©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD439/441
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD439
: BD441 60
80 V
V
VCES Collector-Emitter Voltage: BD439
: BD441 60
80 V
V
VCEO Collector-Emitter Voltage: BD439
: BD441 60
80 V
V
VEBO Emitter-Base Volt age 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
P C Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperatu re - 65 ~ 150 °C
Symbol Parame ter Test Conditio n Min. Ty p. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD439
: BD441 IC = 100mA, IB = 0 60
80 V
V
ICBO Collector Cut-off Current : BD439
: BD441 VCB = 60V, IE = 0
VCB = 80V, IE = 0 100
100 µA
µA
ICES Collector Cut-off Current : BD439
: BD441 VCE = 60V, VBE = 0
VCE = 80V, VBE = 0 100
100 µA
µA
IEBO Emitter Cut- off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain : BD439
: BD441
: BD439
: BD441
: BD439
: BD441
VCE = 5V, IC = 10mA
VCE =1V, IC = 500mA
VCE = 1V, IC = 2A
20
15
40
40
25
15
130
130
140
140
VCE(sat) * Collector-Emitter Saturation V oltage IC = 2A, IB = 0.2A 0.8 V
VBE(on) * Base-Emitter ON Voltage VCE = 5V, IC = 10mA
VCE = 1V, IC = 2A 0.58 1.5 V
V
fT Current Gain Bandwidth Product VCE = 1V, IC = 250mA 3 MHz
BD439/441
Medium Power Linear and Switching
Applications
Complement to BD440, BD442 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
BD439/441
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10
1
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE = 1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10 100
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
110100
0.1
1
10
1µs
10µs
100
µ
s
1ms
10ms
IC MAX. (Pulsed)
BD441
BD439
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD439/441
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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