VCE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNR 20H2500 Doc. No. 5SYA1582-02 May. 04 * High SOA * Fails into stable shorted state * High tolerance to uneven mounting pressure * Designed for series connection * Explosion resistant package * Modular design concept, available for a wide range of current ratings Maximum Rated Values1) Parameter2) Collector-emitter voltage Symbol Conditions min VCES Unit 2500 V 2000 A DC collector current IC Repetitive peak collector current ICM 4000 A VGES 20 V Tc = 25 C, (IGBT) 18000 W Tc = 75 C 2000 A 4000 A Gate-emitter voltage Total power dissipation Ptot Tc = 75 C max DC forward current IF Repetitive peak forward current IFM Surge current IFSM VR = 0 V, tp = 10 ms, Tvj = 125 C, half-sinewave 23 kA IGBT short circuit SOA tpsc VCC = 1500 V, VCEM 2500 V, VGE 15V 10 s Junction temperature Tvj 5 125 C Storage temperature Tstg -40 70 C FM 65 95 kN Mounting force 2) 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9 2) For detailed mounting instructions refer to ABB document no. 5SYA 2037-02 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNR 20H2500 IGBT Characteristic Values3) Parameter Symbol Collector-emitter saturation voltage VCEsat min 2.60 V Tvj = 125C 2.70 3.00 V 35 100 mA 500 nA 8.5 V Tvj = 125 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) IC = 360 mA, VCE = VGE, Tvj = 25 C Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Short circuit current tr td(off) tf Unit 2.20 VCE = 2500 V, VGE = 0 V, Qge max Tvj = 25C ICES Total gate charge typ IC = 2000 A, VGE = 15 V Collector cut-off current Gate-emitter threshold voltage 3) Conditions IC = 2000 A, VCE = 1250 V, VGE = -15 to 15 V VCC = 1250 V, IC = 2000 A, RG = 3.3 , VGE = 15 V, L = 200 nH inductive load Eon VCC = 1250 V, IC = 2000 A, RG = 3.9 , VGE = 15 V, L = 200 nH inductive load Eoff VCC = 1250 V, IC = 2000 A, RG = 3.3 , VGE = 15 V, L = 200 nH inductive load ISC VCC = 1500 V, RGon = 3.9 , RGoff = 22 , VGE 15 V, L = 200 nH tpsc =10 s 7 18.6 C 315 nF 25.5 nF 5.3 nF Tvj = 25C 1.2 s Tvj = 125C 1.1 s Tvj = 25C 0.9 s Tvj = 125C 1.0 s Tvj = 25C 2.0 s Tvj = 125C 2.3 s Tvj = 25C 0.7 s Tvj = 125C 0.7 s Tvj = 25C 3.0 J Tvj = 125C 4.0 J Tvj = 25C 3.0 J Tvj = 125C 3.6 J Tvj = 25C 12000 A Tvj = 125C 11000 A VCE = 25 V, VGE = 0 V, f = 1 MHz VCC = 1250 V, IC = 2000 A, RG = 3.9 , VGE = 15 V, L = 200 nH inductive load 5 Characteristic values according to IEC 60747-9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 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No. 5SYA1582-02 May. 04 page 2 of 9 5SNR 20H2500 Diode Characteristic Values4) Parameter Symbol Forward voltage VF Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery energy 4) Conditions IF = 2000 A VCC = 1250 V, IF = 2000 A, RG = 3.9 , VGE = 15 V, L = 200 nH inductive load Erec min typ max Unit Tvj = 25C 1.95 2.20 V Tvj = 125C 1.90 2.20 V Tvj = 25C 1100 A Tvj = 125C 1600 A Tvj = 25C 1000 C Tvj = 125C 1900 C Tvj = 25C 1.7 s Tvj = 125C 1.8 s Tvj = 25C 0.9 J Tvj = 125C 1.7 J Characteristic values according to IEC 60747-2 Thermal Properties Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Rth(j-c) IGBT 5.5 K/kW Diode thermal resistance junction to case Rth(j-c) Diode 11 K/kW IGBT thermal resistance case to heatsink Rth(c-h) IGBT Heatsink flatness : 1 K/kW Diode thermal resistance case to heatsink Rth(c-h) Diode Each submodule area < 50 m 2 K/kW 125 C max Unit Operating junction temperature Complete module area < 100 m Roughness : < 6.3 m Tvjop 5 Mechanical Properties Parameter Dimensions Symbol L* W* H Conditions Typical , see outline drawing min typ 236*150*26 mm Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm Weight 2.2 kg ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 3 of 9 5SNR 20H2500 Electrical configuration C (Collector) G (Gate) E (Emitter) AE (Aux. Emitter) Outline drawing StakPak H6 This is an electrostatic sensitive device. Please observe the international standard IEC 60747-1, chapter IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 4 of 9 5SNR 20H2500 IC [A] IF [A] 4000 4000 25 C 125 C 25 C 125 C 3000 3000 2000 2000 1000 1000 0 0 0.5 1.5 2.5 3.5 4.5 1.0 1.5 2.0 2.5 VF [V] VCE [V] Fig. 1 Typical IGBT on-state characteristics 9000 9000 VGE = 15 V 8500 8500 Tvj = 25 C 8000 7500 7000 6500 6500 6000 6000 5500 VGE = 14 V 5500 VGE = 13 V 5000 VGE = 15 V 7000 VGE = 14 V IC[A] IC[A] Tvj = 125 C 8000 7500 4500 5000 VGE = 13 V 4500 4000 4000 VGE = 12 V 3500 VGE = 12 V 3500 3000 3000 2500 VGE = 11 V 2500 2000 VGE = 11 V 2000 1500 1000 VGE = 9 V 500 VGE = 10 V 1500 VGE = 10 V 1000 VGE = 9 V 500 0 0 0 2 4 6 8 10 0 VCE[V] Fig. 3 Typical diode on-state characteristics Fig. 2 Typical IGBT output characteristics at Tvj = 25 C 2 4 6 8 10 VCE[V] Fig. 4 Typical IGBT output characteristics at Tvj = 125 C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 5 of 9 5SNR 20H2500 IC [A] Ic [A] 9000 4500 VCE = 15 V 4000 25 C 125 C 7500 3500 6000 VCC 1500 V VGE = +/- 15 V Rgon = 3.9 Ohm Rgoff = 3.3 Ohm Tvj = 125C 3000 2500 4500 2000 3000 1500 1000 1500 500 0 8 9 10 11 12 13 14 15 0 500 1000 1500 2000 2500 Fig. 5 Typical IGBT transfer characteristics 3000 VCE [V] VGE [V] Fig. 6 IGBT turn-off safe operating area (RBSOA) VGE [V] C [nF] 5 4 Cies 3 VCC = 750 V 2 12 100 VOSC = 50 mV VGE = 0 V f = 1 MHz 8 7 6 5 4 3 VCC = 1250 V 9 Coes 2 6 10 8 7 6 5 4 Cres VCC = 750, 1000, 1250 V IC = 2000 A VGE = - 15 ...+ 15 V Tvj = 25C 3 3 2 1 0 0 5 10 15 20 25 30 0 3 6 9 VCE [V] Fig. 7 Typical IGBT capacitances versus collector-emitter voltage Fig. 8 12 Qge [C] Typical IGBT gate charge characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 6 of 9 5SNR 20H2500 Eon, Eoff [J] 10 Eon, Eoff [J] VCC = 1250 V VGE = +/- 15 V RGon = 3.9 Ohm RGoff = 3.3 Ohm Tvj = 125C 8 VCC = 1250 V VGE = +/- 15 V ICE = 2000 A Tvj = 125C 8 Eon Eon 6 6 Eoff Eoff 4 4 2 2 0 0 1000 2000 3000 0 4000 0 4 8 12 16 20 ICE [A] Fig. 9 Typical IGBT switching energies per pulse versus on-state current tr, tdon [s] tf, tdoff [s] 3.0 VCC = 1250 V VGE = +/- 15 V RGon = 3.9 Ohm RGoff = 3.3 Ohm Tvj = 125C tdoff 2.5 2.0 2.4 RG [Ohm] Fig. 10 Typical IGBT switching energies per pulse versus gate resistor tdoff [s] 10 tf, tr, tdon [s] 5 VCC = 1250 V ICE = 2000 A VGE = +/- 15 V Tvj = 125C 2.0 8 tdoff 4 1.6 3 6 1.5 1.2 tdon tdon 2 4 1.0 0.5 tf 0.8 tr 0.4 0.0 800 1600 2400 3200 0.0 4000 ICE [A] Fig. 11 Typical IGBT switching times versus on-state current tr tf 1 2 0 0 0 Fig. 12 4 8 12 16 20 RG [Ohm] Typical IGBT switching times versus gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 7 of 9 5SNR 20H2500 Erec [J] Irr, Qrr [A, C] 3000 3.0 2500 Erec [J] Irr [A], Qrr [C], 2500 2.0 2000 1.6 2.5 Qrr Erec 2000 2.0 Irr 1500 Qrr 1500 1.2 1.5 1000 1000 Erec Irr 0.8 1.0 VCC = 1250 V VGE = +/- 15 V RGon = 3.9 Ohm Tvj = 125C 500 0 0 800 1600 2400 3200 0.5 0.0 4000 Typical diode reverse recovery characteristics versus forward current 0.4 0 0.0 0 IF [A] Fig. 13 VCC = 1250 V ICE = 2000 A VGE = +/- 15 V Tvj = 125C 500 Fig. 14 2 4 6 8 10 12 RG [Ohm] Typical diode reverse recovery characteristics versus gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1582-02 May. 04 page 8 of 9 5SNR 20H2500 Analytical function for transient thermal impedance: ZthIC [K/kW] 2 n Zth (j - c)(t) = Ri(1 - e - t/ i ) 1019 8 7 6 5 Diode 4 i =1 3 2 IGBT IGBT 1009 8 7 6 5 4 Double Side Cooling 2 10-3 Fig.15 DIODE Fm = 65...95 kN 3 2 3 4 5 6 7 89 10-2 2 3 4 5 6 7 89 10-1 2 3 4 5 6 7 89 100 2 i 1 2 3 4 Ri(K/kW) 2.284 2.306 0.472 0.402 i(ms) 580.8 53.11 3.286 0.609 Ri(K/kW) 4.569 4.611 0.945 0.804 i(ms) 580.8 53.11 3.286 0.609 3 4 5 6 7 89 101 t [s] Maximum thermal impedance of IGBT and diode versus time Environmental class according to IEC 60721 Mode Class Document - no. Storage IE 11 5 SZK 9101-01 Transportation IE 23 5 SZK 9102-01 Operation IE 33 5 SZK 9103-01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors Doc. No. 5SYA1582-02 May. 04