2N6315 2N6316
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6317 2N6318 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 7.0 A
Peak Collector Current ICM 15 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 90 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.95 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 0.25 mA
ICEV V
CE=Rated VCEO, VBE=1.5V 0.25 mA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=150°C 2.0 mA
ICEO V
CE=1/2 Rated VCEO 0.50 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=100mA, (2N6315, 2N6317) 60 V
BVCEO I
C=100mA, (2N6316, 2N6318) 80 V
VCE(SAT) I
C=4.0A, IB=0.4A 1.0 V
VCE(SAT) I
C=7.0A, IB=1.75A 2.0 V
VBE(SAT) I
C=7.0A, IB=1.75A 2.5 V
VBE(ON) V
CE=4.0V, IC=2.5A 1.5 V
hFE V
CE=4.0V, IC=0.5A 35
hFE V
CE=4.0V, IC=2.5A 20 100
hFE V
CE=4.0V, IC=7.0A 4.0
hfe V
CE=4.0V, IC=500mA, f=1.0kHz 20
fT V
CE=10V, IC=250mA, f=1.0MHz 4.0 MHz
2N6315 2N6316 NPN
2N6317 2N6318 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6315 series
devices are complementary silicon power transistors,
mounted in a hermetically sealed metal case,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R3 (2-September 2014)
www.centralsemi.com
2N6315 2N6316 NPN
2N6317 2N6318 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
Cob V
CB=10V, IE=0, f=1.0MHz, (2N6315, 2N6316) 200 pF
Cob V
CB=10V, IE=0, f=1.0MHz, (2N6317, 2N6318) 300 pF
tr V
CC=30V, IC=2.5A IB1=IB2=0.25A 0.7 μs
toff V
CC=30V, IC=2.5A IB1=IB2=0.25A 1.8 μs
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R3 (2-September 2014)
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(001)
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