4–16 Alpha Industries
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Features
Low Capacitance
Low Resistance
Fast Switching
Oxide–Nitride Passivated
Stronger, Full Frame Design
High Voltage
Maximum Ratings
Operating Temperature:
Storage Temperature:
Power Dissipation (Derate
Linearly to Zero @ 175°C):
Typical Lead Strength:
–65 to + 150°C
–65 to + 200°C
250 mW
8 Grams Pull
Description
Alpha’s Silicon Planar and Mesa Beam Lead PIN
diodes are surrounded by a glass frame for superior
strength and electrical performance that surpasses
the standard beam lead PINs. They are designed for
low resistance, low capacitance and fast switching
time. The oxide–nitride passivation layers provide
reliable operation and stable junction parameters that
provide complete sealing of the junction permitting
use in assemblies with some degree of moisture
sealing. A layer of glass provides increased
mechanical strength.
Alpha’s beam lead PIN diodes are ideal for microstrip
or stripline circuits and for circuits requiring high
isolation from a series mounted diode such as broad
band multi–throw switches, phase shifters, limiters,
attenuators and modulators.
Electrical Specifications at 25
°
C
Low Capacitance Planar Beam Lead Diodes
Part
Number
Breakdown
Voltage
@ 10 µA
(V)
Capacitance
Total
@ 50 Volts,
1 MHz
(pF)
Series
Resistance
@ 20 mA
100 MHz
(Ohms)
Minority Carrier
Lifetime
IF = 10mA, IR = 6mA
(ns)
Reverse Recovery
Time
IF = 20 mA,
VR = 10V,
90% Recovery
(ns)
Outline
Drawing
Number
Min. Typ. Typ. Max. Typ. Max. Typ. Typ. Max.
DSG6405–000 100 125 0.017 0.02 4.5 6.0 200 20 35 389–004
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4
4–17
Alpha Industries
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Performance Data for DSG6405–000
Forward Voltage (V)
Forward Current (mA)
100
10
1
0.1
0.01
0.25 0.50 0.75 1.00 1.25
Figure 1. Typical Forward Characteristics
Reverse Voltage (Volts)
Capacitance (pF)
0.08
0.06
0.04
0.02
0
0102030
1 MHz
Above 1 GHz
Figure 2. Typical Capacitance vs. Reverse
Bias Voltage
Forward Bias Current (mA)
RF Resistance (Ohms)
10K
1K
100
10
1
0.1 1 10 100
Figure 3. Typical RF Resistance vs. Forward
Bias Current
Frequency (GHz)
Isolation Loss (dB)
45
0102030
40
35
30
25
20
15
10
5
0
5151825
0.75
0.60
0.45
0.30
0.15
(10 Volts)
(20 mA)
Insertion Loss (dB)
Figure 4. Typical Insertion Loss and Isolation
Characteristics
Electrical Specifications at 25
°
C
Planar Beam Lead Diodes
Part
Number
Voltage
Breakdown
@ 10 mA
Series Resistance
(Ohms) (From
Insertion Loss @
3 GHz, 50 mA)1
Junction
Capacitance
CJ
(pF)
RF
Switching
Time
TS
2
Minority
Carrier
Lifetime
(ns)
Outline
Drawing
Number
Min. Max. Max.
S
(ns)2Typ.
DSG6474–000 200 4.0 0.02 25 250 169–001
Available through distribution.
1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot.
All diodes are characterized for capacitance at –50 Volts, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements.
2. TS measured from RF transition, 90% to 10%, in series configuration.
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4–18 Alpha Industries
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Performance Data for DSG6474–000
Figures 5 and 6 show a single pole double–throw
1–18 GHz switch these diodes are mounted an
Alumina, Duriod, or Teflon fiberglass 50 ohm
microstrip circuits. Typical bonding methods include
thermal compression bonding, parallel gap welding,
and soldering.
SPDT isolation curves are shown in Figure 6 and
insertion loss in Figures 7 and 8. With proper
transitions and bias circuits, VSWR is better than 2.0
to 1 through 18 GHz.
Switching Considerations
The typical minority carrier lifetime of the DSG6474
diodes is 100 ns. With suitable drivers, the individual
diodes can be switched from high impedance (off) to
low RS (on) in about 10 ns.
ÇÇÇÇÇÇÇÇ
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ÇÇÇÇÇÇÇÇ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÇÇ
ÇÇ
ÇÇ
Beam Lead Pin Duriod Substrate 50 Ohm
Connecting
50 Ohm
Transmission
Line
Lead
Glass Bead
Figure 5. Typical SPDT Circuit Arrangement
ÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇ
DuroidMetal Conductor
Preferred Beam
Lead Orientation
Beam Lead Pin 0.005”
Figure 6. Typical Beam Lead Mounting
Frequency (GHz)
Isolation Loss (dB)
0 2 4 6 8 10 12 14 16 18
0
8
12
16
20
24
28
32
36
38
DSG6474–000
Figure 7. Isolation vs. Frequency, SPDT
DSG6474–000
Bias Current (mA)
Insertion Loss (dB)
0 10 50 100
0.5
1.0
1.5
2.0
2.5
0
DSG6474–000
Figure 8. Diode Insertion Loss vs. Bias SPST,
18 GHz DSG6474–000
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4
4–19
Alpha Industries
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Power Handling for DSG6474–000
Beam lead diodes are not suitable for high power
operation because of high internal thermal
impedance of about 600°C/Watt.
Frequency (GHz)
Isolation Loss (dB)
0.2
0.4
0.6
0.8
1.0
0
1.2
02 4 6 8 10 12 14 16 18
1.4
Figure 9. Diode Insertion Loss vs. Frequency
SPST, 50 mA Bias DSG6474–000
With maximum CW power dissipation of 250 mW, the
DSG6474–000 diodes are normally rated at 2 Watt
CW with linear derating between 25°C and 150°C.
Figure 10 presents data on CW power handling as a
function of bias and frequency.
Frequency (GHz)
CW Power (Milliwatts)
50
100
200
500
1000
20
2000
0.1 0.2 0.5 1.0 2.0 5.0 10 20
5000 0.4V 0.1V
10% increase in
small signal
insertion loss
when biased at
50 mA.
10% decrease in
small signal insertion
loss when biased at
–1V/–4V.
Figure 10. Typical Series Switch Behavior at
Room Temperature and Biased at 50ma/1V/4V
DSG6474–000
For pulsed operation, the total RF plus bias voltage
must not exceed the rated breakdown. Alpha has
made high power tests at 1 GHz with 1µs pulses,
0.001 duty, with 200V diodes. With 50 mA forward
bias, there is no increase in insertion loss over the 0
dBm level with a peak power input of 50 watts. In the
open state, reverse bias voltage is required to keep
the diode from “rectifying,” with resultant decrease in
isolation and possible failure. Figure 11 shows
allowed peak power versus reverse bias at 1 GHz.
At this frequency, the required reverse voltage is
almost equal to the peak RF voltage; at high
frequency, the bias can be reduced somewhat.
Experimentation is necessary.
Reverse Bias (Volts)
Peak Power W atts
0 10 50 100
20
40
60
80
100
0
Figure 11. Peak Power Handling, SPST, 1 GHz
DSG6474–000
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4–20 Alpha Industries
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Mesa Beam Lead Diode Specifications
Voltage
Capacitance
Total
Series Resistance (Ohms) CLT
IF=10mA
O tli
Part
Number
@ IR < 10 mA
(V)
Total
50V, 1MHz
(pF) 50 mA,
100 MHz 10 mA,
100 MHz
I
F
=
10
mA
,
IR = 6 mA
(ns)
Outline
Drawing
Number
Max. Max. Max. Typ. Typ.
Fast Beam Lead Pin Diodes
DSM6380–000
DSM6381–000
100
150
0.025
0.025
3.5
4.0
4.5
5.0
40
50
389–003
389–003
Low–Loss Ultra–Fast Beam Lead PIN Diodes
DSM6361–000 60 0.02513.52–– 25 389–003
Available through distribution.
1. Capacitance Total @ 10 Volts, 1 MHz, pF, Max.
2. Series Resistance @ 10 mA, Ohms, Max., 100 MHz.
Part
Number
Voltage
Breakdown @ 10 µA,
Reverse Current Series Resistance
@ 50 MHz, 50 mA Capacitance T otal
@ –10V, 1 MHz Lifetime
(ns)
Switching
Time
(ns) Video
Recovery
Time
Outline
Drawing
Number
Number
Min. Typ. Typ. Max. Typ. Max. Typ.1Typ.2
Time
(ns)2
Number
Ultra Low Resistance High–Speed Beam Lead PIN Diodes
DSM6356–000 30 50 1.2 1.5 0.12 0.15 30 5 2 389–003
1. IF = 10mA, I = 6mA, recovery to 3 mA.
2. Video recovery time at 2 GHz from IF = 10mA to VR = 10V, from 100% to 10% in series configuration. Video reverse recovery time from IF = 10mA to IR = 2mA, with VR = 10mV.
5
10
15
20
0 0.3 1.0 3 10 30 100 300
T ime (ns)
Attenuation (dB)
VR = 40 Volts
Conventional
Beam Lead
Mesa Beam
Chip
Lead
Figure 12. Switching Time Data
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4
4–21
Alpha Industries
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Typical Characteristics for DSM6380–000 and DSM6381–000
Forward Voltage (V)
Forward Current (mA)
100
10
1
0.1
0.01
0246810
0.001
Figure 13. Typical Forward Characteristics of
the DSM6380–000
Reverse Voltage (Volts)
Capacitance (pF)
20
0102030
1 MHz
15
0.05
0.04
0.03
0.02
0.01 Above 1 GHz
Figure 14. Typical Capacitance vs. Reverse
Voltage for DSM6380–000
Frequency (GHz)
Isolation (dB)
45
0102030
40
35
30
25
20
15
10
5
0
5151825
0.75
0.60
0.45
0.30
0.15
(10 Volts)
(10 mA)
Insertion Loss (dB)
DSM6381–000
DSM6380–000
Figure 15. Typical Isolation and Insertion Loss
Characteristics of the DSM6380–000/6381–000
Forward Bias Current (mA)
RF Resistance (Ohms)
100
10
1
1
1 1 10 100
DSM6381–000
DSM6380–000
Figure 16. Typical RF Resistance vs.
Forward Bias Current for DSM6380–000
and DSM6381–000
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4–22 Alpha Industries
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Typical Characteristics for DSM6361–000
Frequency (GHz)
Isolation (dB)
45
0102030
40
35
30
25
20
15
10
5
0
5151825
0.75
0.60
0.45
0.30
0.15
(10 mA)
Insertion Loss (dB)
DSM6361–000
Figure 17. Typical Isolation and Insertion Loss
Characteristics of the DSM6361–000
Reverse Voltage (Volts)
Capacitance (pF)
20
0102030
1 MHz
15
0.05
0.04
0.03
0.02
0.01 Above 1 GHz
0.06
Figure 18. Typical Capacitance vs. Reverse
Voltage for DSM6361–000
Forward Bias Current (mA)
RF Resistance (Ohms)
100
10
1
1
1 1 10 100
DSM6361–000
Figure 19. Typical RF Resistance vs. Forward
Bias Current for DSM6361–000
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4
4–23
Alpha Industries
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Typical Characteristics for DSM6356–000
Forward Voltage (V)
Forward Current (mA)
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0
0.001
DSM6356–000
Figure 20. Typical Forward Characteristics
Forward Bias Current (mA)
RF Resistance (Ohms)
100
10
1
1
1 1 10 100
DSM6356–000
Figure 21. Typical RF Resistance vs. Forward
Bias Current
Above 1 GHz
1 MHz
Reverse Voltage (Volts)
Capacitance (pF)
0.15
0.10
0.07
0102030
0.20
DSM6356–000
Figure 22. Typical Capacitance vs. Reverse
Voltage
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4–24 Alpha Industries
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Outline Drawings
389–003
0.014 max
0.009 min
0.0115 max
0.032 min 0.035 max
0.009 min
0.0115 max
0.011 max
0.0035 min
0.007 max
0.005 max
0.0002 min
0.0007 max
389–004
169–001
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series
4–24 Alpha Industries
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Outline Drawings
389–003
0.014 max
0.009 min
0.0115 max
0.032 min 0.035 max
0.009 min
0.0115 max
0.011 max
0.0035 min
0.007 max
0.005 max
0.0002 min
0.0007 max
389–004
169–001
Planar and Mesa Beam Lead PIN Diodes
DSG6405–000, DSG6474–000, DSM6300 Series