CS22-12io1M High Efficiency Thyristor VRRM = 1200 V I TAV = 16 A VT = 1.27 V Single Thyristor Part number CS22-12io1M Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-220FP Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 2500 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Base plate: Plastic overmolded tab Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS22-12io1M Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 10 A 2 mA TVJ = 25C 1.30 V 1.59 V 1.27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 90 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1.65 V T VJ = 150 C 16 A 25 A TVJ = 150 C 0.86 V 13.2 m 2.5 K/W 0.5 K/W TC = 25C 50 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine VR = 0 V 440 As t = 10 ms; (50 Hz), sine TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 13 t P = 300 s PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0.3 A/s; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/s 500 A/s TVJ = 125C 500 V/s VD = 6 V TVJ = 25 C 1.3 TVJ = -40 C 1.6 V VD = 6 V TVJ = 25 C 30 mA TVJ = -40 C 50 mA TVJ = 150C 0.2 V 1 mA TVJ = 25 C 90 mA R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 60 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/s 30A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS22-12io1M Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 C -55 125 C 150 C 2 Weight MD mounting torque FC mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Product Marking Part Number Logo DateCode Lot# XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number CS22-12io1M Similar Part CS22-08io1M CLA16E1200PN CMA30E1600PN CLA30E1200PB Package TO-220ABFP (3) TO-220ABFP (3) TO-220ABFP (3) TO-220AB (3) CLA30E1200PC CLA30E1200HB CMA30E1600PB CMA30E1600PZ TO-263AB (D2Pak) (2) TO-247AD (3) TO-220AB (3) TO-263AB (D2Pak) (2HV) Equivalent Circuits for Simulation I V0 R0 Marking on Product CS22-12io1M * on die level Delivery Mode Tube Code No. 500226 Voltage class 800 800 1600 1200 1200 1200 1600 1600 T VJ = 150C Thyristor V 0 max threshold voltage 0.86 V R0 max slope resistance * 10.1 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS22-12io1M Outlines TO-220FP A OP E A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e A A1 A2 b c D E e H L L1 OP Q 2 Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS22-12io1M Thyristor 60 280 50 1000 50 Hz, 80% VRRM VR = 0 V 240 40 ITSM 30 [A] IT I2t TVJ = 45C 200 [A] 160 20 TVJ = 125C TVJ = 125C TVJ = 150C 125C 10 TVJ = 45C 2 [A s] 100 120 TVJ = 25C 0 0,5 1,0 1,5 80 0,001 2,0 0,01 VT [V] B IGT: TVJ = 25C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 30 C 25 180 sine IGT: TVJ = -40C IGT: TVJ = 0C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125C 3 1 t [s] Fig. 1 Forward characteristics 4 0,1 TVJ = 125C 101 20 tgd IT(AV)M [s] [A] 15 lim. 100 IGD: TVJ = 25C 10 typ. 5 A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 25 50 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe 24 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 20 0.5 0.4 0.33 16 0.17 0.08 P(AV) 3 ZthJC 2 12 75 100 125 150 175 Tcase [C] i Rthi (K/W) 1 0.015 2 0.124 3 0.395 4 1.606 5 0.86 Fig. 6 Max. forward current at case temperature ti (s) 0.0011 0.0019 0.07 1.1 4.9 [K/W] [W] 8 1 4 0 0 5 10 15 20 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature (c) 2019 IXYS all rights reserved 0,01 0,1 1 10 100 t [s] Tamb [C] IXYS reserves the right to change limits, conditions and dimensions. 0 0,001 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS22-12io1M IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d