DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
1 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TC = +25°C
30V
4mΩ@VGS = 10V
75A
7mΩ@VGS = 4.5V
75A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
DC-DC Converters
Backlighting
Features
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Weight: 0.315 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMTH3004LK3-13
TO252
2500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
Pin Out Top View
=Manufacturer’s Marking
H3004L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
Top View
Green
YYWW
H3004L
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
2 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
+20
-16
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TC = +25°C
TC = +70°C
ID
75
75
A
Steady
State
TA = +25°C
TA = +70°C
ID
21
17
A
Pulsed Drain Current (380μs Pulse, Duty Cycle=1%)
IDM
160
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
3
A
Avalanche Current (Note 7) L=5mH
IAS
10.7
A
Avalanche Energy (Note 7) L=5mH
EAS
287
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.9
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RJA
80
°C/W
Total Power Dissipation (Note 6)
PD
3
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RJA
50
°C/W
Thermal Resistance, Junction to Case
RJC
1.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
-
-
10
μA
VDS = 24V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
100
-100
nA
VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1
-
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
-
3.3
4
mΩ
VGS = 10V, ID = 20A
-
5.5
7
VGS = 4.5V, ID = 7A
Diode Forward Voltage
VSD
-
0.75
1
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
-
2370
-
pF
VDS =15V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
-
1360
-
pF
Reverse Transfer Capacitance
Crss
-
240
-
pF
Gate Resistance
Rg
-
0.6
-
Ω
VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
-
20
-
nC
VDS = 15V, ID =20A
Total Gate Charge (VGS = 10V)
Qg
-
44
-
nC
Gate-Source Charge
Qgs
-
7
-
nC
Gate-Drain Charge
Qgd
-
8
-
nC
Turn-On Delay Time
tD(ON)
-
6.2
-
ns
VDD = 15V, VGS = 10V,
RL = 0.75Ω, RG = 3Ω, ID =20A
Turn-On Rise Time
tR
-
4.3
-
ns
Turn-Off Delay Time
tD(OFF)
-
21
-
ns
Turn-Off Fall Time
tF
-
8
-
ns
Reverse Recovery Time
tRR
-
25
-
ns
IF =15A, di/dt=500A/μs
Reverse Recovery Charge
QRR
-
37
-
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
3 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.5 1 1.5 2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = 2.2V VGS = 2.5V
VGS = 2.8V
VGS = 10.0V
VGS = 4.5V
VGS = 3.5V
VGS = 4.0V VGS = 3.0V
0.002
0.003
0.004
0.005
0.006
0.007
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS = 4.5V
VGS = 10V
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0 2 4 6 8 10 12 14 16
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID = 20A
0.002
0.003
0.004
0.005
0.006
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
-55℃
25℃
85℃
175℃
125℃
VGS = 10V
150℃
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150 175
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS = 5V
-55℃
25℃
85℃
125℃
150℃
175℃
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
4 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
-50 -25 025 50 75 100 125 150 175
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
0
5
10
15
20
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
TJ= 125oCTJ= 85oC
TJ= 25oC
TJ= -55oC
VGS = 0V
TJ= 150oC
TJ= 175oC
10
100
1000
10000
0 5 10 15 20 25 30
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Crss
Coss
Ciss
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
VGS (V)
Qg(nC)
Figure 11. Gate Charge
VDS = 15V, ID= 20A
0.1
1
10
100
1000
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
PW=10ms
PW=100µs
RDS(ON) Limited
PW=1ms
PW=100ms
TJ(Max) = 175℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
VGS= 10V
PW=1s
PW=10µs PW=1µs
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150 175
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID = 250μA
ID = 1mA
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
5 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.9
D=0.7
RθJC(t) = r(t) * RθJC
RθJC = 1.4℃/W
Duty Cycle, D = t1 / t2
b3
E
L3
D
L4
b2(2x)
b(3x)
e
c
A
7°± 1°
H
Seating Plane
A1
Gauge Plane
a
0.508
L
2.74REF
D1
A2
E1
TO252 (DPAK)
Dim
Min
Max
Typ
A
2.19
2.39
2.29
A1
0.00
0.13
0.08
A2
0.97
1.17
1.07
b
0.64
0.88
0.783
b2
0.76
1.14
0.95
b3
5.21
5.46
5.33
c
0.45
0.58
0.531
D
6.00
6.20
6.10
D1
5.21
-
-
e
-
-
2.286
E
6.45
6.70
6.58
E1
4.32
-
-
H
9.40
10.41
9.91
L
1.40
1.78
1.59
L3
0.88
1.27
1.08
L4
0.64
1.02
0.83
a
0°
10°
-
All Dimensions in mm
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
6 of 6
www.diodes.com
November 2015
© Diodes Incorporated
DMTH3004LK3
NEW PROD UCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2015, Diodes Incorporated
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Dimensions
Value (in mm)
C
4.572
X
1.060
X1
5.632
Y
2.600
Y1
5.700
Y2
10.700
X1
X
Y2
Y1
Y
C
