CYPRESS SEMICONDUCTOR - RESS Features High speed 12ns Transparent write (7C191) @ CMOS for optimum speed/power Low active power 880 mW @ Low standby power 220 mW TTL-compatible inputs and outputs Automatic power-down when PRELIMINARY LSE D MM 2584662 0010022 243 MACYP CY7C191 CY7C192 SEMICONDUCTOR Functional Description The CY7C191 and CY7C192 are high- performance CMOS static RAMs orga- nized as 65,536 x 4 bits with separate I/O. Easy memory expansion isprovided by ac- tive LOW chip enable (CE) and three- state drivers. They have an automatic pow- er-down feature, reducing the power con- sumption by 75% when deselected. Writing to the device is accomplished when the chip enable (CE) and write enable (WE) inputs are both LOW. Data on the four input pins (Ip through I3) 64K x 4 Static RAM with Separate I/O Reading the device is accomplished by tak- ing the chip enable (CE) LOW while the write enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data output pins. The output pins stay in high-impedance state when write enable (WE) is LOW (CY7C192 only), or chip enable (CE) is HIGH. A die coat is used to insure alpha immunity. SRAMs deselected is written into the memory location speci- fied on the address pins (Ag through A45). Logic Block Diagram Pin Configurations DIP/SOJ Top View Astit Voc Ar2 As Ast] Ay Aq] Aa Aw tS 2477 As Au 8 so191 2300 A27 7co192 2200 8 = @ PUZeoNn an a nz E 2 Aw] I a 14, Aa} 8 1024 x 64x 4 = Ass E] 10 Os Bs o ARRAY wi lo O2 A; 2 5 a te sais Sao 6191-3 Ag GND WE 4a Ci9te Ci9t-1 Selection Guide 7EIM112 | 7CII-15 | 7C191-20 | 7C191-25 | 7C19135 | 7C191-45 FEIW9212 | FCISZ15 | 7C19220 | 7C192-25 | 70192-35 | 70192-45 Maximum Access Time (ns) 12 15 20 25 35 45 Maximum rating Commercial 155 145 135 115 115 Current (mA. Military 160 150 125 125 125 Maximum Standby Current (mA) 30 30 30 30 30 30 Shaded area contains advanced information. 2-323CYPRESS SEMICONDUCTOR b5E D = 258%bb2 0010013 18T mECYP CY7C191 Wins PRELIMINARY CY7C192 SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. For user guidelines, Static Discharge Voltage .......+-ssseeseeeeenes >2001V not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ..........e0000ee 65C to +150C = Latch-Up Current ....... ss see veces ence evens >200 mA Ambient Temperature with Operating Range : _ 6eO Power Applied .......:.seeeee eens 55C to +125C Ambient Supply Voltage to Ground Potential Range Temperature Vee (Pin 28 to Pin 14) 20... cece eee cence eee 0.5V to +7.0V Commercial OC WC VE 10% DC Voltage Applied to Outputs to + =e in High ZStatel!] ....... 0... eee 0.5V to Vec + 0.5V Militaryl2] 55C to +125C 5V + 10% DC Input Voltagell] .... 0... eee 0.5V to Vcc + 0.5V Output Current into Outputs (LOW) ........eeeeee 20 mA Electrical Characteristics Over the Operating Rangel*! TEI91 ~12 FEIT 15 ICN9212 7192-15 Parameter Description Test Conditions Min.. | Max. 4. Min. { Max. | Unit Vou Output HIGH Voltage Vec = Min., Toy = 4.0 mA 2A 24 (. Vv VoL Output LOW Voltage Voc = Min. Jo, = 8.0mA 64. = Tea. . V Vig Input HIGH Voltage 2.2 Vee 2:2 Vee Vv +O3V + 63V V; Input LOW Voltagel] 05.| 08 | -05 [0 Vv IL npu foltage' 8 Ix Input Load Current GND < V} <= Vcc =5 fo +5 5 #5 pA loz Output Leakage GND < Vo < Vcc, ~ +3 Jeo 5. SRE. pA Current Output Disabled Tos Output Short Vcc = Max., Vour = GND 300. +3005] mA Circuit Current! Icc Voc Operating Vcc = Max. Iour = 0mA, | Coml 168 156 2| mA Supply Current f = fax = I/trc Mi 160 Ispi Automatic CE Power-Down | Max. Vcc, CE > Vir, Oo 40 mA CurrentTTL Inputs Vin = Vier or Vin < Vi, = fax Isp Automatic CE Power-Down | Max. Vcc, CE> Vcc 0.3V, | Coml 10. 10 mA . Current--CMOS Inputs Vin = Vcc 0.3V or Vin < 03V, f= 0 Mil 15 Ske Shaded area contains advanced information, Notes: 1. Minimum voltage is equal to 2.0V for pulse durations oflessthan 3, See the last page of this specification for Group A subgroup testing in- 20 ns. formation. 2. Ta is the instant on case temperature. 4, Notmore than 1 outputshould be shorted at one time. Duration of the short circuit should not exceed 30 seconds.CYPRESS SEMICONDUCTOR | 7 CYPRESS = SEMICONDUCTOR bSE D MM 2589662 OOLOOL4 Olb MMCYP PRELIMINARY CY7C191 CY7C192 Electrical Characteristics Over the Operating Rangel] (continued) 7C19120 7C19125, 35, 45 719220 7C19225, 35, 45 Parameter Description Test Conditions Min. | Max. Min. Max. [| Unit Von Output HIGH Voltage Vcc = Min., log = 4.0 mA 24 2.4 Vv VoL Output LOW Voltage Vec = Min., Io, = 8.0 mA 0.4 0.4 Vv Vee Vcc Vin Input HIGH Voltage 2.2 +03V 2.2 +03V Vv Vit Input LOW Voltage -0.5 0.8 -3.0 0.8 Vv Iix Input Load Current GND < Vi < Vcc 5 +5 5 +5 pA Toz Output Leakage GND < Vo < Vcc, -5 +5 5 +5 pA Current Output Disabled Tos Output Short Vcc = Max., Vour = GND 300 300 | mA Circuit Currentl4] Tec Voc Operating Voc = Max. Iour=OmA, | Coml 135 115 mA Supply Current f= fax = I/tpc Mil 150 125 Ispi Automatic CE Power-Down | Max. Vcc, CE > Vir, 30 30 mA CurrentTTL Inputs Vin > Vin or Vin < Viz, f = fax Isp2 Automatic CE Power-Down | CE > Vcc 0.3V, 15 15 mA CurrentCMOS Inputs Vin S Vec 0.3V or Vin < 0.3V, =0 Shaded area contains advanced information. Capacitance!5] Parameter Description Test Conditions Max. Unit Cin Input Capacitance Ta = 25C, f = 1 MHz, 8 pF Cour Output Capacitance Vec = 5.0V 10 pF AC Test Loads and Waveforms(l R1481 Rt48100, SV | re SY a | R2 Ra 30 pF 255.0. SPF 255.0. INCLUDING INCLUDING JIG AND => = JIG AND => = SCOPE - SCOPE ~ - (a) (b) C1914 Equivalent to: THEVENIN EQUIVALENT 1672, QUTPUT 0A 1.73 Notes: 5. Tested initially and after any design or process changes that may affect 6. these parameters. slower speeds. t, = <3ns for the 12 and 15 speeds. t, = <5ns for the 20 and 2-325 ALL INPUT PULSES SRAMsCYPRESS SEMICONDUCTOR bSE D M@ 2589bb2 0010015 T52 MMCYP ae CY7C191 Wiis PRELIMINARY CY7C192 SEMICONDUCTOR Switching Characteristics Over the Operating Rangel?7] 7CI9N4~-12 | 7C194-18-2] 7C191-20 | 7C191-25 | 7C191-35 7192-22: |. 7192-15 | 7019220 7C19225 7019235 7019245 Parameter Description Min, | Max.:| Min. | Max.:| Min. | Max. | Min. | Max. | Min. | Max, | Min. | Max. | Unit READ CYCLE : tre Read Cycle Time 12 15 20 25 35 45 ns taa Address to Data 12 5 20 25 35 45 ns Valid toHA Output Hold from 3 3 3 3 3 3 ns Address Change tacE CE LOW to 12 15 20 25 35 45 | ns Data Valid tLzcE CE LOW to 3 3 3 3 3 3 ns Low ZI8] tyzcr CE HIGH to 5 7 9 11 15 15 ns High Z18.9] tpy CE LOW to 6 0 0 0 0 ns Power-Up tpp CE HIGH to 12 45 20 25 35 45 ns Power-Down WRITE CYCLEUO] two Write Cycle Time 12 15 20 25 35 45 ns tscE CE LOW to 9 10 15 18 22 22 ns Write End taw Address Set-Up to 5 10 | 15 20 25 35 ns Write End tHa Address Hold from | @ 0 0 0 0 0 ns Write End tsa Address Set-Up to @ 9 | 0 0 0 0 ns. Write Start tpwe WE Pulse Width 8 9 15 18 22 22 ns tsp Data Set-Up to 8 9 10 10 15 15 ns Write End typ Data Hold from 6 a 0 0 0 0 ns Write End tLzwE WE HIGH to 3 3 3 3 3 3 ns Low Z (7C192)18] tyZWE WE LOW to 7 F 10 11 15 15 ns High Z (7C192)(89 town WE LOW to 5A 15 20 25 30 35 ns Data Valid (7C191) tapv Data Valid to 12 45 20 20 30 35 ns Output Valid (7C191) tpcE CE LOW to 12 15 20 25 35 45 ns Data Valid (7C191) Shaded area contains advanced information. Notes: 7. Test conditions assume signal transition time of 3 ns or lessfor12 9. and 15 speeds and 5 ns or less for 20 through 45 speeds, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output tuzce and tyzwe are specified with C, = 5 pF as in part (b) of AC Test Loads. Transition is measured +500 mV from steady-state volt- age. 10. loading of the specified Io_/lop and 30-pF load capacitance. . At any given temperature and voltage condition, tyzcx is less than tLzcE: tyzweis less than tuzwe for any given device. These parame- ters are guaranteed and not 100% tested. 2-326 The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set- up and hold timing shouldbe referenced to the rising edge of the signal that terminates the write.CYPRESS SEMICONDUCTOR > bSE D MM 2589662 0020026 999 mmCcYP CY7C191 awn... 2 Ciperss PRELIMINARY CY7C192 2 SEMICONDUCTOR Switching Waveforms Read Cycle No, 1141, 12] tac ADDRESS * 2 TAA | x t$$ tora >| DATA OUT PREVIOUS DATA VALID DATA VALID 191-6 Read Cycle No. 2[11, 13] cE tac nN fT ~ /) t ACE I tHzce HIGH HIGH IMPEDANCE a IMPEDANCE DATA OUT << DATA VALID tzcE > -*< tpp >} / tpu Voc N icc SUPPLY 50% 50% kK CURRENT NK isp C191-7 Write Cycle No. 1 (WE Controlled)! ADDRESS CE tpwe WE tsp tup DATA IN DATA VALID tHzwe >| tLzwe HIGH IMPEDANCE DATA OUT DATA UNDEFINED (70192) towe tapv DATA OUT (70191) DATA UNDEFINED DATA VALID 191-8 Notes: 11. WE is HIGH for read cycle. 12. Device is continuously selected, CE = Viz. 13. Address valid prior to or coincident with CE transition LOW. 2-327 14. IfCE goes HIGH simultancously with WE HIGH, the output remains in a high-impedance state (7C192 only).CYPRESS SEMICONDUCTOR ) 7 y 4 aati = RESS PRELIMINARY bS5E ) WH 254%bbe 010017 825 MBCYP CY7C191 CY7C192 CYPRE SEMICONDUCTOR a Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) [19 14] ADDRESS DATA IN DATA OUT (7C192) DATA OUT (70191) Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs, SUPPLY VOLTAGE 1.4 1.2 NORMALIZED Ico, | sp oo = oO ao ao 2 ny > o o 45 5.0 5.5 6.0 SUPPLY VOLTAGE (V) 4.0 NORMALIZED ACCESS TIME ys. SUPPLY VOLTAGE oa e& NORMALIZED taq gas S io 45 5.0 55 6.0 SUPPLY VOLTAGE (V) two tsp DATA VALID tuzwe =| HIGH IMPEDANCE toce tapy NORMALIZED SUPPLY CURRENT ys. AMBIENT TEMPERATURE loc = as o My fF NORMALIZED loc, I ga a 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME vs, AMBIENT TEMPERATURE = ao = pb = bo _ | Voc = 5.0V NORMALIZED ta, 5 a 0.6 -55 25 125 AMBIENT TEMPERATURE (C) 2-328 typ DATA VALID ci91-9 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE = fo oO = oO oO ao oO 60 40 20 OUTPUT SOURCE CURRENT (mA) oo Oo 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE OUTPUT SINK CURRENT (mA) oOo o o Oo Oo oOo np oO 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) oo OoCYPRESS SEMICONDUCTOR bSE ) MM 2589bb2 0010018 2b) MMCYP CY7C191 a= Fons PRELIMINARY CY7C192 SEMICONDUCTO! Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs. SUPPLY VOLTAGE vs. OUTPUT LOADING NORMALIZED Icc vs. CYCLE TIME 3.0 30.0 1.25 | ow 925 e 25.0 3 Yo os Sov 2 _ _ A = & 20 20.0 fF 1.00- Vay = 0.5V < a = a $15 = 15.0 S aad im iy "| 3 10 9 40.0 Voc = 4.5V 9 0.75 Ta = 25C LY 05 5.0 0.0 0.50 00 10 20 30 40 5.0 0 200 400 600 800 1 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Information Speed Package (ms) Ordering Code Name Package Type 20 CY7C19120PC 28-Lead (300-Mil) Molded DIP Commercial CY7C191-20VC ? 28-Lead Molded SOJ 25 CY7C19125PC 28-Lead (300-Mil) Molded DIP Commercial CY7C191-25VC 28-Lead Molded SOJ 35 CY7C191-35PC 28-Lead Molded DIP Commercial CY7C191-35VC 3 28-Lead Molded SOJ Shaded area contains advanced information. 2-329CYPRESS SEMICONDUCTOR b5E ) = 2589bb2 0010019 &T8 MMCYP PRELIMINARY CY7C191 CY7C192 3 CYPRESS SEMICONDUCTOR Information Speed (ns) Ordering Code CY7C19220PC CY7C19220VCE CY7C19225PC CY7C19225VC Package Type 28-Lead (300-Mil) Molded DIP 28-Lead Molded SOJ 28-Lead (300-Mil) Molded DIP 28-Lead Molded SO} Operating Range Commercial Commercial CY7C19225DMB CY7C19225LMB CY7C19235PC 28-Lead CY7C19235VC 28-Lead (300-Mil) CerDIP Military 28-Pin Rectangular Leadless Molded DIP 28-Lead Molded SOJ CY7C192--35DMB 28-Lead CerDIP Military Commercial CY7C192-35LMB 45 CY7C19245DMB 28-Pin Rectangular Leadless Chip Carrier 28-Lead (300-Mil) CerDIP Military CY7C19245LMB 28-Pin Leadless Carrier Shaded area contains advanced information. MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Switching Characteristics Parameter Subgroups Parameter | Subgroups Vou 1, 2,3 READ CYCLE Vor 1, 2,3 trc 7, 8,9, 10, 11 Ving 1, 2,3 taa 7, 8, 9, 10, 11 Vit Max. 1, 2,3 toHA 7, 8,9, 10, 11 Ix 1, 2,3 tACE 7, 8,9, 10, 11 Tor L232 WRITE CYCLE Toc 12,3 twe 7, 8,9, 10, 11 Ton 123 tscE 7, 8,9, 10, 11 taw 7, 8, 9, 10, 11 Ispa 1, 2,3 tHA 7, 8,9, 10, 11 Document #: 3800076~I tsa, 7, 8,9, 10, 11 tpwE 7, 8,9, 10, 11 tsp 7, 8, 9, 10, 11 tHD 7, 8,9, 10, 11 tawel?] 7, 8, 9, 10, 11 tapvl5l 7, 8,9, 10, 11 Note: 15. CY7C191 only 2-330