MMBTA14 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R206-038.B
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Dissipation (TC=25°C) PC 350 mW
Collector Current IC 500 mA
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanentl y damaged.
Absolute maximum ratings are stress ratings only and functional devic e operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCES I
C=100µA, IB=0 30 V
Collector CutOff Current ICBO V
CB=30V, IE=0 100 nA
Emitter CutOff Current IEBO V
EB=10V, IC=0 100 nA
DC Current Gain hFE V
CE=5V, IC=100 mA (Note) 20000
Collector-Emitter Saturation Voltage VCE(SAT) I
C=100mA, IB=0.1mA (Note) 1.5 V
Base-Emitter on Voltage VBE(ON) V
CE=5V, IC=100mA (Note) 2.0 V
Current Gain Bandwidth Product fT V
CE=5V, IC=10mA, f=100MHz 125 MHz
Note: Pulse Width<300µs, Duty Cycle≤2%