Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design High Voltage Operating Temperature: -65 to + 150C Storage Temperature: -65 to + 200C Power Dissipation (Derate Linearly to Zero @ 175C): 250 mW Typical Lead Strength: 8 Grams Pull Description Alpha's Silicon Planar and Mesa Beam Lead PIN diodes are surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. They are designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting use in assemblies with some degree of moisture sealing. A layer of glass provides increased mechanical strength. Alpha's beam lead PIN diodes are ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators. Electrical Specifications at 25C Low Capacitance Planar Beam Lead Diodes Part Number DSG6405-000 4-16 Breakdown Voltage @ 10 A (V) Capacitance Total @ 50 Volts, 1 MHz (pF) Series Resistance @ 20 mA 100 MHz (Ohms) Minority Carrier Lifetime IF = 10mA, IR = 6mA (ns) Reverse Recovery Time IF = 20 mA, VR = 10V, 90% Recovery (ns) Min. Typ. Typ. Max. Typ. Max. Typ. Typ. Max. 100 125 0.017 0.02 4.5 6.0 200 20 35 Alpha Industries * * Fax Outline Drawing Number 389-004 * E-mail * Visit our web site: Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Performance Data for DSG6405-000 10K RF Resistance (Ohms) Forward Current (mA) 100 10 1 0.1 1K 100 10 0.01 1 0.25 0.50 0.75 1.00 Forward Voltage (V) 1.25 0.1 1 10 Forward Bias Current (mA) Figure 1. Typical Forward Characteristics Figure 3. Typical RF Resistance vs. Forward Bias Current 0.08 Isolation Loss (dB) Capacitance (pF) 0.04 1 MHz 45 40 35 30 25 20 15 10 5 0 (10 Volts) 0.75 0.60 0.45 0.30 0.15 (20 mA) Above 1 GHz Insertion Loss (dB) 0.06 0.02 100 0 0 10 20 Reverse Voltage (Volts) 0 30 Figure 2. Typical Capacitance vs. Reverse Bias Voltage 5 15 18 20 10 Frequency (GHz) 25 30 Figure 4. Typical Insertion Loss and Isolation Characteristics Electrical Specifications at 25C Planar Beam Lead Diodes Part Number DSG6474-000 Voltage Breakdown @ 10 mA Series Resistance (Ohms) (From Insertion Loss @ 3 GHz, 50 mA)1 Junction Capacitance CJ (pF) Minority Carrier Lifetime (ns) Max. RF Switching Time TS (ns)2 Min. Max. 200 4.0 0.02 25 250 Outline Drawing Number Typ. 169-001 Available through distribution. 1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot. All diodes are characterized for capacitance at -50 Volts, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements. 2. TS measured from RF transition, 90% to 10%, in series configuration. Alpha Industries * * Fax * E-mail * Visit our web site: 4-17 4 Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Performance Data for DSG6474-000 SPDT isolation curves are shown in Figure 6 and insertion loss in Figures 7 and 8. With proper transitions and bias circuits, VSWR is better than 2.0 to 1 through 18 GHz. 38 36 32 Isolation Loss (dB) Figures 5 and 6 show a single pole double-throw 1-18 GHz switch these diodes are mounted an Alumina, Duriod, or Teflon fiberglass 50 ohm microstrip circuits. Typical bonding methods include thermal compression bonding, parallel gap welding, and soldering. 28 24 DSG6474-000 20 16 12 8 0 Switching Considerations 0 The typical minority carrier lifetime of the DSG6474 diodes is 100 ns. With suitable drivers, the individual diodes can be switched from high impedance (off) to low RS (on) in about 10 ns. Beam Lead Pin Duriod Substrate CCCCCCCC EE EE CCCCCCCC CC EE EE CCCCCCCC CC EE CC EE 2 4 6 8 10 12 14 16 18 Frequency (GHz) Figure 7. Isolation vs. Frequency, SPDT DSG6474-000 50 Ohm Glass Bead 50 Ohm Transmission Line Connecting Lead 2.5 Figure 5. Typical SPDT Circuit Arrangement Beam Lead Pin 0.005" Preferred Beam Lead Orientation CCCCCCCCCC CCCCCCCCCC CCCCCCCCCC Metal Conductor Alpha Industries * 1.0 DSG6474-000 0 0 Duroid * Fax 1.5 0.5 Figure 6. Typical Beam Lead Mounting 4-18 Insertion Loss (dB) 2.0 10 50 Bias Current (mA) 100 Figure 8. Diode Insertion Loss vs. Bias SPST, 18 GHz DSG6474-000 * E-mail * Visit our web site: Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Power Handling for DSG6474-000 Beam lead diodes are not suitable for high power operation because of high internal thermal impedance of about 600C/Watt. 1.4 1.2 0.8 0.6 At this frequency, the required reverse voltage is almost equal to the peak RF voltage; at high frequency, the bias can be reduced somewhat. Experimentation is necessary. 0.4 0.2 0 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 100 Figure 9. Diode Insertion Loss vs. Frequency SPST, 50 mA Bias DSG6474-000 With maximum CW power dissipation of 250 mW, the DSG6474-000 diodes are normally rated at 2 Watt CW with linear derating between 25C and 150C. Figure 10 presents data on CW power handling as a function of bias and frequency. 0.1V 2000 CW Power (Milliwatts) 60 40 20 0 0 10 50 Reverse Bias (Volts) 100 Figure 11. Peak Power Handling, SPST, 1 GHz DSG6474-000 5000 0.4V 80 Peak Power Watts Isolation Loss (dB) 1.0 For pulsed operation, the total RF plus bias voltage must not exceed the rated breakdown. Alpha has made high power tests at 1 GHz with 1s pulses, 0.001 duty, with 200V diodes. With 50 mA forward bias, there is no increase in insertion loss over the 0 dBm level with a peak power input of 50 watts. In the open state, reverse bias voltage is required to keep the diode from "rectifying," with resultant decrease in isolation and possible failure. Figure 11 shows allowed peak power versus reverse bias at 1 GHz. 1000 10% increase in small signal insertion loss when biased at 50 mA. 500 200 100 10% decrease in small signal insertion loss when biased at -1V/-4V. 50 20 0.1 0.2 0.5 1.0 2.0 5.0 Frequency (GHz) 10 20 Figure 10. Typical Series Switch Behavior at Room Temperature and Biased at 50ma/1V/4V DSG6474-000 Alpha Industries * * Fax * E-mail * Visit our web site: 4-19 4 Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Mesa Beam Lead Diode Specifications Voltage Breakdown @ IR < 10 mA (V) Capacitance Total 50V, 1MHz (pF) Max. DSM6380-000 DSM6381-000 Part Number 50 mA, 100 MHz 10 mA, 100 MHz CLT IF = 10 mA, mA IR = 6 mA (ns) Max. Max. Typ. Typ. 100 0.025 3.5 4.5 40 389-003 150 0.025 4.0 5.0 50 389-003 0.0251 3.52 -- 25 389-003 Series Resistance (Ohms) O tli Outline Drawing Number Fast Beam Lead Pin Diodes Low-Loss Ultra-Fast Beam Lead PIN Diodes DSM6361-000 60 Available through distribution. 1. Capacitance Total @ 10 Volts, 1 MHz, pF, Max. 2. Series Resistance @ 10 mA, Ohms, Max., 100 MHz. Part Number Voltage Breakdown @ 10 A, Reverse Current Min. Series Resistance @ 50 MHz, 50 mA Typ. Typ. Max. Capacitance Total @ -10V, 1 MHz Lifetime (ns) Switching Time (ns) Typ. Max. Typ.1 Typ.2 Video Recovery Time (ns)2 0.12 0.15 30 5 2 Outline Drawing Number 389-003 Ultra Low Resistance High-Speed Beam Lead PIN Diodes DSM6356-000 30 50 1.2 1.5 1. IF = 10mA, I = 6mA, recovery to 3 mA. 2. Video recovery time at 2 GHz from IF = 10mA to VR = 10V, from 100% to 10% in series configuration. Video reverse recovery time from IF = 10mA to IR = 2mA, with VR = 10mV. 0 0.3 5 Attenuation (dB) Time (ns) 3 10 1.0 Mesa Beam Lead 30 100 300 Conventional Beam Lead 10 Chip 15 20 VR = 40 Volts Figure 12. Switching Time Data 4-20 Alpha Industries * * Fax * E-mail * Visit our web site: Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Typical Characteristics for DSM6380-000 and DSM6381-000 1 0.1 45 40 35 30 25 20 15 10 5 0 (10 Volts) 0.01 0.75 0.60 0.45 0.30 0.15 (10 mA) DSM6381-000 DSM6380-000 0.001 0 2 4 6 8 Forward Voltage (V) 5 0 10 Figure 13. Typical Forward Characteristics of the DSM6380-000 15 1820 10 Frequency (GHz) 25 Insertion Loss (dB) 10 Isolation (dB) Forward Current (mA) 100 30 Figure 15. Typical Isolation and Insertion Loss Characteristics of the DSM6380-000/6381-000 100 RF Resistance (Ohms) Capacitance (pF) 20 15 1 MHz 0.05 0.04 0.03 0.02 Above 1 GHz 0.01 10 DSM6381-000 DSM6380-000 1 1 1 0 10 20 Reverse Voltage (Volts) 30 Figure 14. Typical Capacitance vs. Reverse Voltage for DSM6380-000 Alpha Industries * * Fax 1 10 Forward Bias Current (mA) 100 Figure 16. Typical RF Resistance vs. Forward Bias Current for DSM6380-000 and DSM6381-000 * E-mail * Visit our web site: 4-21 4 Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series 0.75 0.60 0.45 0.30 0.15 (10 mA) DSM6361-000 0 5 15 18 20 10 Frequency (GHz) 25 30 RF Resistance (Ohms) 100 45 40 35 30 25 20 15 10 5 0 Insertion Loss (dB) Isolation (dB) Typical Characteristics for DSM6361-000 10 DSM6361-000 1 1 1 Figure 17. Typical Isolation and Insertion Loss Characteristics of the DSM6361-000 1 10 Forward Bias Current (mA) 100 Figure 19. Typical RF Resistance vs. Forward Bias Current for DSM6361-000 Capacitance (pF) 20 15 0.06 1 MHz 0.05 0.04 0.03 0.02 Above 1 GHz 0.01 0 10 20 Reverse Voltage (Volts) 30 Figure 18. Typical Capacitance vs. Reverse Voltage for DSM6361-000 4-22 Alpha Industries * * Fax * E-mail * Visit our web site: Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Typical Characteristics for DSM6356-000 0.20 10 Capacitance (pF) Forward Current (mA) 100 1 0.1 DSM6356-000 0.01 0.15 DSM6356-000 1 MHz Above 1 GHz 0.10 0.001 0 0.2 0.4 0.6 0.8 Forward Voltage (V) 0.07 1.0 0 Figure 20. Typical Forward Characteristics 10 20 Reverse Voltage (Volts) 30 4 Figure 22. Typical Capacitance vs. Reverse Voltage RF Resistance (Ohms) 100 10 DSM6356-000 1 1 1 1 10 Forward Bias Current (mA) 100 Figure 21. Typical RF Resistance vs. Forward Bias Current Alpha Industries * * Fax * E-mail * Visit our web site: 4-23 Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Outline Drawings 389-003 169-001 0.009 min 0.0115 max 0.009 min 0.0115 max 0.014 max 0.0035 min 0.007 max 0.011 max 0.032 min 0.035 max 0.0002 min 0.0007 max 0.005 max 389-004 4-24 Alpha Industries * * Fax * E-mail * Visit our web site: Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Outline Drawings 389-003 169-001 0.009 min 0.0115 max 0.009 min 0.0115 max 0.014 max 0.0035 min 0.007 max 0.011 max 0.032 min 0.035 max 0.0002 min 0.0007 max 0.005 max 389-004 4-24 Alpha Industries * * Fax * E-mail * Visit our web site: