TUENMUTHAATUUUAH 112 195.1 PHASE CONTROL SCRs__,, 301 .5 TO 5 AMPERES GE TYPE C203 cs c?7 - JEDEC 2N5060-64 2N2322-29 2N2344-48 2N1595-99,A ELECTRICAL SPECIFICATIONS VOLTAGE RANGE - 25-400 25-200 FORWARD CONDUCTION I+( Rms) Max. RMS on-state current (A) x 1.6 1.6 1 average on-state current @ 1 50 1.0 1.0 T(AV} conduction (A) @ T @ 85C @ 55C Max. one cycle, non-repetitive tsm current (A) 18 % Pt > 1.5 msec {A? sec} peak on-state voltage Cc, rated ( Max. internal resistance, dc 10 Com) 0.5 2.2 Max. holding currant @ 25C (mA) 2 Typical turn-off time (usec! @ max. T) 40 Maximum turn-off time (usee @ 110C) - tg +t, Typical turn-on time (usec @ 110C) : 1.4 di/dt current 50 T Junction operating temperature range 65 to 125 65 to 125 ~65 to 100 40 to 110 40 to 110 BLOCKING Typical criticat rate-of-rise of off-state dv/dt voltage, exponential to rated Vogm @ max. rated Ty (V/usec) FIRING l gate current to trigger ST @ 65C @ c @ 25C Max. required gate voltage to trigger @ -65C @ c @ ae Min. required gate voltage to trigger Vet @ 110C @ 125C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 15 _ c108a1 25 2N2344 - _ 30 - clo6y1 C1081 50 - 2N2345 C106F 1 C108F1 60 c103YY - - ~ 100 C103A 2N2346 C106A1 C108A1 CSA 150 C5G 2N2347 - - 200 C5B 2N2348 C106B1 C108B1 250 2N2327 CSH 300 C106C1 c108Ct 400 C10601 c10801 500 C1IO6Et C108E1 600 C106M1 c108M1 PACKAGE OUTLINE NO. 173 173 JAN & JANTX types available. t. 2N885-89 available 20 MA max. IGr. 2. 2N2322A-28A available 20 mA max. |g. 138SCR C5 Series 2N2322-29 1.6A RMS Up to 400 Volts 2N2322A-28A ) C311 (Diamond Base)! }_ The C5 Series of Silicon Controlled Rectifiers are reverse blocking thyristors for use in low power switching and control applications. They feature two ranges of gate sensi- tivity and high external gate-cathode shunting resistance. e All-diffused e Two ranges of gate sensitivity 2N2322-29-200uA max. & 2N2322A-28A202A max. e Diamond flange types (C511) for convenient power dissipation e Low holding current Broad voltage range e Designed to meet MIL-S-19500/276 MAXIMUM ALLOWABLE RATINGS 2N2322 C5U BBV. 25V.* 40V.* 2N2322A 25V.* 25V.* 40V.* 2N2323 C5F 50V.* 50V.* 75V.* 2N2323A _ 50V.* 50V.* 75V.* 2N2324 C5A 100V.* 100V.* 150V.* 2N2324A _ 100V.* 100V.* 150V.* 2N2325 C5G 150V.* 150V.* 225V.* 2N2325A 150V.* 150V.* 225V.* 2N2326 C5B 200V.* 200V.* 300V.* 2N2326A 200V.* 200V.* 3800V.* 2N2327 C5H 250V.* 250V.* 850V.* 2N2327A 250V.* 250V.* 350V.* 2N 2328 C5C 300V.* 300V.* 400V.* 2N2328A 300V.* 300V.* 400V.* 2N23829 C5D 400V.* 400V.* 500V.* Peak Positive Anode Voltage, PFV 666s 500 Volts RMS On-State Current, Inpyg).- 6 ee 1.6 Amperes (all conduction angles) Average On-State Current, Ipiay)....0.00-0.000-0-0-5- Depends on conduction angle (see Charts 2, 3, 5 and 6) Critical Rate-of-Rise of On-State Current, di/dt: Gate Triggered Operation, Switching from Rated Voltage............0200..... 50 Amperes per microsecond Peak One Cycle Surge (non-rep) On-State Current, Ipgy....0.0.000 00.000 15 Amperes* [t (for fusing), for times 2 1.5 milliseconds...0.0... 000. ee 0.5 Ampere?seconds Peak Gate Power Dissipation, Pgy .... 2... ee 0.1 Watts* Average Gate Power Dissipation, Peay)... 62. .0.01 Watts* Peak Positive Gate Current, Igy. 000 0.1 Amperes* Peak Positive Gate Voltage, Vay... 0000 ee 6 Volts* Peak Negative Gate Voltage, Vey... 000 eee 6 Volts* Storage Temperature, Typg. 2-6 eee 65C to +150C* Operating Temperature, Ty... 02.0. ee 65C to +125C* *Indicates data included on JEDEC type number registration +When ordering the Diamond Base versions, be sure to include the proper voltage letter symbol. For example: The 25V Diamond Base version of the C5U (2N2322) is type number C511U. tThe C511 series is identical to the C5(2N2322-29) series except that a diamond base flange is soldered to the base of the unit, All ratings and characteristics are common to both series. See charts 17 thru 21 for Transient Thermal Impedance and Current Curves. 653C5 SERIES CHARACTERISTICS PEAK REVERSE or Tena Verw = Vor = Rated. OFF -STATE | 2.0 | 10.0 T,. = +25C, Ro, = 1000 Ohms 2N2322-29 (C5 Series) CURRENT or * = 2000 Ohms 2N2322A-28A All Types Tous 40 | 100* T,. = +125C, Rex = 1000 Ohms 2N2322-29 (C5 Series) = 2000 Ohms 2N2322A-28A GATE TRIGGER lew zAde CURRENT 2N2322-29 10 | 200 To = +25C, Vp = 6Vdc, Ry, = 100 Ohms (C5 Series) Rex = 1000 Ohms 2N2322A-28A 2 20 To = +25C, Vp = 6Vdc, Ry = 100 Ohms Rex = 2000 Ohms 2N2322-29 ; 20.0 | 350* T. = 65C, Vp = 6Vde, Ry = 100 Ohms (C5 Series) Rex = 1000 Ohms 2N2322A-28A 10 75* T, = 65C, Vy = 6Vde, R;, =: 100 Ohms Rex = 2000 Ohms GATE TRIGGER Ver Vde VOLTAGE 2N2322-29 0.35 0.5 0.8 Ty = +25C, V, = 6Vdc, Ry, = 100 Ohms (C5 Series) Rex = 1000 Ohms 2N2322A-28A 0.35 0.4 0.6 To = +25C, Vp = 6Vdc, R, =: 100 Ohms Rex = 2000 Ohms 2N2322-29 0.7 1.0* Ty = 65C, Vp = 6Vdc, R, = 100 Ohms (C5 Series) Rex = 1000 Ohms 2N2322A-28A _ 0.9* Ty = 65C, Vp = 6Vde, Ry = 100 Ohms Rex = 2000 Ohms 2N2322-29 0.1*| 0.25 0.5 Ty, = +125C, Vp = Rated Vpry Value (C5 Series) Rex = 1000 Ohms, R, = 100 Ohms 2N2322A-28A 0.1*{ T. = +125C, Vp, = Rated Vprpy Value Rex = 2000 Ohms, R;, = 100 Ohms PEAK ON-STATE Vox 2.0 2.2 Vv Ta. = +25C, Ipy = 4.0A, Single Half Sine VOLTAGE Wave Pulse, 2.0 Millisec. Wide All Types 1.9 2.0* Ty, = +85C, Ip;ay) = 1.0A, Half Sine Wave, 60 Hz, 180 Conduction Angle HOLDING Ty mAde | Rex = 1000 Ohms 2N2322-29 (C5 Series) CURRENT ss = 2000 Ohms 2N2322A-28A All Types 1.0 2.0 T. = +25C, Ry, = 10K All Types 1.5 3.0* To = 65C, Ry, = 10K 2N2322-29 0.15*| 0.4 To = +125C, Ry, = 50K 2N2322A-28A 0.10*| 0.4 TURN-ON TIME tytt, | 1.4 | usec | To = +25C, Ip = 1.0A, Vpy = Rated Vpry Value, All Types Gate Supply: 6 Volt Open Circuit, 330 Ohm Load Line, 0.1 xsec. Rise Time, 5 usec. Min. Pulse Width. CIRCUIT- ta 40 ~ | usec | To = +125C, Ipy = 1.0A Peak. COMMUTATED Rectangular current pulse, 50 usec duration. Rate of TURN-OFF TIME rise of current <10 amperes/zsec. Commutation rate All Types <5 amperes/usec. Peak reverse voltage = rated Vprm volts max. Reverse voltage at end of turn-off time interval = 15V. Repetition rate = 60 pps. Rate of rise of re-applied off-state voltage (dv/dt) = 20V/ usec. Off-state voltage = rated Vppy volts. Gate bias during turn-off time interval = 0 volts, 100 ohms. *Indicates data included on JEDEC type number registration 654| C5 SERIES | 20 a cS @ NOTES .(1) JUNCTION TEMPERATURE #125C. {2} FREQUENCY, 50 TO 400 Hz Ai YA t/T= DUTY CYCLE 2 b {3) eel AVERAGE ON-STATE POWER DISSIPATION-WATTS 0.2 04 06 0.8 1.0 AVERAGE ON-STATE CURRENT-AMPERES MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM 12 14 16 N 14 NOTES: (1) JUNCTION TEMPERATURE RANGE,-65C TO +125C. (2)SHADED AREA REPRESENTS LOCUS OF POSSIBLE TRIGGERING POINTS FROM -65C TO +125C, 2 (3)6.0 VOLTS DG ANODE-TO-CATHODE. (4)GATE SUPPLY IMPEDANCE = 2000 OHMS LOOKING INTO SUPPLY FROM TEST UNIT TERMINALS. g r ~ TT Tt 4 2 10 MINIMUM GATE CURRENT REG'D TO TRIGGER = ALL UNITS AT: +#25C s5"0 TY) 6 + -65C = NAN | | Jos RADA MINIMUM GATE 0. NX \ VOLTAGE REQD| w N TO TRIGGER & ALL UNITS AT: | o j a N $06 +25C 3 N\ ARN z KAN E NA N\ N\ Fos IS a NX zZ N\ RS 02 A MAXIMUM GATE \ NO N VOLTAGE THAT WILL NOT TRIGGER ANY , UNITS AT +125C 1 "400 -80 -60 -40 -20 0 +20 +40 +60 +80 +100 INSTANTANEOUS GATE. CURRENT - MICROAMPERES 9. GATE TRIGGERING CHARACTERISTICS FOR 2N2322A-28A ONLY : (1 JUNCTION TO (2) CELL LEAD MOUNTED, NO HEAT SINK TRANSIENT THERMAL IMPEDANCE-C PER WATT ol 10.0 TIME IN SECONDS GATE TRIGGER VOLTAGE-VOLTS GATE TRIGGER CURRENT-MA 11. MAXIMUM TRANSIENT THERMAL IMPEDANCE INSTANTANEOUS GATE VOLTAGE (Vg) - VOLTS 100 0.8 a4 0.2 Qo 656 | | | NOTES: (1) SHADED AREA REPRESENTS LOCUS OF POSSIBLE TRIGGER rr er POINTS FROM -65C TO +128%C JUNCTION. TEMP MIN, GATE CURRENT REQUIRED ee OCR TURE TO TRIGGER ALL UNITS (3) 6 VOLTS OC ANODE TO H125ec = CATHODE. fr +25C] -65C (4) Gate SUPPLY IMPEDANCE * | Seater 7 ST UNIT ~ 65C TERMINALS . + 25C | MIN, GATE VOLTAGE REQUIRED TO TRIGGER ~ [ALL UNITS N +125C 4 MAXIMUM GATE VOLTAGE THAT WILL NOT TRIGGER A ANY UNITS AT +#125C Ls ( (ttt | -100 oO +100 +200 +300 +400 INSTANTANEOUS GATE CURRENT (Ig) - MICROAMPERES ~ ; 8. GATE TRIGGERING CHARACTERISTICS FOR 2N2322-29 (C5 SERIES) ONLY NOTES: (1} DATA TAKEN USING RECTANGULAR GATE PULSES. {2) JUNCTION TEMPERATURE = 25C. GATE TRIGGER VOLTAGE GATE TRIGGER CURRENT 4 8 2 16 20 24 28 32 GATE PULSE WIDTH-MICROSECONDS 10. TYPICAL GATE TRIGGER CURRENT AND VOLTAGE VARIATION WITH GATE PULSE WIDTH 0 NOTES: (I) CURVES SHOWN ARE FOR VARIOUS JUNCTION TEMPERATURES. 50 KN (2) ANODE SUPPLY VOLTAGE = 50 VDC MIN 8 ou NN a = 20 ~ /-MAXIMUM AT -65C 5 SSN | Acinxinn AT 25C z MAXIMUM & ? 10 i J ~ MAXIMUM AT 128C Zz PT] --~ E05 ] < 4 mo. 3 mEAY 2 o2 PN} wintMum ayesec 3 Pp NN a ~ NUN L XY NC ikon AT 28C T MINIMUM AT 125C 100 200 600 1000 2000 000 10,000, GATE-TO-CATHODE RESISTANCE-OHMS 12. MAXIMUM AND MINIMUM HOLDING CURRENT VARIATION WITH EXTERNAL GATE-TO-CATHODE RESISTANCE FOR 2N2322-29 (C5 SERIES) ONLY 100,900i | | | 16 g \ NOTES (1) AT RATED LOAD CONDITIONS. wi 14 (2) JUNCTION TEMPERATURE IMMEDIATELY ae NX PRIOR TO SURGE = -65C TO +125C. sq le NY uw ze ig NN ow Ls 35 @ > go wl 6 a se bh an 4 z ~| o 2 Q | 2 4 6 8 10 20 40 60 CYCLES AT 60 Hz 13. MAXIMUM ALLOWABLE SURGE (NON-REPETITIVE) ON-STATE CURRENT 360 | N NOTE: 6 VOLTS ANODE VOLTAGE. 320 NX 3 280 NI a g NK ip 240 3 et NA & 200 SJ ? lh e Pa g 160 a ra x 3 DF a 120 w So 2 F a0 B eo 40 4+ | TYPICAL a } MINIMUM (90% OF UNITS) 40-760 40-20 20 40 60 80 too 120 JUNCTION TEMPERATURE - C 15. VARIATION OF GATE TRIGGER CURRENT WITH TEMPERATURE FOR 2N2322-29 (C5 SERIES) ONLY 100 80 60 40 20 TRANSIENT THERMAL IMPEDANCE-C PER WATT OO t 9.001 0.01 0. BREAK OVER VOLTAGE IN % OF RATED VOLTAGE 14. GATE TRIGGER VOLTAGE-VOLTS DC. 16. C5 SERIES \ e TEMPERATURE = NTL 20 N NN NY NN ms JUNCTION TEMPERATURE = o |o00 2000 5000 10,000 20900 @ATE TO CATHODE RESISTANCE-OHMS TYPICAL BREAKOVER VOLTAGE VARIATION WITH EXTERNAL GATE-TO-CATHODE RESISTANCE 2N2322-29 (C5 SERIES) ONLY $0,000 100,000 19 T T T T T NOTES: (1) 6 VOLTS ANODE VOLTAGE (2) 1000 OHMS GATE CIRCUIT RESISTANCE. 09 | J uaximum 08 o7 Ke 06 IM ost TYPICAL 04 MINIMUM > | PN 03 _ mL | 0.2 a 0.1 O60 40 2 20. +40 60 80 100 {20 JUNCTION TEMPERATURE - C VARIATION OF GATE TRIGGER VOLTAGE WITH TEMPERATURE FOR 2N2322-29 (C5 SERIES) ONLY JUNCTION TO AMBIENT. LEAD MOUNTED IN FREE CONVECTION AMBIENT. DEVICE NOT FASTENED TO EXTERNAL HEATSINK. ie) 10 100 TIME IN SECONDS 17. MAXIMUM TRANSIENT THERMAL IMPEDANCE (DIAMOND BASE) 657C5 SERIES "50 NOTES:(1) RESISTIVE OR INDUCTIVE LOAO,50 TO 400 Hz (2) RATINGS DERIVED FOR 0.01 WATTS AVERAGE \20 GATE POWER DISSIPATION 4 A (3) CELL LEAD MOUNTED IN FREE CONVECTION 110 AMBIENT. DEVICE NOT FASTENED TO AN 4 EXTERNAL HEAT SINK 100. N vol AW o WS ot + WAN \\ 60 \. or 1ao* \ 50 \. \ LAO se \ . \AAAAT NY \ KN MAXIMUM ALLOWABLE AMBIENT TEMPERATURE-*C 20 =39 o shor oF GONDUCTION ANGLE = 30' 60" 90 | 120 180: oc 10 | oO2 o4 os as 1.0 2 AVERAGE ON-STATE CURRENT-AMPERES 18. MAXIMUM ALLOWABLE AMBIENT TEMPERATURE FOR HALF WAVE RECTIFIED SINE WAVE OF CURRENT (DIAMOND BASE) . Pil Titi id (20 NOTES: (I) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 2 0 (2) RATINGS DERIVED FOR 0.01 WATTS AVERAGE b GATE POWER DISSIPATION. = (3) CELL LEAD MOUNTED IN FREE CONVECTION & [00 AMBIENT. DEVICE NOT FASTENED TO AN WY EXTERNAL HEAT SINK, & 90 = I F 80 (4) t/T DUTY CYCLE t+ : 5 VANS re & 70 N - 3 \ wy 80 q any 7 HANS o 3 a0 NANA z \IAANA Z 30 x = 20 = DUTY CYCLE=2 6 14 1/3 V2| 10 | % 0.2 04 0:6 3.8 1.0 12 14 16 AVERAGE ON-STATE CURRENT-AMPERES 20. MAXIMUM ALLOWABLE AMBIENT TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM (DIAMOND BASE) OUTLINE DRAWING {1) This zone is controlled for automatic han- ling. The variation in actual diameter within this zone shall not exceed .010. (2) Measured from max. diameter of the actual device. (3) The specified lead diameter applies in the zone between .0S0 and .250 from the base Seat, Between 250 and 1.5 maximum of 0271 diameter is hesd. Outside of these the lead diameter is not controled. Leads may be inserted, without damage in 031 holes while device enters 371 hole con- centric with lead hole circle. (4) #4-40 screw, st'n steel ,. tong (5) 120 bole (#31 drill 1 {6} Int toath lockwasher, st'n steel ' {7) #4-40 out, st'n see! | I 045 max See min 2002.10 DIA tap = j) XZ? wr see 0% & 004 370 ax 335 ~0 MAX i 1500 _| w feo +008 4 =.001 TYPICAL (8) #2-56 screw, st'n steel % long (9) Shoulder washer, vulcanized fiber (10) Mica insulator, .003 thick (11) 0935 hole (#42 drill) 12) 42-56 nut, st'n steel All dimensions in inches CONFORMS TO JEDEC 10-5 GUTLINE 130 120 oO 80 (1) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz {2) CASE TEMPERATURE MEASURED AT TAB ON 70 CELL HEADER FLANGE. 60 RATINGS DERIVED FOR 0.0! WATTS AVERAGE GATE POWER DISSIPATION. 50 40 30 MAXIMUM ALLOWABLE CASE TEMPERATURE-C 20 0 0.2 0.4 06 0.8 1.0 L2 14 16 AVERAGE ON-STATE CURRENT-AMPERES 19. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR HALF WAVE RECTIFIED SINE WAVE OF CURRENT (DIAMOND BASE) 130 | | (20 oh p no Sos + w Ns ae L 100 DUTY CYCLE 1/12 vel Tivat 73 72 2 = 30 Ww a & 80 F NOTES, (I) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz w > (2) CASE TEMPERATURE MEASURED AT TAB ON g 70 CELL HEADER FLANGE. 6 3) RATINGS DERIVED FOR 0.01 WATTS AVERAGE 60 GATE POWER DISSIPATION. a WY), g 5 T=DUT E S a ZA VT=DUTY CCL! < 40 T = 7 = 30 Pt a = 20 10 % o2 04 06 08 10 12 4 16 AVERAGE ON-STATE CURRENT~AMPERES 21. MAXIMUM. ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM (DIAMOND BASE) & e & 430 t It TYPICAL DIAMOND BASE STANOARD MOUNTING DIAMOND BASE INSULATED MOUNTING 658