High Performance InGaAs p-i-n Photodiode `FC' Active Device Mount 13PD300-FC The 13PD300-FC, an InGaAs photodiode with a 300m-diameter photosensitive region packaged in a TO-46 header and aligned in an FC active device mount, is designed for applications in both moderate-bit-rate fiberoptic communications and high sensitivity measurement equipment. This device is one of the most versatile of the Telcom Devices' family of optoelectronic components. Planar semiconductor design and dielectric passivation provide superior performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics: Parameters Test Conditions Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response -5V -5V 1300nm (-3dB) Min - 1.0 4 0.7 - Typ Max - -20 10 nA 12 pF 0.9 0.5 300 - Units Volts A/W ns MHz Absolute Maximum Ratings Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 30 Volts 25 mA 5 mA o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502