R07DS0332EJ0300 Rev.3.00 Page 1 of 8
Jan 23, 2013
Preliminary Datasheet
CR5AS-12A
600V - 5A - Thyristor
Medium Power Use
Features
IT (AV) : 5 A
VDRM : 600 V
IGT : 100 A
Non-Insulated Type
Plannar Type
Outline
2, 4
PRSS0004ZG-A
(Package name: MP-3A)
RENESAS Package code:
1
3
1. Cathode
2. Anode
3. Gate
4. Anode
13
2
4
PRSS0004ZD-D
(Package name: DPAK(L)-(3))
123
4
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse v oltag e VRSM 720 V
DC reverse voltage VR (DC) 480 V
Repetitive peak off-state voltageNote1 V
DRM 600 V
DC off-state voltageNote1 V
D (DC) 480 V
Notes: 1. With gate to cathode resistance RGK = 220 .
R07DS0332EJ0300
Rev.3.00
Jan 23, 2013
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 2 of 8
Jan 23, 2013
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 7.8 A
Average on-state current IT (AV) 5 A
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
Surge on-state current ITSM 90 A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I2t for fusing I2t 33 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
— 0.32 g MP-3A, Typical value Mass — 0.36 g DPAK(L)-(3), Typical value
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 1.0 mA
Tj = 125°C, VRRM applied,
RGK = 220
Repetitive peak off-state current IDRM — — 1.0 mA
Tj = 125°C, VDRM applied,
RGK = 220
On-state voltage VTM — — 1.8 V
Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage VGD 0.1 — — V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220
Gate trigger current IGT 1 — 100 A Tj = 25°C, VD = 6 V, IT = 0.1 A
Holding current IH — 3.5 — mA
Tj = 25°C, VD = 12 V,
RGK = 220
Thermal resistance Rth (j-c) — — 3.0 °C/W Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 3 of 8
Jan 23, 2013
Performance Curves
103
102
100
101
–40 0 40 80 120 160
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
40
20
60
80
100
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Junction to ambient
Junction to case
Tc = 25°C
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100µA
(T
j
= 25°C)
P
GM
= 0.5W
V
D
= 6V
R
L
= 60Ω
P
G(AV)
= 0.1W
V
GD
= 0.1V
I
FGM
= 0.3A
10
2
10
1
10
0
10
0
10
−2
10
−1
10
0
10
−2
10
−3
10
−1
10
0
10
0
10
1
10
2
10
3
10
1
10
2
10
2
10
1
10
0
10
2
10
3
10
1
10
0
10
−1
10
1
10
2
10
−1
Typical Distribution
Typical Example
1.0
0.8
0.6
0.4
0.2
0
–40 0 40 80 120 160
V
D
= 6V
R
L
= 60Ω
Typical Example
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 4 of 8
Jan 23, 2013
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Case Temperature (°C)
Average On-State Current (A)
16
14
6
4
2
12
10
8
08
02467135
θ = 30°
60°
120°
90°
180°
160
120
60
40
20
140
100
80
08
02467
135
θ = 30°
60° 120°
90° 180°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)
Ambient Temperature (°C)
Average On-State Current (A)
160
120
60
40
20
140
100
80
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
60°
120°
90°
180°
160
120
60
40
20
140
100
80
08
02467
135
θ = 30°
60°
120°
90°
180°
θ
360°
Resistive,
inductive loads
Natural convection
θ
360°
Resistive,
inductive loads
Natural convection
Aluminum Board
80
×
80
×
t2.3
Case Temperature (°C)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
16
12
6
4
2
14
10
8
08
02467135
θ = 30° 60° 120°
90°
180°
160
120
60
40
20
140
100
80
08
02467
135
θ = 30° 60° 90° 120° 180°
θ θ
360°
Resistive
loads
θ θ
360°
Resistive loads
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 5 of 8
Jan 23, 2013
Typical Distribution
Typical Example
–40 0 40 80 120 160
VD = 12V
RGK = 220Ω
–40 0 40 80 120 160
160
100
80
40
20
0
140
60
120
Average On-State Current (A) Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Ambient Temperature (°C)
Ambient Temperature (°C)
160
120
60
40
20
140
100
80
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
60°
120°
90°
180°
160
120
60
40
20
140
100
80
08
02467
135
θ = 30°
60°
120°
180°
90°
θ θ
360°
Resistive loads
Natural convection
θ θ
360°
Resistive loads
Natural convection
Aluminum Board
80
×
80
×
t2.3
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
×
100 (%)
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 220Ω)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
×
100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Tj = 125°C
Typical Example
R
GK
= 220Ω
Typical Example
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
×
100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
160
0
120
140
40
60
80
100
20
Tj = 125°C
R
GK
= 220Ω
Typical Example
103
102
101
100
102
103
100
10−1
100101
100101102103
10−210−1
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 6 of 8
Jan 23, 2013
100101
10−210−1
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (RGK = rΩ)
Holding Current (RGK = 220Ω)
400
100
0
200
300
Tj = 25°C
Junction Temperature (°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
0
80
100
120
140
40
60
20
Typical ExampleTypical Example
Gate Trigger Current vs.
Gate Current Pulse Width
× 100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Current Pulse Width (μs)
–40 0 40 80 120 160
Typical Example
104
103
102
101
102103
100101
VD = 6V
RL = 60Ω
Ta = 25°C
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 7 of 8
Jan 23, 2013
Package Dimensions
SC-63 0.32g
MASS[Typ.]
TMP3PRSS0004ZG-A
RENESAS CodeJEITA Package Code Previous Code Unit: mm
10.4Max
1Max
0.5 ± 0.2
0.1 ± 0.1
0.5 ± 0.2
0.760.76 ± 0.2
2.3 ± 0.2
5.3 ± 0.2
6.6
1.4 ± 0.2
6.1 ± 0.2 1 ± 0.2
2.3
2.5Min
2.3
1
Package Name
MP-3A
Previous Code
PRSS0004ZD-D
DPAK(L)-(3)/DPAK(L)-(3)V
MASS[Typ.]
0.36g⎯
RENESAS CodeJEITA Package Code Unit: mm
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
0.55 ± 0.1
2.29 2.29
16.2 ± 0.5
4.7 ± 0.5
5.5 ± 0.5
6.9 ± 0.5
8.2 ± 0.6
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
(1.3)
Package Name
DPAK(L)-(3)
CR5AS-12A Preliminary
R07DS0332EJ0300 Rev.3.00 Page 8 of 8
Jan 23, 2013
Ordering Information
Orderable Part Number Packing Quantity Package IGT
CR5AS-12A#B01 Tube 75 pcs. MP-3A 1-100 A
CR5AS-12A#C04 Tube 75 pcs. MP-3A 20-50 A
CR5AS-12A#C05 Tube 75 pcs. MP-3A 20-100 A
CR5AS-12A-T13#B01 Embosse d Tape 3000 pcs. MP-3A 1-100 A
CR5AS-12A-T13#C04 Embossed Tape 3000 pcs. MP-3A 20-50 A
CR5AS-12A-T13#C05 Embossed Tape 3000 pcs. MP-3A 20-100 A
CR5AS-12A-A1#B00 Tube 80 pcs. DPAK(L)-(3) 1-100 A
CR5AS-12A-BA1#B00 Tube 80 pcs. DPAK(L)-(3) 20-50 A
CR5AS-12A-EA1#B00 Tube 80 pcs. DPAK(L)-(3) 20-100 A
Note : Please confirm the specification about the shipping in detail.
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