PHP18NQ10T,127 - NEXPERIA - Datasheet.Live

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS techn ology. This product is designed and qualifie d for use in

computing, communications, consumer and industria l applications only.

1.2 Features and benefits

Higher operating power due to low

thermal resistance

Low conduction losses due to low

on-state resistance

Suitable for high frequency

applicat ion s du e to fast swit ch ing

characteristics

1.3 Applications

DC-to-DC converters Switched-mode power supplies

1.4 Quick reference data

PHP18NQ10T

N-channel TrenchMOS standard level FET

Rev. 02 — 16 December 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 100 V

IDdrain current Tmb =25°C; V

GS =10V --18A

Ptot total power dissipation Tmb =25°C --79W

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=9A;

Tj=25°C - 8090mΩ

Dynamic characteristics

QGD gate-drain charge VGS =10V; I

D=18A;

VDS =80V; T

j=25°C -8-nC

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 2 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

2. Pinning information

3. Ordering information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT78 (T O - 22 0 A B )

2 D drain

3Ssource

mb D mounting base; connected to drain

bb076

Table 3. Ordering informatio n

Type number Package

Name Description Version

PHP18NQ10T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB SOT78

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Product data sheet Rev. 02 — 16 December 2010 3 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 100 V

VDGR drain-gate voltage Tj≥25 °C; Tj≤175 °C; RGS =20kΩ- 100 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb =100°C - 13 A

VGS =10V; T

mb =25°C - 18 A

IDM peak drain current pulsed; Tmb =25°C - 72 A

Ptot total power dissipation Tmb =25°C - 79 W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Source-drain diode

ISsource current Tmb =25°C - 18 A

ISM peak source current pulsed; Tmb =25°C - 72 A

Ava lanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy VGS =10V; T

j(init) =25°C; I

D=11A;

Vsup ≤25 V; unclamped; tp= 100 µs;

RGS =50Ω

-70mJ

IAS non-repetitive avalanche current Vsup ≤25 V; VGS =10V; T

j(init) =25°C;

RGS =50Ω; unclamped -18A

Fig 1. Normalized total power dissipation as a

function of mounting base temperature Fig 2. Normalized continuo us drain current as a

function of mounting ba s e te mp e rature

100

(%)

(°C)

0 20015050 100

003aae629

100

(%)

(°C)

0 20015050 100

003aae630

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Product data sheet Rev. 02 — 16 December 2010 4 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

Tmb = 25 °C; IDM is single pulse unclamped inductive load

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage Fig 4. Single-shot avalanche rating ; avalanche

current as a function of avalanche period

VDS (V)

110

102

003aae631

102

IDM

(A)

10−1

RDS(on) = VDS / ID

D.C.

tp = 10 μs

100 ms

1 ms

10 ms

100 μs

003aae643

(ms)

−3

10110

−2

−1

(A)

−1

25 °C

prior to avalanche = 150 °C

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 5 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting

base --1.9K/W

Rth(j-a) therma l resistance from junction to ambient i n free air - 60 - K/W

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aae632

−1

th(j-mb)

(K/W)

−2

(s)

−6

110

−1

−2

−5

−3

−4

single pulse

0.2

D = 0.5

0.1

δ =

0.05

0.02

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 6 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=0.25mA; V

GS =0V; T

j= -55 °C 89 - - V

ID=0.25mA; V

GS =0V; T

j= 25 °C 100 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj=-55°C --6V

ID=1mA; V

DS =V

GS; Tj= 175 °C 1 - - V

ID=1mA; V

DS =V

GS; Tj=25°C 234V

IDSS drain leakage current VDS =100 V; V

GS =0V; T

j= 175 °C - - 500 µA

VDS =100V; V

GS =0V; T

j= 25 °C - 0.05 10 µA

IGSS gate leakage current VGS =10V; V

DS =0V; T

j= 25 °C - 10 100 nA

VGS =-10V; V

DS =0V; T

j= 25 °C - 10 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=9A; T

j= 175 °C - - 243 mΩ

VGS =10V; I

D=9A; T

j= 25 °C - 80 90 mΩ

Dynamic characteristics

QG(tot) total gate charge ID=18A; V

DS =80V; V

GS =10V;

Tj=25°C -21-nC

QGS gate-source charge - 4 - nC

QGD gate-drain charge - 8 - nC

Ciss input capacitance VDS =25V; V

GS = 0 V; f = 1 MHz;

Tj=25°C - 633 - pF

Coss output capacitance - 103 - pF

Crss reverse transfer capacitance - 61 - pF

td(on) turn-on delay time VDS =50V; R

L=2.7Ω; VGS =10V;

RG(ext) =5.6Ω; Tj=25°C -6-ns

trrise time - 36 - ns

td(off) turn-off delay time - 18 - ns

tffall time - 12 - ns

LDinternal drain inductance measured from drain lead to centre of

die ; Tj=25°C -4.5-nH

measured from tab to centre of die ;

Tj=25°C -3.5-nH

LSinternal source inductance measured from source lead to source

bond pad ; Tj=25°C -7.5-nH

Source-drain diode

VSD source-drain voltage IS=18A; V

GS =0V; T

j= 25 °C - 0.92 1.2 V

trr reverse recovery time IS=18A; dI

S/dt = -100 A/µs; VGS =0V;

VDS =25V; T

j=25°C -55-ns

Qrrecovered charge - 135 - nC

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Product data sheet Rev. 02 — 16 December 2010 7 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

Tj = 25 °C Tj = 25 °C

Fig 6. Outp ut characteristics: drain current as a

function of drain-source volta ge; typ ical values Fig 7. Dr ain-source on-state resistance as a function

of drain current; typical values

VDS > ID x RDSon VDS > ID x RDSon

Fig 8. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 9. Forward transcond uctance as a function of

drain current; typical values

ID = 1 mA; VDS = VGS

Fig 10. Normalized drain-source on-state resistance

factor as a function of junction temperature Fig 11. Gate-source threshold voltage as a functio n of

junction temperature

(A)

VDS (V)

0 2.01.60.8 1.20.4

003aae633

VGS = 10 V

5 V

5.2 V

5.4 V

6 V

8 V

4.4 V

4.8 V

4.6 V

0.08

0.12

0.04

0.16

0.20

RDS(on)

(Ω)

ID (A)

020168124

003aae634

VGS (V) = 10

4.6 5 5.4

4.8 5.2

(A)

VGS (V)

0108462

003aae635

Tj = 25 °C

Tj = 175 °C

gfs

(S)

ID (A)

020168124

003aae636

Tj = 25 °C

Tj = 175 °C

1.3

2.1

2.9

DS(on)

(Ω)

0.5

003aae637

(°C)

−60 18010020

0.5

3.5

2.5

1.5

4.5

GS(th)

(V)

003aae638

(°C)

−60 18010020

maximum

typical

minimum

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Product data sheet Rev. 02 — 16 December 2010 8 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

Tj = 25 °C; VDS = VGS VGS = 0 V ; f = 1 MHz

Fig 12. Sub-threshold drain cu rrent as a function of

gate-source voltage Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Tj = 25 °C; ID = 18 A VGS = 0 V

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values

003aae639

(V)

054231

−4

−5

−2

−3

−1

(A)

−6

maximum

typical

minimum

(V)

−1

101

003aae640

(pF)

iss

oss

rss

(V)

003aae641

(nC)

0302010

= 80 VV

= 20 V

(A)

003aae642

SDS

(V)

0 1.20.80.4

= 25 °CT

= 175 °C

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 9 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

7. Package outline

Fig 16. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT7

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

L1(1)

b1(2)

(3×)

b2(2)

(2×)

b(3×)

L2(1)

mounting

base

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 10 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sh eet status Change notice Supersedes

PHP18NQ10T v.2 20101216 Product data sheet - PHB_PHD_PHP18NQ10T v.1

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Type number PHP18NQ10T separated from data sheet PHB_PHD_PHP18NQ10T v.1.

PHB_PHD_PHP18NQ10T v.1 19990801 Product specification - -

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 11 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product stat us of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short dat a sheet, the

full data sheet shall pre va il.

Product specifica t io n — The information and dat a provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is be lieved to

be accurate and reliable. However, Nexperia does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associa ted with their

applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo mer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specifica tion.

Product [short] data sheet Production This document contains the product specification.

PHP18NQ10T All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 16 December 2010 12 of 13

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It i s neither qua lified nor test ed

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Nexperia PHP18NQ10T

N-channel TrenchMOS standard level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10 Contact information. . . . . . . . . . . . . . . . . . . . . .12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

16 December 2010