AO4402G
General Description Product Summary
VDS
ID (at VGS=4.5V) 20A
RDS(ON) (at VGS=4.5V) < 5.9mΩ
RDS(ON) (at VGS=2.5V) < 7.3mΩ
Applications
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS
Avalanche energy L=0.1mH
CEAS
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RqJL
• DC/DC Converters in Computing, Servers, and POL
• Battery protection switch
Power Dissipation B
2.0
TA=70°C
PD
20
3.1
Gate-Source Voltage
Pulsed Drain Current C
15
Parameter
Drain-Source Voltage
Continuous Drain
Current
°C/W
°C/W
16
75
24
V
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
±12
V
Maximum
Units
TA=25°C
TA=70°C
SO-8
Tape & Reel
3000
°C/W
RqJA
31
59
40
Parameter
Max
°C
Units
Junction and Storage Temperature Range
-55 to 150
Typ
TA=25°C
Avalanche Current C
Thermal Characteristics
W
ID
A
40
80
mJ
80
20
20V N-Channel MOSFET
Package Type
Form
Minimum Order Quantity
20V
• Trench Power MOSFET technology
• Low RDS(ON)
• RoHS and Halogen-Free Compliant
Top View
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
Pin 1
Rev.1.0: August 2017 www.aosmd.com Page 1 of 5
AO4402G
Symbol Min Typ Max Units
BVDSS 20 V
VDS=20V, VGS=0V 1
TJ=55°C 5
IGSS ±100 nA
VGS(th) Gate Threshold Voltage 0.45 0.85 1.25 V
4.9 5.9
TJ=125°C 6.3 7.6
5.8 7.3 mΩ
gFS 100 S
VSD 0.6 1 V
IS5 A
Ciss 3300 pF
Coss 485 pF
Crss 370 pF
Rg1.2 2.4 3.6 Ω
Qg(4.5V) 31 45 nC
Qgs 5.2 nC
Qgd 8nC
tD(on) 7.5 ns
tr15 ns
tD(off) 72 ns
tf21 ns
trr 17 ns
Qrr 30 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
VDS=VGS, ID=250mA
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
IDSS
μA
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
IF=20A, di/dt=500A/ms
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=10V, RL=0.5W,
RGEN=3W
IF=20A, di/dt=500A/ms
Turn-On Rise Time
Turn-On DelayTime
Gate-Body leakage current
Diode Forward Voltage
DYNAMIC PARAMETERS
VGS=2.5V, ID=18A
RDS(ON)
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
Forward Transconductance
mΩ
Gate resistance
IS=1A, VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Gate Source Charge
f=1MHz
VGS=4.5V, VDS=10V, ID=20A
A. The value of RqJA is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with TA =25
°
C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.1.0: August 2017 www.aosmd.com Page 2 of 5
AO4402G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
3
4
5
6
7
0 3 6 9 12 15
RDS(ON) (mW)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS (A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
0.8
1
1.2
1.4
025 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=2.5V
ID=18A
V
GS
=4.5V
ID=20A
2
4
6
8
10
12
0 2 4 6 8 10
RDS(ON) (mW)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
ID=20A
25°C
125°C
0
20
40
60
80
012345
ID (A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=1.5V
2V
4.5V
2.5V
Rev.1.0: August 2017 www.aosmd.com Page 3 of 5
AO4402G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
1E-05 0.001 0.1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0
1
2
3
4
5
010 20 30 40 50
VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
04812 16 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
V
DS
=10V
ID=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
qJA
.R
qJA
Ton
T
PDM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150
°
C
TA=25°C
10ms
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID (Amps)
VDS (Volts)
V
GS
> or equal to 2.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
1ms
DC
R
DS(ON)
limited
TJ(Max)=150
°
C
TA=25°C
100ms
10ms
RqJA=75°C/W
100ms
Rev.1.0: August 2017 www.aosmd.com Page 4 of 5
AO4402G
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs -
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.1.0: August 2017 www.aosmd.com Page 5 of 5