PD-91716D IRFE9130 JANTX2N6849U JANTXV2N6849U 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET (R) TRANSISTORS REF: MIL-PRF-19500/564 Product Summary Part Number BVDSS RDS(on) ID IRFE9130 -100V 0.30 -6.5A LCC-18 Description Features The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Designed to be a close replacement for the TO39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. IR HiRel has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol ID1 @ VGS = -10V, TC = 25C Value Parameter Continuous Drain Current -6.5 ID2 @ VGS = -10V, TC = 100C Continuous Drain Current -4.1 Units A IDM @ TC = 25C Pulsed Drain Current -25 PD @ TC = 25C Maximum Power Dissipation 25 W Linear Derating Factor 0.20 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 165 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt -6.5 2.5 -5.5 mJ A IAR EAR dv/dt TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 Package Mounting Surface Temp. 300 (for 5 s) Weight 0.42 (Typical) mJ V/ns C g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Min. Typ. Max. Units QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time -100 --- --- --- -0.10 --- --- --- 0.30 --- --- 0.320 -2.0 --- -4.0 --- --- -25 --- --- -250 --- --- -100 --- --- 100 --- --- 34.8 --- --- 6.8 --- --- 23.1 --- --- 60 --- --- 140 --- --- 140 --- --- 140 Ls +LD Total Inductance --- 6.1 --- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 790 340 71 --- --- --- pF Zero Gate Voltage Drain Current IGSS Test Conditions V V/C VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID2 = -4.1A VGS = -10V, ID1 = -6.5A V VDS = VGS, ID = -250A VDS = -80V, VGS = 0V A VDS = -80V,VGS = 0V,TJ =125C VGS = -20V nA VGS = 20V ID1 = -6.5A nC VDS = -50V VGS = -10V VDD = -40V ID1 = -6.5A ns RG = 7.5 VGS = -10V Measured from the center of drain pad to center of source pad VGS = 0V VDS = -25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -6.5 ISM Pulsed Source Current (Body Diode) --- --- -25 VSD Diode Forward Voltage --- --- -4.3 V TJ = 25C,IS = -6.5A, VGS = 0V trr Reverse Recovery Time --- --- 250 ns TJ = 25C, IF = -6.5A, VDD -50V Qrr Reverse Recovery Charge --- --- 3.0 C di/dt = -100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Symbol Parameter Min. Typ. Max. RJC Junction-to-Case --- --- 5.0 RJ-PCB Junction-to-PC Board --- --- 19 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, Peak IL = -6.5A ISD -6.5A, di/dt -390A/s, VDD -100V, TJ 150C, Suggested RG = 7.5 Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U 100 -I D , Drain-to-Source Current (A) TOP BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 20s PULSE WIDTH TJ= 25 C 1 0.1 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -I D , Drain-to-Source Current (A) 100 1 10 10 -4.5V 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 100 TJ = 25 C TJ = 150 C 10 V DS= -50V 20s PULSE WIDTH 5 6 7 8 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TJ = 150 C 1 0.1 ID = -6.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1200 1000 Ciss 800 600 Coss 400 200 0 Crss 1 10 100 20 -VGS , Gate-to-Source Voltage (V) 1400 Fig 4. Normalized On-Resistance Vs. Temperature ID = -6.5A VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 3 10 20 30 40 Q G, Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U 100 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.1 0.5 1.0 1.5 2.0 2.5 OPERATION IN THIS AREA LIMITED BY R DS (on) 10 100s 1ms 1 10ms 0.1 0.01 1 3.0 -VSD ,Source-to-Drain Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) -ID , Drain Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 50 75 100 TC , Case Temperature 125 100 1000 Fig 8. Maximum Safe Operating Area 7.0 25 10 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 0.0 DC Tc = 25C Tj = 150C Single Pulse 150 ( C) 400 TOP BOTTOM 300 200 100 0 25 50 75 100 Starting T J, Junction Temperature Fig 9. Maximum Drain Current Vs. Case Temperature ID -2.9A -4.1A -6.5A 125 150 ( C) Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U Case Outline and Dimensions - LCC-18 www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2019-02-27 IRFE9130 JANTX2N6849U/JANTXV2N6849U IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. 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