tm
©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
April 2007
FFPF10H60S Rev. A
FFPF10H60S Hyperfast 2 Rectifier
FFPF10H60S
Hyperfast 2 Rectifier
Features
High Speed Switching ( trr=25ns(Typ.) @ IF=10A )
High Reverse Voltage and High Reliability
Avalanche Energy Rated
Low Forward Voltage( VF=2.1V(Typ.) @ IF=10A )
Applications
General Purpose
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
10A, 600V Hyperfast 2 Rectifier
The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @
IF=10A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
1. Cathode 2. Anode
TO-220F-2L 1
1. Cathode 2. Anode
2
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 85 °C10A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 100 A
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Max Units
RθJC Maximum Thermal Resistance, Junction to Case 3.4 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
F10H60S FFPF10H60STU TO-220F - - 50
TC = 25°C unless otherwise note d
TC = 25°C unless otherwise noted
Information
2www.fairchildsemi.com
FFPF10H60S Rev. A
FFPF10H60S Hyperfast 2 Rectifier
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
Parameter Conditions Min. Typ. Max Units
VFM1IF = 10A
IF = 10A TC = 25 °C
TC = 125 °C-
-2.1
-2.5
2.2 V
V
IRM1VR = 600V
VR = 600V TC = 25 °C
TC = 125 °C-
--
-1
2mA
mA
trr IF =1A, di/dt = 100A/µs, VCC = 30V
IF =10A, di/dt = 50A/µs, VCC = 390V
IF =10A, di/dt = 200A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
-
-
-
25
21
35
40
-
ns
ns
ns
ta
tb
Qrr
IF =10A, di/dt = 50A/µs, VCC = 390V TC = 25 °C
TC = 25 °C
TC = 25 °C
-
-
-
15
10
9.0
-
-
-
ns
ns
nC
WAVL Avalanche Energy (L = 40mH) 20 - - mJ
3www.fairchildsemi.com
FFPF10H60S Rev. A
FFPF10H60S Hyperfast 2 Rectifier
Typical Performance Characteristics TC = 25°C unless otherwise noted
Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current
Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
Figure 5. Typical Reverse Recovery Cur rent Figure 6. Forward Current Deration Curve
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
0.1
1
10
100
TC=75oC
TC=25oC
FPRWARD CURRENT, IF [A]
FORWA RD VOLTA G E, VF [V]
TC=125oC
0 100 200 300 400 500 600
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
TC = 25oC
TC = 75oC
REVERSE CURRENT, IR [A]
REVERSE VOLTAG E, VR [V]
TC = 125oC
1 10 100 1000
0
10
20
30
40
50
60
70
JUNCTION CAPACITANCE, CJ [pF]
REVERSE VOLTAGE, VR [V]
f = 1MHz
50 100 150 200 250 300 350 400450500
0
10
20
30
40
50
60
70
80
90
100
TC = 125oC
TC = 75oC
REVERSE RECOVERY TIME, trr [ns]
di/dt [A/µs]
TC = 25oC
IF = 10 A
50 100 150 200 250 300 350 400450500
0
1
2
3
4
5
6
7
8
9
10
TC = 25oC
TC = 75oC
REVERSE RECOVERY CURRENT, Irr [A]
di/dt [A/ µs]
TC = 125oC
IF = 10A
50 60 70 80 90 100 110 120 130 140 150
0
2
4
6
8
10
12
14
16
AVERAGE FORWARD CURRENT, IF(AV) [A]
CASE TEMPERATURE, TC [oC]
DC
4www.fairchildsemi.com
FFPF10H60S Rev. A
FFPF10H60S Hyperfast 2 Rectifier
Mechanical Dimensions
Dimensions in Millimeters
TO-220F 2L
2.54
±0.2
0
0.80
±0.10
0.35
±0.10
2.76
±0.2
0
MAX1.47
(1.00x45°)
(0.70)
3.30
±0.10
15.87
±0.20
(1.80)
(6.50)
6.68
±0.20
15.80
±0.20
9.75
±0.30
12.00
±0.20
4.70
±0.20
10.16
±0.20
9.40
±0.20
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]0.50
+0.10
–0.05
tm
Rev. I24
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Advance Information Formative or In Design This datasheet contains the design specifications for product development.
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changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
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