AO4402G 20V N-Channel MOSFET General Description Product Summary * Trench Power MOSFET technology * Low RDS(ON) * RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 20V 20A RDS(ON) (at VGS=4.5V) < 5.9m RDS(ON) (at VGS=2.5V) < 7.3m VDS Applications 100% UIS Tested 100% Rg Tested * DC/DC Converters in Computing, Servers, and POL * Battery protection switch SOIC-8 Top View D D D Top View Bottom View D D G S S S 1 8 D 2 7 3 6 D D G 4 5 D G S S S S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AO4402G SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TA=25C Power Dissipation B TA=70C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: August 2017 Steady-State Steady-State V A IDM 80 IAS 40 A EAS 80 mJ 3.1 W 2.0 TJ, TSTG Symbol t 10s 12 15 PD Junction and Storage Temperature Range Units V 20 ID TA=70C Maximum 20 RqJA RqJL -55 to 150 Typ 31 59 16 www.aosmd.com C Max 40 75 24 Units C/W C/W C/W Page 1 of 5 AO4402G Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=250mA V 1 TJ=55C 0.45 100 nA 0.85 1.25 V 4.9 5.9 6.3 7.6 7.3 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=18A 5.8 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 IS Maximum Body-Diode Continuous Current TJ=125C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=4.5V, VDS=10V, ID=20A A 5 VGS=4.5V, ID=20A Coss Units 20 VDS=20V, VGS=0V IDSS Max 1.2 m m S 1 V 5 A 3300 pF 485 pF 370 pF 2.4 3.6 31 45 nC 5.2 nC Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 15 ns tD(off) Turn-Off DelayTime 72 ns tf trr Turn-Off Fall Time 21 ns IF=20A, di/dt=500A/ms 17 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 30 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=0.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2017 www.aosmd.com Page 2 of 5 AO4402G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 2V 60 VDS=5V 60 2.5V ID (A) ID (A) 4.5V 40 20 40 125C 25C 20 VGS=1.5V 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 7 Normalized On-Resistance 1.4 VGS=2.5V 6 RDS(ON) (mW) 1 5 VGS=4.5V 4 VGS=4.5V ID=20A 1.2 1 VGS=2.5V ID=18A 0.8 3 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 1.0E+01 ID=20A 1.0E+00 125C 1.0E-01 125C 8 IS (A) RDS(ON) (mW) 10 1.0E-02 6 25C 1.0E-03 4 25C 1.0E-04 2 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 5 AO4402G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 5000 VDS=10V ID=20A 4500 Ciss 4000 Capacitance (pF) VGS (Volts) 4 3 2 1 3500 3000 2500 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 40 50 0 4 Qg (nC) Figure 7: Gate-Charge Characteristics 16 20 10000 TJ(Max)=150C TA=25C 10ms 100ms 100.0 RDS(ON) limited 1000 1ms Power (W) ID (Amps) 12 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 8 10ms 1.0 100ms TJ(Max)=150C TA=25C 0.1 0.0 0.01 DC 100 10 0.1 1 10 VDS (Volts) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=75C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2017 www.aosmd.com Page 4 of 5 AO4402G Figure A:Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5