
7,83 SQ
SQ
SWRS115-001
0,08 C
C A B
0,10
C A B
0,10
0,17
CL
PKG.
CL
PAD
THERMAL PAD
SIZE AND SHAPE
SHOWN ON SEPARATE SHEET
Bottom View
0,60
CC2560A NRND; CC2564 NRND
40
CC2560A, CC2560B, CC2564, CC2564B
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9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and
revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
9.1 mrQFN Mechanical Data
Bottom View
Exposed Thermal Pad Dimensions
NOTE: All linear dimensions are in millimeters
RVM (S-PVQFN-N76)
THERMAL INFORMATION
QFN/SON PCB Attachment, Texas Instruments Literature No. SLUA271. This document is available at www.ti.com.
The exposed thermal pad dimensions for this package are shown in the following illustration.
For information on the Quad Flatpack No-Lead (QFN) package and its advantages, refer to Application Report,
This package incorporates an exposed thermal pad that is designed to be attached directly to an external
heatsink. The thermal pad must be soldered directly to the printed circuit board (PCB). After soldering, the
PCB can be used as a heatsink. In addition, through the use of thermal vias, the thermal pad can be attached
attached to a special heatsink structure designed into the PCB. This design optimizes the heat transfer from the
directly to the appropriate copper plane shown in the electrical schematic for the device, or alternatively, can be
integrated circuit (IC).
PLASTIC QUAD FLATPACK NO-LEAD
4212066/B 12/11
3,30±0,10
3,00±0,10
A30
A31
B27
B28 B36
A40
A1
B1
A21
B19
B18
A20
B10
B9
A11
A10
SWRS115-018
CL-
PKG.
CL-
PAD
0,17
CC2560A NRND; CC2564 NRND
41
CC2560A, CC2560B, CC2564, CC2564B
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Mechanical, Packaging, and Orderable InformationCopyright © 2012–2016, Texas Instruments Incorporated
9.2 Packaging and Ordering
SWRS121-010
CC2560A CC2564 CC2560B CC2564B
ZLLL G3 ZLLL G3 ZLLL G3 ZLLL G3
YM7 YM7 YM7 YM7
= Last digit of the year
= Month in hex number, 1-C for Jan-Dec
= Primary site code for ANM
= Secondary site code for ANM
= Assembly lot code
= Pin 1 indicator
Y
M
7
Z
LLL
CC2560A NRND; CC2564 NRND
42
CC2560A, CC2560B, CC2564, CC2564B
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9.2.1 Package and Ordering Information
The mrQFN packaging is 76 pins and a 0.6-mm pitch.
For detailed information, see Section 9.1,mrQFN Mechanical Data.
Table 9-1 lists the package and order information for the device family members.
(1) NRND = Not recommended for new designs
Table 9-1. Package and Order Information
DEVICE PACKAGE
SUFFIX PIECES/REEL
CC2560ARVMT (NRND)(1) RVM 250
CC2560ARVMR (NRND)(1) RVM 2500
CC2564RVMT (NRND)(1) RVM 250
CC2564RVMR (NRND)(1) RVM 2500
CC2560BRVMT RVM 250
CC2560BRVMR RVM 2500
CC2564BRVMT RVM 250
CC2564BRVMR RVM 2500
Figure 9-1 shows the markings for the CC256x family.
Figure 9-1. Chip Markings
insert_swrs064
SWRS115-021
Carrier tape
Cover tape
Sprocket hole
Embossment
User direction of feed
A1 corner
Device on tape portion Empty portionEmpty portion
270-mm MIN The length is to extend
so that no unit is visible
on the outer layer of tape.
User direction of feed
Start
End
swrs064-001
CC2560A NRND; CC2564 NRND
43
CC2560A, CC2560B, CC2564, CC2564B
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9.2.2 Empty Tape Portion
Figure 9-2 shows the empty portion of the carrier tape.
Figure 9-2. Carrier Tape and Pockets
9.2.3 Device Quantity and Direction
When pulling out the tape, the A1 corner is on the left side (see Figure 9-3).
Figure 9-3. Direction of Device
9.2.4 Insertion of Device
Figure 9-4 shows the insertion of the device.
Figure 9-4. Insertion of Device
9.2.5 Tape Specification
The dimensions of the tape are:
Tape width: 16 mm
Cover tape: The cover tape does not cover the index hole and does not shift to outside from the carrier
tape.
Tape structure: The carrier tape is made of plastic. The device is put in the embossed area of the
carrier tape and covered by the cover tape, which is made of plastic.
reelpk_swrs064
Moisture-barrier bag
SWRS121-006
16.4 +2.0
–0.0
100.0 REF
330.0 REF
2.0 +–0.5
Ø 13.0 +0.5/–0.2
20.8
CC2560A NRND; CC2564 NRND
44
CC2560A, CC2560B, CC2564, CC2564B
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ESD countermeasure: The plastic material used in the carrier tape and the cover tape is static
dissipative.
9.2.6 Reel Specification
Figure 9-5 shows the reel specifications:
330-mm reel, 16-mm width tape
Reel material: Polystyrene (static dissipative/antistatic)
Figure 9-5. Reel Dimensions (mm)
9.2.7 Packing Method
The end of the leader tape is secured by drafting tape. The reel is packed in a moisture barrier bag
fastened by heat-sealing (see Figure 9-6).
Figure 9-6. Reel Packing Method
rlbx_swrs064
CC2560A NRND; CC2564 NRND
45
CC2560A, CC2560B, CC2564, CC2564B
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Mechanical, Packaging, and Orderable InformationCopyright © 2012–2016, Texas Instruments Incorporated
CAUTION
This integrated circuit can be damaged by ESD. Texas Instruments
recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can
cause damage. ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause
devices not to meet their published specifications.
9.2.8 Packing Specification
9.2.8.1 Reel Box
Each moisture-barrier bag is packed into a reel box, as shown in Figure 9-7.
Figure 9-7. Reel Box (Carton)
9.2.8.2 Reel Box Material
The reel box is made from corrugated fiberboard.
9.2.8.3 Shipping Box
If the shipping box has excess space, filler (such as cushion) is added.
Figure 9-8 shows a typical shipping box.
NOTE
The size of the shipping box may vary depending on the number of reel boxes packed.
box_swrs064
CC2560A NRND; CC2564 NRND
46
CC2560A, CC2560B, CC2564, CC2564B
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Figure 9-8. Shipping Box (Carton)
9.2.8.4 Shipping Box Material
The shipping box is made from corrugated fiberboard.
PACKAGE OPTION ADDENDUM
www.ti.com 29-Apr-2018
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
CC2560ARVMR NRND VQFNP-MR RVM 76 2500 Green (RoHS
& no Sb/Br) CU SN | Call TI Level-3-260C-168 HR -40 to 85 CC2560A
CC2560ARVMT NRND VQFNP-MR RVM 76 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2560A
CC2560BRVMR ACTIVE VQFNP-MR RVM 76 2500 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2560B
CC2560BRVMT ACTIVE VQFNP-MR RVM 76 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR CC2560B
CC2560BYFVR ACTIVE DSBGA YFV 54 2500 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM CC2560B
CC2560BYFVT ACTIVE DSBGA YFV 54 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM CC2560B
CC2564BRVMR ACTIVE VQFNP-MR RVM 76 2500 Green (RoHS
& no Sb/Br) CU SN | Call TI Level-3-260C-168 HR -40 to 85 CC2564B
CC2564BRVMT ACTIVE VQFNP-MR RVM 76 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2564B
CC2564NSRVMR NRND VQFNP-MR RVM 76 2500 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2564
CC2564NSRVMT NRND VQFNP-MR RVM 76 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2564
CC2564RVMR NRND VQFNP-MR RVM 76 2500 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2564
CC2564RVMT NRND VQFNP-MR RVM 76 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 CC2564
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
PACKAGE OPTION ADDENDUM
www.ti.com 29-Apr-2018
Addendum-Page 2
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
CC2560ARVMR VQFNP-
MR RVM 76 2500 330.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2560ARVMT VQFNP-
MR RVM 76 250 180.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2560BRVMR VQFNP-
MR RVM 76 2500 330.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2560BYFVR DSBGA YFV 54 2500 330.0 12.4 3.1 3.43 0.7 4.0 12.0 Q1
CC2564BRVMR VQFNP-
MR RVM 76 2500 330.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2564BRVMT VQFNP-
MR RVM 76 250 180.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2564RVMR VQFNP-
MR RVM 76 2500 330.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
CC2564RVMT VQFNP-
MR RVM 76 250 180.0 16.4 8.35 8.35 1.7 12.0 16.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 30-Apr-2018
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
CC2560ARVMR VQFNP-MR RVM 76 2500 336.6 336.6 28.6
CC2560ARVMT VQFNP-MR RVM 76 250 213.0 191.0 55.0
CC2560BRVMR VQFNP-MR RVM 76 2500 336.6 336.6 28.6
CC2560BYFVR DSBGA YFV 54 2500 367.0 367.0 35.0
CC2564BRVMR VQFNP-MR RVM 76 2500 336.6 336.6 28.6
CC2564BRVMT VQFNP-MR RVM 76 250 213.0 191.0 55.0
CC2564RVMR VQFNP-MR RVM 76 2500 336.6 336.6 28.6
CC2564RVMT VQFNP-MR RVM 76 250 213.0 191.0 55.0
PACKAGE MATERIALS INFORMATION
www.ti.com 30-Apr-2018
Pack Materials-Page 2
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INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF
PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,
DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN
CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s non-
compliance with the terms and provisions of this Notice.
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