Features
Surface Mount
Small Footprint
Alternative to TO-39 Package
Hermetically Sealed
Dynamic dv/dt Rating
Avalanche Energy Rating
Simple Drive Requirements
Light Weight
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface mount
technology. Designed to be a close replacement for the TO-
39 package, the LCC will give designers the extra flexibility
they need to increase circuit board density. IR HiRel has
engineered the LCC package to meet the specific needs of
the power market by increasing the size of the bottom source
pad, thereby enhancing the thermal and electrical
performance. The lid of the package is grounded to the
source to reduce RF interference.
Absolute Maximum Ratings
Symbol Parameter Value Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current -6.5
A
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current -4.1
IDM @ TC = 25°C Pulsed Drain Current -25
PD @ TC = 25°C Maximum Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 165 mJ
IAR Avalanche Current -6.5
A
EAR Repetitive Avalanche Energy 2.5 mJ
dv/dt Peak Diode Recovery dv/dt -5.5
V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Package Mounting Surface Temp. 300 (for 5 s)
Weight 0.42 (Typical) g
-55 to + 150
LCC-18
IRFE9130
JANTX2N6849U
JANTXV2N6849U
1 2019-02-27
Product Summary
Part Number BVDSS RDS(on) I
D
IRFE9130 -100V 0.30 -6.5A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTORS
PD-91716D
Description
For Footnotes, refer to the page 2.
International Rectifier HiRel Products, Inc.
100V, P-CHANNEL
REF: MIL-PRF-19500/564
2 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.0
RJ-PCB Junction-to-PC Board ––– ––– 19 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.30 VGS = -10V, ID2 = -4.1A
––– ––– 0.320 VGS = -10V, ID1 = -6.5A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -80V, VGS = 0V
––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge ––– ––– 34.8
nC
ID1 = -6.5A
QGS Gate-to-Source Charge ––– ––– 6.8 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 23.1 VGS = -10V
td(on) Turn-On Delay Time ––– ––– 60
ns
VDD = -40V
tr Rise Time ––– ––– 140 ID1 = -6.5A
td(off) Turn-Off Delay Time ––– ––– 140 RG = 7.5
tf Fall Time ––– ––– 140 VGS = -10V
Ls +LD Total Inductance ––– 6.1 ––– nH Measured from the center of drain pad to
center of source pad
Ciss Input Capacitance ––– 790 –––
pF
VGS = 0V
Coss Output Capacitance ––– 340 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 71 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -6.5
ISM Pulsed Source Current (Body Diode) ––– ––– -25
VSD Diode Forward Voltage ––– ––– -4.3 V TJ = 25°C,IS = -6.5A, VGS = 0V
trr Reverse Recovery Time ––– ––– 250 ns TJ = 25°C, IF = -6.5A, VDD ≤ -50V
Qrr Reverse Recovery Charge ––– ––– 3.0 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, Peak IL = -6.5A
ISD -6.5A, di/dt -390A/µs, VDD -100V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%
3 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
1
10
100
4 5 6 7 8 9
V = -50V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-6.5A
1 10 100
0
200
400
600
800
1000
1200
1400
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Char ge ( nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-6.5A
V =-20V
DS
V =-50V
DS
V =-80V
DS
4 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
100s
DC
OPERATION IN THIS AREA LIMITED
BY R DS(on)
1ms
0.1
1
10
0.5 1.0 1.5 2.0 2.5 3.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-2.9A
-4.1A
-6.5A
5 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
6 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - LCC-18
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7 2019-02-27
IRFE9130
JANTX2N6849U/JANTXV2N6849U
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
