13PD100-FC - Anadigics, Inc.

High Performance InGaAs p-i-n Photodiode

‘FC’ Active Device Mount

13PD300-FC

The 13PD300-FC, an InGaAs photodiode with a 300µm-diameter photosensitive region

packaged in a TO-46 header and aligned in an FC active device mount, is designed for

applications in both moderate-bit-rate fiberoptic communications and high sensitivity

measurement equipment. This device is one of the most versatile of the

Telcom Devices’ family of optoelectronic components. Planar semiconductor design and

dielectric passivation provide superior performance. Reliability is assured by hermetic sealing

and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ).

Features

Planar Structure

Dielectric Passivation

100% Purge Burn-In

High Responsivity

Device Characteristics:

Parameters Test Conditions Min Typ Max Units

Operating Voltage - - - -20 Volts

Dark Current -5V - 1.0 10 nA

Capacitance -5V - 4 12 pF

Responsivity 1300nm 0.7 0.9 - A/W

Rise/Fall - - - 0.5 ns

Frequency Response (-3dB) - 300 - MHz

Absolute Maximum Ratings

Reverse Voltage 30 Volts

Forward Current 25 mA

Reverse Current 5 mA

Operating Temperature -40oC to + 85oC

Storage Temperature -40oC to + 85oC

Soldering Temperature 250oC