2731GN-110M Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.
GENERAL DESCRIPTION
The 2731GN-110M is an internally matched, COMMON SOURCE, class AB
GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF
output power at 200µs pulse width, 10% duty factor across the 2700 to 3100
MHz band. The transistor has internal pre-match for optimal performance. This
hermetically sealed transistor is designed for S-Band Radar applications. It
utilizes gold metallization and eutectic attach to provide highest reliability and
superior ruggedness.
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Diss ipation
Device Dissipation @ 25°C 250 W
Maximum Vo lt age an d Cur rent
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum T emp e r at u r e s
Storage Temperature (TSTG) -55 to +125 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 2 5°C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pin=7.5W, Freq=2.7, 2.9, 3.1 GHz 110 125 W
Gp Power Gain Pin=7.5W, Freq=2.7, 2.9, 3.1 GHz 11.7 12.2 dB
ηd Drain Efficiency Pin=7.5W, Freq=2.7, 2.9, 3.1 GHz 42 50 %
R/L Input Return Loss Pin=7.5W, Freq=2.7, 2.9, 3.1 GHz -7 dB
VSWR-T Load Mismatch Tolerance Pout=110W, Freq=2.7 GHz 5:1
Өjc Thermal Resistance Pulse Width=200uS, Duty=10% 1.1 °C/W
• Bias Condition: Vdd=+60V, Idq=250mA peak current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERIS TICS @ 25°C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 2.5 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 2 mA
BVDSS Drain-source breakdown voltage Vgs =-8V, ID = 3mA 250 V
Issue June 2011
2731GN – 110M
110 Watts - 60 Volts, 200 μs, 10%
2700 - 3100 MHz
2731GN-110M Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.
Typical Performance Data:
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB)
2700 MHz 7 118 0.45 -11 46 12.2
2900 MHz 7 151 0.43 -13 62 13.3
3100 MHz 7 128 0.40 -8 56 12.5
Model 2731G N-110M: Pi n Vs. Eff ici ency
0%
20%
40%
60%
80%
100%
4.0 5.0 6.0 7.0 8.0 9.0 10.0
Pi n (W)
Eff i ciency ( % )
2.7GHz 2.9GHz 3.1GHz
Mo del 2731GN-110M: P in vs. Ou t & G ain
0
20
40
60
80
100
120
140
160
180
4.0 5.0 6.0 7.0 8.0 9.0 10.0
Pin (W)
Pout ( W )
10
12
14
16
18
20
Gain (dB)
2.7GHz 2.9GHz 3.1GHz
2731 GN – 110M
110 Watts - 60 Volts, 200 μs, 10 %
2700 - 3100 MHz
2731GN-110M Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.
Transistor Impedance Information
Freq (GHz) Zs Zl
2.7 5.63 – j11.15 5.28 – j3.20
2.8 5.27 – j10.74 5.37 – j2.74
2.9 4.94 – j10.34 5.49 – j2.28
3.0 4.62 – j9.92 5.64 – j1.84
3.1 4.34 – j9.52 5.82 – j1.42
Note: in
Z is looking into the input circuit;
Load
Z is looking into the output circuit.
2731 GN – 110M
110 Watts - 60 Volts, 200 μs, 10 %
2700 - 3100 MHz
2731GN-110M Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.
Test Circuit Layout
Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9
2731 GN – 110M
110 Watts - 60 Volts, 200 μs, 10 %
2700 - 3100 MHz
2731GN-110M Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.
55-QP Package Dimension
Dimension Min (mil) M in (mm) Max (mil) Max (mm)
A 213 5.41 217 5.51
B 798 20.26 802 20.37
C 560 14.22 564 14.32
D 258 6.55 362 9.19
E 43 1.09 47 1.19
F 226 5.74 230 5.84
G 235 5.96 239 6.07
H 235 5.96 239 6.07
I 60 1.52 62 1.57
J 81 2.06 82 2.08
K 116 2.94 118 2.99
L 4 .102 6 .152
2731 GN – 110M
110 Watts - 60 Volts, 200 μs, 10 %
2700 - 3100 MHz
