2SB1450 / 2SD2199 Ordering number : EN3150A SANYO Semiconductors DATA SHEET 2SB1450 / 2SD2199 PNP / NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Features * * * Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment. - High density surface mount applications. - Small size of 2SB1450/2SD2199-applied equipment. Low collector-to-emitter saturation voltage. Highly resistant to breakdown because of wide ASO. Specifications ( ) : 2SB1450 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (--)60 Collector-to-Emitter Voltage VCBO VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V IC ICP (--)7 A (--)12 A 1.65 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V 40 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2407FA TI IM TC-00000977 / 41504TN (PC) / O1598HA (KT) / 7039MO, TS No.3150-1/4 2SB1450 / 2SD2199 Continued from preceding page. Parameter Symbol hFE1 hFE2 VCE=(--)2V, IC=(--)1A VCE=(--)2V, IC=(--)5A Collector-to-Base Breakdown Voltage fT VCE(sat) V(BR)CBO VCE=(--)5V, IC=(--)1A IC=(--)4A, IB=(--)0.4A IC=(--)1mA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IC=(--)1mA, RBE= IE=(--)1mA, IC=0A Storage Time DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Fall Time Ratings Conditions min typ Unit max 70* 280* 30 10 MHz (--)0.4 V (--)60 V (--)50 V (--)6 V See specified Test Circuit. 0.2 s tstg See specified Test Circuit. (0.7)0.9 s tf See specified Test Circuit. (0.1)0.3 s * : The 2SBB1450 / 2SD2199 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Package Dimensions unit : mm (typ) 7001-002 Switching Time Test Circuit IB1 PW=20s tr, tf15ns 0.2 RB 1 VR 100 INPUT 1.3 3.0 2 1.35 1.4 8.8 1.5MAX 9.9 50 1 OUTPUT IB2 4.5 10.2 RL + + 1F 1F VBE= --5V 3 VCC=20V 0.8 0.4 2.55 2.7 2.55 2.55 IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. 0 to 0.3 1.2 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : SMP-FD IC -- VCE Collector Current, IC -- A A --1 mA mA A A 00 00m --8 --6 --400m 10 mA --8 --200 --6 --100mA --2 0 --80mA --60mA --40mA --20mA --4 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Collector-to-Emitter Voltage, VCE -- V 2SD2199 mA 0 40 200mA 8 100mA 6 80mA 60mA 4 40mA 20mA 2 --10mA IB=0mA 0 60 0 --10 IC -- VCE 12 1A 2SB1450 Collector Current, IC -- A --12 --1.4 ITR09695 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V 1.4 ITR09696 No.3150-2/4 2SB1450 / 2SD2199 IC -- VBE --12 IC -- VBE 12 2SD2199 VCE=2V 2SB1450 VCE=--2V 10 Collector Current, IC -- A Collector Current, IC -- A --10 --8 --6 --4 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE -- V ITR09697 2SD2199 VCE=2V 3 2 1.4 ITR09698 hFE -- IC 5 2SB1450 VCE=--2V 3 2 DC Current Gain, hFE DC Current Gain, hFE 4 0 --1.4 hFE -- IC 5 100 7 5 3 2 10 100 7 5 3 2 10 7 5 7 3 3 5 2 2 3 2 5 7 --0.1 3 2 5 7 --1.0 3 2 2 5 7 --10 ITR09701 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 IC =2 /IB IC --0.1 0 0 =1 B I / 7 5 5 7 0.1 2 3 2 5 7 1.0 3 2 5 7 10 ITR09702 VCE(sat) -- IC 2SD2199 3 3 --1.0 3 5 2SB1450 2 2 Collector Current, IC -- A VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 6 2 --2 0 8 2 1.0 7 5 3 2 0 0.1 7 5 IC 3 =2 / IB IC 0 =1 / IB 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 0.01 5 7 --10 2 ITR09703 Collector Current, IC -- A s ms 3 2 --0.1 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 --100 IT13047 2SD2199 100ms IC=7A 3 2 1.0 7 5 3 2 Tc=25C 1ms to 100ms: Single pulse 5 ASO n ion 5 7 5 5 7 10 2 ITR09704 tio t era 7 3 era op --1.0 2 op DC 2 5 7 1.0 s 1m s m 10 10 3 3 DC Collector Current, IC -- A s 1m 0m Collector Current, IC -- A 10 5 2 ICP=12A 10 IIC C=--7A 5 7 0.1 2 2SB1450 ICP=--12A 7 3 Collector Current, IC -- A ASO 2 --10 2 0.1 Tc=25C 1ms to 100ms: Single pulse 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- V 7 100 IT13048 No.3150-3/4 2SB1450 / 2SD2199 PC -- Ta 1.65 1.6 1.2 No he at sin k 0.8 0.4 0 0 20 40 60 80 100 PC -- Tc 50 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 2.0 120 Ambient Temperature, Ta -- C 140 160 IT13049 40 30 20 10 0 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT13050 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No.3150-4/4