Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
MAPR-002729-170M00
1
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1
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 250mA BVCES 65 - V
Collector-Emitter Leakage Current VCE = 40V ICES - 10 mA
Thermal Resistance Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz RTH(JC) - 0.35 °C/W
Output Power Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz POUT 170 - W
Power Gain Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz GP 8.5 - dB
Collector Efficiency Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz C 40 - %
Input Return Loss Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz RL - -10 dB
Load Mismatch Tolerance Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz VSWR-T - 2:1 -
Load Mismatch Stability Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz VSWR-S - 1.5:1 -
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 27 A
Power Dissipation @ +25°C PTOT 500 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
Outline Drawing
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
MAPR-002729-170M00
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Typical RF Performance
F (GHz) ZIF (Ω) ZOF (Ω)
2.7 5.1 - j5.1 1.8 - j2.1
2.8 5.2 - j4.7 1.8 - j1.8
2.9 5.3 - j4.3 1.8 - j1.4
RF Test Fixture Impedance
Gain vs. Frequency Collector Efficiency vs. Frequency
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(2:1)
2.7 24 224 9.69 12.1 51.4 -15.6 S P
2.8 24 217 9.56 11.3 53.4 -14.7 S P
2.9 24 196 9.11 10.3 53.0 -10.6 S P
8.0
8.5
9.0
9.5
10.0
2.70 2.75 2.80 2.85 2.90
Freq (GHz)
Gain (dB)
35
40
45
50
55
2.70 2.75 2.80 2.85 2.90
Freq (GHz)
Efficiency (%)
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
MAPR-002729-170M00
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Test Fixture Circuit Dimensions
Test Fixture Assembly
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
MAPR-002729-170M00
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
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